FDFS2P753AZ tm ® Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchild’s PowerTrench MOSFET with a Schottky diode in an SO-8 package. The MOSFET features a low on-state resistance and an optimized gate charge to achieve fast switching. The independently connected Schottky diode has a low forward voltage drop to minimize power loss. This device is an Ideal DC-DC solution for up to 3A peak load current. Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A VF < 0.45V @ 2A VF < 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Applications Electrically independent Schottky and MOSFET pinout for design flexibility DC - DC Conversion RoHS Compliant D D C D 5 4 G D 6 3 S C 7 2 A C 8 1 A C G S A A Pin 1 SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage ID Drain Current -Continuous (Note 1a) -Pulsed PD Ratings -30 Units V ±25 V -3 -16 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 3.1 (Note 1a) (Note 2) 1.6 6 A W EAS Single Pulse Avalanche Energy VRRM Schottky Repetitive Peak Reverse Voltage 30 mJ V IO Schottky Average Forward Current 2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 40 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking FDFS2P753AZ Device FDFS2P753AZ ©2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C Package SO-8 1 Reel Size 330mm Tape Width 12mm Quantity 2500units www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench® MOSFET and Schottky Diode April 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient -30 ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V -21 VDS = -24V, mV/°C -1 VGS = 0V TJ = 125°C -100 VGS = ±25V, VDS = 0V µA ±10 µA -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance -1.0 -2.1 5 mV/°C VGS = -10V, ID = -3.0A 69 115 VGS = -4.5V, ID = -1.5A 115 180 VGS = -10V, ID = -3.0A, TJ = 125°C 97 162 VDD = -5V, ID = -3.0A 6 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 330 455 pF 60 110 pF 55 100 pF Ω 18 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to -10V Qg Total Gate Charge VGS = 0V to -4.5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15V, ID = -3.0A, VGS = -10V, RGEN = 6Ω VDD = -15V, ID = -3.0A 6 12 ns 4 10 ns 19 34 ns 15 27 ns 7.9 11.0 nC 4.1 5.7 nC 1.3 nC 2.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -2.0A (Note 3) IF = -3.0A, di/dt = 100A/µs -0.9 -1.2 V 20 30 ns 14 21 nC 39 250 µA Schottky Diode Characteristics VR IR Reverse Breakdown Voltage Reverse Leakage IR = 1mA VR = 10V IF = 100mA VF Forward Voltage IF = 2A ©2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 2 30 TJ = 25°C V TJ = 125°C 18 TJ = 25°C 225 TJ = 125°C 140 TJ = 25°C 364 TJ = 125°C 290 mA 280 450 mV www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted a. 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper. b. 135°C/W when mounted on a minimum pad of 2 oz copper. 2. Starting TJ = 25°C, L = 3 mH, IAS = -2A, VDD = -27V, VGS = -10V. 3. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 3 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench® MOSFET and Schottky Diode NOTES: 1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 16 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = -10V VGS = -5V 12 VGS = -4.5V 8 VGS = - 4V VGS = -3.5V 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 4 2.5 VGS = -4V 2.0 VGS = -5V 1.5 VGS = -4.5XV 1.0 VGS = -10V 0.5 5 0 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 16 400 ID = -3A VGS = -10V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 -50 250 200 TJ = 150oC 150 100 -IS, REVERSE DRAIN CURRENT (A) 8 TJ = 25oC 4 TJ = 150oC TJ = -55oC 2 3 4 5 2 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage VDD = -5V 1 TJ = 25oC -VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 ID = -1.5A 300 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 16 12 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 350 50 Figure 3. Normalized On- Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) 8 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -3.5V 20 10 VGS = 0V 1 0.01 TJ = -55oC 0.001 0.2 6 TJ = 25oC TJ = 150oC 0.1 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 4 1.2 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 1000 ID = -3A 8 Ciss VDD = -10V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -20V 6 VDD = -15V 4 Coss 100 2 30 0.1 0 0 2 4 6 8 10 1 Figure 7. Gate Charge Characteristics -4 10 -Ig, GATE LEAKAGE CURRENT(A) -IAS, AVALANCHE CURRENT(A) 30 Figure 8. Capacitance vs Drain to Source Voltage 5 4 3 TJ = 25oC 2 TJ = 125oC -5 10 TJ = 125oC -6 10 -7 10 TJ = 25oC -8 1 0.01 10 0.1 1 2 0 tAV, TIME IN AVALANCHE(ms) 5 10 15 20 25 30 -VGS, GATE TO SOURCE VOLTAGE(V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Volatge 3.0 20 10 -ID, DRAIN CURRENT (A) 2.5 VGS = -10V 2.0 1.5 VGS = -4.5V 1.0 1ms THIS AREA IS LIMITED BY rDS(on) 0.1 o RθJA = 78 C/W 50 10ms 1 0.5 0.0 25 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) -ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V 100ms 1s SINGLE PULSE TJ = MAX RATED 10s RθJA = 135oC/W DC TA = 25oC 75 100 125 0.01 0.1 150 o TA, AMBIENT TEMPERATURE ( C) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature ©2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 1 10 80 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area 5 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted IR, REVERSE LEAKAGE CURRENT (mA) IF, FORWARD CURRENT(A) 100 10 TJ = 125oC 1 0.1 TJ = 25oC 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 100 TJ = 125oC 10 1 0.1 TJ = 25oC 0.01 0 1.2 5 VF, FORWARD VOLTAGE(V) Figure 13. Schottky Diode Forward Voltage P(PK), PEAK TRANSIENT POWER (W) 50 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 14. Schottky Diode Reverse Current VGS = -10V 10 SINGLE PULSE o RθJA = 135 C/W o TA = 25 C 1 0.5 -3 10 -2 -1 10 0 10 10 1 2 10 3 10 10 t, PULSE WIDTH (s) Figure 15. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 135 C/W 0.01 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 16. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 6 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 ©2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS