DC COMPONENTS CO., LTD. DXTD965 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in AF output amplifier and flash unit. SOT-89 Pinning 1 = Base 2 = Collector 3 = Emitter .063(1.60) .055(1.40) .066(1.70) .059(1.50) Absolute Maximum Ratings(TA=25oC) Characteristic .102(2.60) .095(2.40) .167(4.25) .159(4.05) Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 7 V 1 .020(0.51) .014(0.36) 2 .060(1.52) .058(1.48) Collector Current (continuous) IC 5 A .120(3.04) .117(2.96) Collector Current (peak PT=10mS) IC 8 A Total Power Dissipation PD 1.2 W .181(4.60) .173(4.40) Junction Temperature TJ +150 o -55 to +150 o Storage Temperature TSTG 3 .016(0.41) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 40 - - V Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 7 - - V IE=10µA ICBO - - 0.1 µA VCB=10V Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width IEBO - - 0.1 µA VEB=7V VCE(sat) - 0.35 1 V IC=3A, IB=0.1A hFE1 340 - 800 - IC=0.5A, VCE=2V hFE2 150 - - - IC=2A, VCE=2V fT - 150 - MHz IE=50mA, VCE=6V - - 50 pF VCB=20V, f=1MHz Cob 380µs, Duty Cycle 2% Classification of hFE1 Rank R S Range 340~600 560~800 Test Conditions IC=100µA