Single N-channel MOSFET ELM13404CA-S ■General description ■Features ELM13404CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=5.8A (Vgs=10V) Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 43mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Symbol Limit Unit Vds Vgs 30 ±20 5.8 V V Id Ta=70°C Pulsed drain current 4.9 20 Idm Ta=25°C Power dissipation 1.4 Pd Ta=70°C Junction and storage temperature range Tj, Tstg Note A 1 A 2 W 1.0 -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 65 85 43 90 125 60 °C/W °C/W °C/W 1 2 1 3 ■Circuit D SOT-23(TOP VIEW) 3 Note Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 4- 1 Single N-channel MOSFET ELM13404CA-S ■Electrical characteristics Parameter Symbol Condition Min. Typ. Ta=25°C Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=30V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current Pulsed body-diode current 2 30 1 Tj=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Rds(on) Gfs Vsd Vgs=10V, Id=5.8A V 5 1.0 20 Tj=125°C Vgs=4.5V, Id=5A Vds=5V, Id=5.8A Is=1A 10.0 μA 100 nA 1.9 3.0 V A 22.5 31.3 28.0 38.0 34.5 14.5 0.76 43.0 mΩ 1.00 mΩ S V 2.5 20.0 A A 680 102 77 820 108 pF pF pF 3.0 3.6 Ω 13.88 17.00 nC 6.78 1.80 8.10 nC nC Is Is DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Vgs=0V, Vds=15V, f=1MHz Rg Vgs=0V, Vds=0V, f=1MHz Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Qg Total gate charge (4.5V) Gate-source charge Qg Qgs Vgs=10V, Vds=15V, Id=5.8A 1.5 Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) tr Vgs=10V, Vds=15V 3.12 4.6 3.8 6.5 5.7 nC ns ns Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge td(off) Rl=2.7Ω, Rgen=3Ω tf trr If=5.8A, dl/dt=100A/μs Qrr If=5.8A, dl/dt=100A/μs 20.9 5.0 16.1 7.4 30.0 7.5 21.0 10.0 ns ns ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4- 2 Single N-channel MOSFET AO3404 ELM13404CA-S TYPICAL ELECTRICAL ■Typical electricalAND andTHERMAL thermal CHARACTERISTIC characteristics S 10V 25 20 6V 5V 4.5V Id (A) 20 15 3.5V 10 12 8 125°C 4 Vgs=3V 5 Vds=5V 16 4V Id (A) 30 25°C 0 0 0 1 2 3 4 0 5 0.5 60 2 2.5 3 3.5 4 4.5 Normalized On-Resistance 1.6 50 Rds(on) (m� ) 1.5 Vgs (Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics Vgs=4.5V 40 30 20 Vgs=10V 10 0 5 10 15 1.5 Vgs=10V Id=5A 1.4 Vgs=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 60 1.0E+00 Id=5A 50 40 Is Amps Rds(on) (m� ) 1 125°C 1.0E-01 1.0E-02 30 1.0E-03 20 1.0E-04 25°C 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125°C 25°C 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body diode characteristics 4- 3 Alpha & Omega Semiconductor, Ltd. www.aosmd.co Single N-channel MOSFET AO3404 ELM13404CA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 f=1MHz Vgs=0V 900 800 Capacitance (pF) 8 Vgs (Volts) 1000 Vds=15V Id=5.8A 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 0 2 4 6 8 10 12 Crss 0 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 10ms 1s DC 10 100 Vds (Volts) 10 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Z�ja Normalized Transient Thermal Resistance 30 20 0 0.001 0.1 1 25 10 10s 0.1 20 Tj(max)=150°C Ta=25°C 30 100�s 10�s 0.1s 1 15 40 Power W Id (Amps) 1ms 10 10 Vds (Volts) Figure 8: Capacitance Characteristics Tj(max)=150°C Ta=25°C Rds(on) limited 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse 0.01 0.00001 0.0001 T 1 10 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 Alpha & Omega Semiconductor, Ltd. 0.01 4- 4 100 1000 www.aosmd.com