Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications. • Typical Performance (Broadband Reference Circuit): VDD = 50 Volts, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) Output Signal PAR (dB) IMD Shoulder (dBc) DVB--T (8k OFDM) 18 Avg. 470 21.8 31.0 7.9 --27.8 650 21.6 26.4 8.4 --37.6 860 21.7 27.6 7.1 --30.4 Features • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Input Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Excellent Thermal Stability • Device can be used Single--Ended or in a Push--Pull Configuration • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. Table 1. Maximum Ratings Rating MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 470--860 MHz, 90 W, 50 V BROADBAND RF POWER LDMOS TRANSISTORS CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6VP3091NR1(NR5) CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6VP3091NBR1(NBR5) PARTS ARE PUSH--PULL Gate 1 Drain 1 Gate 2 Drain 2 Symbol Value Unit Drain--Source Voltage VDSS --0.5, +115 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Note: Exposed backside of the package is the source terminal for the transistor. Operating Junction Temperature (1,2) TJ 225 °C Figure 1. Pin Connections (Top View) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 76°C, 18 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz Case Temperature 80°C, 90 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz Symbol RθJC Value (2,3) 0.79 0.82 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011. All rights reserved. MRF6VP3091NR1 RF Device Data Freescale Semiconductor, Inc. MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (2001--4000 V) Machine Model (per EIA/JESD22--A115) B (201--400 V) Charge Device Model (per JESD22--C101) IV (>1000 V) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit IGSS — — 0.5 μAdc V(BR)DSS 115 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 20 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 0.9 1.6 2.4 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 350 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.7 3.5 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 0.25 Adc) VDS(on) — 0.2 — Vdc Reverse Transfer Capacitance (2) (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 41 — pF Output Capacitance (2) (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 65.4 — pF Input Capacitance (2) (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 591 — pF Characteristic Off Characteristics (1) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 50 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Single--Ended Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 350 mA, Pout = 18 W Avg., f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth. Power Gain Gps 21.0 22.0 24.0 dB Drain Efficiency ηD 27.5 28.5 — % ACPR — --62.0 --60.0 dBc IRL — --14 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally input matched. MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 2 RF Device Data Freescale Semiconductor, Inc. VBIAS C1 VSUPPLY + + R1 C2 C8 C3 C9 C10 Z14 Z15 Z16 Z8 Z10 RF INPUT C4 R2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 C5 Z9 DUT Z12 Z13 Z17 Z18 RF OUTPUT C14 C6 C15 C7 C11 C12 C13 Z11 + C16 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.266″ × 0.067″ Microstrip 0.331″ × 0.067″ Microstrip 0.598″ × 0.067″ Microstrip 0.315″ × 0.276″ Microstrip 0.054″ × 0.669″ Microstrip 0.419″ × 0.669″ Microstrip 0.256″ × 0.669″ Microstrip 0.986″ × 0.071″ Microstrip 0.201″ × 0.571″ Microstrip Z10, Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 C17 C18 1.292″ × 0.079″ Microstrip 0.680″ × 0.571″ Microstrip 0.132″ × 0.117″ Microstrip 0.705″ × 0.117″ Microstrip 0.159″ × 0.117″ Microstrip 0.140″ × 0.067″ Microstrip 0.077″ × 0.067″ Microstrip 0.163″ × 0.067″ Microstrip Figure 2. MRF6VP3091NR1(NBR1) 860 MHz Single--Ended Narrowband Test Circuit Schematic Table 6. MRF6VP3091NR1(NBR1) 