DCCOM DXTD965

DC COMPONENTS CO., LTD.
DXTD965
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AF output amplifier and flash unit.
SOT-89
Pinning
1 = Base
2 = Collector
3 = Emitter
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
Absolute Maximum Ratings(TA=25oC)
Characteristic
.102(2.60)
.095(2.40)
.167(4.25)
.159(4.05)
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
7
V
1
.020(0.51)
.014(0.36)
2
.060(1.52)
.058(1.48)
Collector Current (continuous)
IC
5
A
.120(3.04)
.117(2.96)
Collector Current (peak PT=10mS)
IC
8
A
Total Power Dissipation
PD
1.2
W
.181(4.60)
.173(4.40)
Junction Temperature
TJ
+150
o
-55 to +150
o
Storage Temperature
TSTG
3
.016(0.41)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
40
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
20
-
-
V
IC=1mA
Emitter-Base Breakdown Volatge
BVEBO
7
-
-
V
IE=10µA
ICBO
-
-
0.1
µA
VCB=10V
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
DC Current Gain(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
IEBO
-
-
0.1
µA
VEB=7V
VCE(sat)
-
0.35
1
V
IC=3A, IB=0.1A
hFE1
340
-
800
-
IC=0.5A, VCE=2V
hFE2
150
-
-
-
IC=2A, VCE=2V
fT
-
150
-
MHz
IE=50mA, VCE=6V
-
-
50
pF
VCB=20V, f=1MHz
Cob
380µs, Duty Cycle 2%
Classification of hFE1
Rank
R
S
Range
340~600
560~800
Test Conditions
IC=100µA