July 2012 FDS6680A Single N-Channel, Logic Level, PowerTrench® MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 12.5 A, 30 V These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V • Ultra-low gate charge low RDS(ON) • High power and current handling capability D D DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol VDSS Gate-Source Voltage Drain Current – Continuous Power Dissipation for Single Operation 7 2 8 1 Ratings Units 30 V 12.5 A 50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG 3 ±20 (Note 1a) – Pulsed PD 6 o Parameter ID 4 TA=25 C unless otherwise noted Drain-Source Voltage VGSS 5 Operating and Storage Junction Temperature Range W 1.0 –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Case (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680A FDS6680A 13’’ 12mm 2500 units ©2012 Fairchild Semiconductor Corporation FDS6680A Rev F2(W) FDS6680A November 2004 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 24 V, ID = 250 µA 30 ID = 250 µA, Referenced to 25°C V 25 VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=55°C IGSS VGS = ±20 V, Gate–Body Leakage On Characteristics VDS = 0 V mV/°C 1 µA 10 µA ±100 nA (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C 1 2 –4.9 3 7.8 9.9 11.0 9.5 13 15 V VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, ID = 12.5 A 64 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1620 pF 380 pF 160 pF Ω VGS = 10 V, ID = 12.5 A ID = 10.5 A VGS = 4.5 V, VGS = 10 V, ID = 12.5 A, TJ=125°C mV/°C 25 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VGS = 15 mV, f = 1.0 MHz 1.3 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 10 19 ns ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time 5 10 td(off) Turn–Off Delay Time 27 43 ns tf Turn–Off Fall Time 15 27 ns 16 23 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 5 V ID = 12.5 A, nC 5 nC 5.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS trr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward (Note 2) VGS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 12.5 A, diF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge VSD 0.73 2.1 A 1.2 V 28 ns 18 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when 2 mounted on a 1in pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6680A Rev F2(W) FDS6680A Electrical Characteristics FDS6680A Typical Characteristics 50 2.2 VGS = 10V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 4.0V 4.5V 3.5V 30 20 10 3.0V 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 2 0 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.03 ID = 12.5A VGS = 10V ID = 6.2A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V 1.8 0.8 0 1.4 1.2 1 0.8 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 2 150 Figure 3. On-Resist ance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 2 40 30 TA = 125oC o -55 C 20 10 25oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6680A Rev F2(W) FDS6680A Typical Characteristics 2400 f = 1 MHz VGS = 0 V ID = 12.5A 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 20V 4 1800 Ciss 1200 Coss 600 2 Crss 0 0 0 5 10 15 20 25 30 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100µs ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance Characteristics. 100 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 125oC/W 40 TA = 25oC 30 20 10 0 0.001 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6680A Rev F2(W) FDS6680A TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise® F-PFS™ PowerTrench® 2Cool™ ® PowerXS™ FRFET® AccuPower™ Programmable Active Droop™ Global Power ResourceSM AX-CAP™* QFET® Green Bridge™ BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Green FPS™ e-Series™ Quiet Series™ TinyCalc™ CorePOWER™ Gmax™ RapidConfigure™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ ®* OPTOPLANAR® FETBench™ XS™ FlashWriter® * ® FPS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDS6680A Rev.F2 www.fairchildsemi.com