860 MHz Single--Ended Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kermet C2, C9, C17 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C3, C5, C8, C14, C16 43 pF Chip Capacitors ATC100B430JT500XT ATC C4 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C6 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC C7 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C10, C18 220 μF, 100 V Electrolytic Capacitors EEVFK2A221M Panasonic--ECG C11, C15 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC C12 3.0 pF Chip Capacitor ATC100B3R0CT500XT ATC C13 0.7 pF Chip Capacitor ATC100B0R7BT500XT ATC R1 10 kΩ, 1/4 W Chip Resistor CRCW120610KOJNEA Vishay R2 10 Ω, 1/4 W Chip Resistor CRCW120610ROJNEA Vishay PCB 0.030″, εr = 3.5 RF--35 Taconic MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF Device Data Freescale Semiconductor, Inc. 3 -C1 C10 C8 C2 C3 C4 C5 C6 C7 MRF6V3090N Rev. 0 C11 R2 C15 CUT OUT AREA R1 C9 C16 C14 C12 C13 C17 C18 -- Figure 3. MRF6VP3091NR1(NBR1) 860 MHz Single--Ended Narrowband Test Circuit Component Layout MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 24 Ciss 70 VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz 100 Coss Crss 0 10 21 40 20 30 19 20 ηD 10 50 10 1 100 0 200 Pout, OUTPUT POWER (WATTS) Figure 4. Capacitance versus Drain--Source Voltage Figure 5. CW Power Gain and Drain Efficiency versus Output Power (Single--Ended Narrowband Test Circuit) 25 P3dB = 51.28 dBm (134.3 W) 55 54 Ideal 24 P1dB = 50.7 dBm (117.5 W) Actual 51 50 49 48 --6 --5 --4 --3 --2 --1 0 1 2 3 22 21 20 19 50 V 18 45 V 17 VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz 47 IDQ = 350 mA, f = 860 MHz 23 P2dB = 51.06 dBm (127.6 W) Gps, POWER GAIN (dB) VDD = 40 V 16 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 4 Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) Figure 6. CW Output Power versus Input Power (Single--Ended Narrowband Test Circuit) Figure 7. CW Power Gain versus Output Power (Single--Ended Narrowband Test Circuit) 25 VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz 70 TC = --30_C Gps, POWER GAIN (dB) 24 60 Gps 23 TC = --30_C 85_C 50 25_C 22 40 21 85_C 30 25_C ηD 20 20 10 19 18 1 10 100 ηD, DRAIN EFFICIENCY (%) 52 50 17 40 30 22 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 56 53 20 60 Gps 18 Measured with ±30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 10 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) C, CAPACITANCE (pF) 23 ηD, DRAIN EFFICIENCY (%) 1000 0 200 Pout, OUTPUT POWER (WATTS) Figure 8. CW Power Gain and Drain Efficiency versus Output Power versus Temperature (Single--Ended Narrowband Test Circuit) MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — TWO--TONE (SINGLE--ENDED NARROWBAND TEST CIRCUIT) --20 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) --10 VDD = 50 Vdc, IDQ = 350 mA, f1 = 854 MHz f2 = 860 MHz, Two--Tone Measurements --20 --30 3rd Order --40 5th Order --50 --60 7th Order --70 10 1 100 200 --30 3rd Order --35 --40 5th Order --45 --50 --55 7th Order --60 --65 1 90 10 Pout, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Output Power Figure 10. Intermodulation Distortion Products versus Two--Tone Spacing 23.5 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) --10 23 Gps, POWER GAIN (dB) VDD = 50 Vdc, Pout = 90 W (PEP), IDQ = 350 mA f = 860 MHz, Two--Tone Measurements --25 IDQ = 450 mA 22.5 22 350 mA 21.5 300 mA 21 250 mA VDD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz Two--Tone Measurements, 6 MHz Tone Spacing 20.5 VDD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz Two--Tone Measurements, 6 MHz Tone Spacing --20 --30 IDQ = 250 mA --40 300 mA --50 1 10 100 200 1 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 11. Two--Tone Power Gain versus Output Power 450 mA 350 mA --60 20 Figure 12. Third Order Intermodulation Distortion versus Output Power MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — DVB--T (8k OFDM) 100 --20 7.61 MHz --30 10 --50 DVB--T (8k OFDM) 64 QAM Data Carrier Modulation 5 Symbols 0.01 --90 --110 2 0 4 6 8 10 12 --2 --1 0 1 2 3 4 Figure 14. DVB--T (8k OFDM) Spectrum 300 mA 250 mA VDD = 50 Vdc, f = 860 MHz DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols 10 40 --54 VDD = 50 Vdc, f = 860 MHz DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols --56 --58 --60 IDQ = 250 mA --62 300 mA --64 350 mA --66 450 mA --68 10 1 Pout, OUTPUT POWER (WATTS) AVG. Gps, POWER GAIN (dB) ηD, DRAIN EFFICIENCY (%) Figure 16. Single--Carrier DVB--T (8k OFDM) ACPR versus Output Power (Single--Ended Narrowband Test Circuit) 50 --30_C VDD = 50 Vdc, IDQ = 350 mA f = 860 MHz, DVB--T (8k OFDM) 64 QAM Data Carrier Modulation 5 Symbols 20 --45 --50 ηD 25_C 30 --55 85_C Gps 85_C --60 TC = --30_C 25_C ACPR --65 10 0 --70 1 40 Pout, OUTPUT POWER (WATTS) AVG. Figure 15. Single--Carrier DVB--T (8k OFDM) Power Gain versus Output Power (Single--Ended Narrowband Test Circuit) 40 5 10 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 1 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Gps, POWER GAIN (dB) --3 Figure 13. Single--Carrier DVB--T (8k OFDM) 350 mA 20.5 --4 f, FREQUENCY (MHz) 22.5 21 --5 PEAK--TO--AVERAGE (dB) IDQ = 450 mA 21.5 DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols --100 23 22 4 kHz BW ACPR Measured at 4 MHz Offset from Center Frequency --70 --80 0.001 0.0001 4 kHz BW --60 0.1 (dB) PROBABILITY (%) --40 1 40 Pout, OUTPUT POWER (WATTS) AVG. Figure 17. Single--Carrier DVB--T (8k OFDM) Drain Efficiency, Power Gain and ACPR versus Output Power versus Temperature (Single--Ended Narrowband Test Circuit) MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF Device Data Freescale Semiconductor, Inc. 7 TYPICAL CHARACTERISTICS 109 VDD = 50 Vdc Pout = 18 W Avg. ηD = 28.5% MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 18. MTTF versus Junction Temperature -- CW VDD = 50 Vdc, IDQ = 350 mA, Pout = 18 W Average f MHz Zsource Ω Zload Ω 860 1.58 -- j0.89 3.51 -- j3.98 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 19. Series Equivalent Source and Load Impedance (Single--Ended Narrowband Test Circuit) MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 8 RF Device Data Freescale Semiconductor, Inc. 470--860 MHz BROADBAND REFERENCE CIRCUIT VDD = 50 Volts, IDQ = 450 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) Output Signal PAR (dB) IMD Shoulder (dBc) DVB--T (8k OFDM) 4.5 Avg. 470 21.7 12.6 10.1 --40.1 650 21.5 11.2 10.1 --43.1 860 21.9 11.6 9.8 --46.0 470 21.8 20.3 9.9 --35.9 650 21.6 17.5 9.9 --40.9 860 21.9 18.5 9.1 --41.7 470 21.8 31.0 7.9 --27.8 650 21.6 26.4 8.4 --37.6 860 21.7 27.6 7.1 --30.4 9 Avg. 18 Avg. VGG VDD C11 C13 R1 C21 C19 C23 C1 C3 C10 R3 C7 C2 R2 VGG C14 C12 C8 C5 R4 C4 Q1 C20 MRF6VP3091N Rev. 1 C9 C24 C22 VDD Note: Component numbers C6, C15, C16, C17 and C18 are not used. Figure 20. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Layout Figure 21. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Layout — Bottom MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF Device Data Freescale Semiconductor, Inc. 9 0.430 0.642 0.831 A 2.800 1.160 B 1.359 C D 1.570 E 0.490 1.965 1.875 2.000 1.635 0.420 C 1.000 1.171 1.405 1.500 D Side View, Typ both ends 0.595 A 0.324 0.000 0.129 3.475 3.600 R0.370 0.500 3.380 2.640 1.980 2.105 1.800 1.495 1.620 0.800 0.000 0.125 E 0.125 0.0000 Diamond Saw (0.015″) 2X 0.0050 0.000 A A 0.250 E 0.490 E 0.270 Drill from bottom Dia. = 0.257″ T0--272 0.490″ Copper Heatsink (for 30 mil 1 oz/1 oz PCB) Designators Details A 2 places, mill down cavity 0.250″ B 2 places, on sides, 0.1875 diameter notch 0.020″ deep (N connector notch) C 4 places, side, drill & tap #2--56 screw 0.500″ deep (SMA holes) D 4 places, side, drill & tap #4--40 screw 0.500″ deep (N conn holes) E 2 places drill diameter = 0.257″, from bottom depth = 0.270″ All others, drill through & tap for #4--40 screw Figure 22. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Layout — Heatsink MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 10 RF Device Data Freescale Semiconductor, Inc. Table 7. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C3, C4, C7, C8, C10 51 pF Chip Capacitors ATC100B510GT500XT ATC C2 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC C5 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C9 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C11, C12 47 μF, 16 V Tantalum Capacitors T491D476K016AT Kemet C13, C14, C19, C20 200 pF Chip Capacitors ATC100B201JT300XT ATC C21, C22 2.2 μF, 100 V Chip Capacitors C3225X7R2A225KT TDK C23, C24 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp Q1 RF High Power Transistor MRF6VP3091NBR1 Freescale R1, R2 10 Ω Chip Resistors CRCW120610R0JNEA Vishay R3, R4 56 Ω Chip Resistors CRCW120656R0FKEA Vishay PCB 0.030″, εr = 3.5 RO4350B Rogers MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF Device Data Freescale Semiconductor, Inc. 11 TYPICAL CHARACTERISTICS — 470--860 MHz BROADBAND REFERENCE CIRCUIT 26 70 VDD = 50 Vdc, IDQ = 450 mA, DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols 60 Pout = 4.5 W 9 W 50 22 Gps 18 W 40 20 18 W 30 ηD 18 9 W 20 16 14 450 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 24 4.5 W 500 550 600 650 700 750 800 10 900 850 f, FREQUENCY (MHz) Figure 23. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain Efficiency versus Frequency (Broadband Reference Circuit) 10 OUTPUT PAR (dB) 10 VDD = 50 Vdc, IDQ = 450 mA, DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols Pout = 4.5 W 9W 8 PAR 18 W 6 IMD(1) 4 18 W 0 --10 --20 --30 9 W --40 2 IMD, INTERMODULATION DISTORTION SHOULDER (dBc) 12 4.5 W 0 450 500 550 600 650 700 750 800 850 --50 900 f, FREQUENCY (MHz) (1) Intermodulation distortion shoulder measurement made using delta marker at 4.2 MHz offset from center frequency. Figure 24. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD Shoulder versus Frequency (Broadband Reference Circuit) 24 Gps, POWER GAIN (dB) 80 VDD = 50 Vdc, IDQ = 450 mA Pulse Width = 100 μsec, 10% Duty Cycle 70 470 MHz Gps 22 600 MHz 60 750 MHz 20 750 MHz 18 860 MHz ηD 16 14 0 860 MHz 20 40 60 80 100 600 MHz 470 MHz 50 40 30 120 140 ηD, DRAIN EFFICIENCY (%) 26 20 160 Pout, OUTPUT POWER (WATTS) PULSED Figure 25. Pulsed Power Gain and Drain Efficiency versus Output Power (Broadband Reference Circuit) MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF Device Data Freescale Semiconductor, Inc. 13 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 14 RF Device Data Freescale Semiconductor, Inc. MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF Device Data Freescale Semiconductor, Inc. 15 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 16 RF Device Data Freescale Semiconductor, Inc. MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF Device Data Freescale Semiconductor, Inc. 17 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 18 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2011 • Initial Release of Data Sheet 1 Dec. 2011 • Added R5 part numbers MRF6VP3091NR5 and MRF6VP3091NBR5, p. 1 • Fig. 7, CW Power Gain versus Output Power (Single--Ended Narrowband Test Circuit): adjusted x--axis scale from 0 to 140 watts to 10 to 150 watts, p. 5 • Fig. 10, Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph callouts, p. 6 • Added Fig. 21, 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Layout -470--860 MHz -- Bottom, p. 10 • Added Fig. 22, 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Layout -470--860 MHz -- Heatsink, p. 10 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF Device Data Freescale Semiconductor, Inc. 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 Document Number: MRF6VP3091N Rev. 1, 12/2011 20 RF Device Data Freescale Semiconductor, Inc.