EIA1415-5 14.40-15.35GHz 5-Watt Internally Matched Power FET UPDATED 11/17/2006 FEATURES • • • • • • • 14.40– 15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH SN .004 IDSS Saturated Drain Current VP Pinch-off Voltage PAE ALL DIMENSIONS IN INCHES MIN TYP 35.5 36.5 dBm 6.0 7.0 dB MAX UNITS ±0.6 dB 33 % 1700 2000 mA VDS = 3 V, VGS = 0 V 2880 3600 mA VDS = 3 V, IDS = 29 mA -1.0 -2.5 2 Thermal Resistance RTH .070 ±.008 Caution! ESD sensitive device. 1 Id1dB ∆G .045 .094 .382 PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f =14.40-5.35GHz VDS = 8 V, IDSQ ≈ 1400mA Gain at 1dB Compression f =14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1400mA Gain Flatness f =14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1400mA Power Added Efficiency at 1dB Compression f =14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1400mA Drain Current at 1dB Compression f =14.40-15.35GHz G1dB .319 DRAIN .022 YYWW ELECTRICAL CHARACTERISTICS (Ta = 25°C) P1dB .060 MIN. EIA1415-5 GATE .129 SYMBOL Excelics .060 MIN. .650±.008 .512 5.5 6.0 V o C/W Note: 1) Tested with 100 Ohm gate resistor. 2) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS VDS VGS Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 10 -5 43.2mA -7.2mA 35.5dBm 175 oC -65 to +175 oC 25W 8V -3V 14.4mA -2.4mA @ 3dB Compression 175 oC -65 to +175 oC 25W Note: 1) Exceeding any of the above ratings may result in permanent damage. 2) Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EIA1415-5 UPDATED 11/17/2006 14.40-15.35GHz 5-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006