DSEC 30-06B HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 600 V trr = 25 ns with common cathode and soft recovery VRSM VRRM V V 600 600 Type A C A TO-247 AD A C A DSEC 30-06B C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions IFRMS IFAVM TC = 135°C; rectangular, d = 0.5 IFSM EAS IAR Maximum Ratings 50 15 A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A TVJ = 25°C; non-repetitive; IAS = 1 A; L = 100 µH L = 20 mH 0.1 20 mJ mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C 95 W TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR ① VF ② 0.8...1.2 6 Nm g Characteristic Values typ. max. TVJ = 25°C; VR = VRRM TVJ = 150°C;VR = VRRM 100 0.5 µA mA IF = 15 A; 1.54 2.51 V V 1.6 K/W K/W 30 ns 2.6 A TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 t rr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C 25 Features • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Data according to IEC 60747 and per diode unless otherwise specified. 1-2 DSEC 30-06B 50 300 A TVJ = 150°C IF IF = 15 A 8 IRM Qr IF = 7.5 A IF = 30 A 200 30 6 IF = 15 A TVJ = 100°C IF = 30 A A VR = 300 V 250 40 10 TVJ = 100°C nC IF = 7.5 A 150 20 4 TVJ = 100°C 100 VR = 300 V TVJ = 25°C 10 2 50 0 0 1 2 3 VF 4 V Fig. 1 Forward current IF versus VF 0 100 Fig. 2 Reverse recovery charge Qr versus -diF/dt 120 2.0 0 200 400 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 60 TVJ = 100°C VR = 300 V ns trr 100 1.5 Kf 0 A/µs 1000 -diF/dt 0.30 V µs 50 0.25 tfr VFR 40 0.20 IF = 30 A 80 IF = 15 A 1.0 IRM TVJ = 100°C 30 60 20 tfr VFR 0.5 10 Qr 0.05 0 40 0.10 40 0.0 0 0.15 IF = 15 A IF = 7.5 A 80 120 C 160 0 TVJ 200 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.00 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.908 0.35 0.342 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEC 30-06B 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 t IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Fig. 7 Transient thermal resistance junction to case 2-2