FDD86110 N-Channel PowerTrench® MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A 100% UIL tested RoHS Compliant Application DC - DC Conversion D D G G S D -P-2A52 K TO (T O -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 50 80 (Note 1a) 12.5 (Note 3) 135 -Pulsed A 60 Single Pulse Avalanche Energy EAS Ratings 100 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 127 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 0.98 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD86110 Device FDD86110 ©2011 Fairchild Semiconductor Corporation FDD86110 Rev.C Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDD86110 N-Channel PowerTrench® MOSFET October 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 72 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 2.8 -10 mV/°C VGS = 10 V, ID = 12.5 A 8.5 VGS = 6 V, ID = 9.8 A 11.3 16 VGS = 10 V, ID = 12.5 A,TJ = 125°C 15 18 VDS = 10 V, ID = 12.5 A 38 10.2 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1MHz 1702 2265 pF 379 505 pF 17 30 pF Ω 0.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 12.5 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VDD = 50 V, ID = 12.5 A 12 20 5.4 10 ns ns 19 35 ns 3.9 10 ns 25 35 nC 7.1 nC 5.2 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 12.5 A (Note 2) 0.80 1.3 VGS = 0 V, IS = 2.6 A (Note 2) 0.72 1.2 IF = 12.5 A, di/dt = 100 A/μs V 52 83 ns 60 96 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 30 A, VDD = 90 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDD86110 Rev.C 2 www.fairchildsemi.com FDD86110 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 ID, DRAIN CURRENT (A) VGS = 6 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 VGS = 5.5 V 45 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 10 V 30 VGS = 5 V 15 VGS = 4.5 V 0 0 1 2 3 4 5 VGS = 4.5 V 4 VGS = 5 V 3 VGS = 5.5 V 2 VGS = 6 V 1 0 0 15 30 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 50 ID = 12.5 A VGS = 10 V ID = 12.5 A 30 TJ = 125 oC 20 10 TJ = 25 oC 0 4 100 125 150 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) 60 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 45 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 45 VDS = 5 V 30 TJ = 150 oC TJ = 25 oC 15 TJ = -55 oC 0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2 3 4 5 6 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.001 0.0 7 TJ = -55 oC 0.01 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDD86110 Rev.C 3 1.2 www.fairchildsemi.com FDD86110 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 12.5 A VDD = 50 V 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 4 Ciss 1000 Coss 100 2 0 f = 1 MHz VGS = 0 V 0 5 10 15 20 25 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 100 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 60 VGS = 10 V 40 Limited by Package VGS = 6 V 20 o RθJC = 0.98 C/W 1 0.001 0.1 1 10 0 25 100 50 125 150 Figure 10. Maximum Continous Drain Current vs. Case Temperature 80 P(PK), PEAK TRANSIENT POWER (W) 10000 100 μs 10 THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 0.5 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) IAS, AVALANCHE CURRENT (A) Crss 10 0.1 1 ms RθJC = 0.98 oC/W 10 ms DC TC = 25 oC 1 10 100 400 TC = 25 oC 1000 100 50 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDD86110 Rev.C SINGLE PULSE RθJC = 0.98 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD86110 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC RθJC = 0.98 C/W 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDD86110 Rev.C 5 www.fairchildsemi.com FDD86110 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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