FAIRCHILD FGH40N60UFTU

FGH40N60UF
600 V, 40 A Field Stop IGBT
Features
General Description
• High Current Capability
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
TL
V
80
A
A
@ TC = 25 C
@ TC = 25oC
290
W
Maximum Power Dissipation
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
 20
A
o
Storage Temperature Range
V
40
Maximum Power Dissipation
Tstg
Unit
600
120
o
Pulsed Collector Current
@ TC = 100 C
116
Operating Junction Temperature
TJ
Ratings
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.43
o
C/W
RJA
Thermal Resistance, Junction to Ambient
-
40
o
C/W
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. C1
1
www.fairchildsemi.com
FGH40N60UF — 600 V, 40 A Field Stop IGBT
November 2013
Part Number
Top Mark
FGH40N60UFTU
FGH40N60UF
Package Packing Method
TO-247
Parameter
Tape Width
Quantity
N/A
N/A
30
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
4.0
5.0
6.5
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250 A, VCE = VGE
IC = 40 A, VGE = 15 V
-
1.8
2.4
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
TC = 125oC
-
2.0
-
V
-
2110
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
200
-
pF
-
60
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
24
-
ns
tr
Rise Time
-
44
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
-
112
-
ns
-
30
60
ns
-
1.19
-
mJ
-
0.46
-
mJ
Ets
Total Switching Loss
-
1.65
-
mJ
td(on)
Turn-On Delay Time
-
24
-
ns
tr
Rise Time
-
45
-
ns
td(off)
Turn-Off Delay Time
-
120
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
0.69
-
mJ
Ets
Total Switching Loss
-
1.89
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. C1
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 400 V, IC = 40 A,
VGE = 15 V
2
-
40
-
ns
-
1.2
-
mJ
-
120
-
nC
-
14
-
nC
-
58
-
nC
www.fairchildsemi.com
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
20V
15V
TC = 125 C
12V
15V
20V
100
Collector Current, IC [A]
100
Collector Current, IC [A]
o
o
TC = 25 C
80
60
10V
40
12V
80
60
10V
40
20
20
VGE = 8V
VGE = 8V
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
6.0
Figure 4. Transfer Characteristics
120
120
Common Emitter
VGE = 15V
100
o
TC = 125 C
80
Common Emitter
VCE = 20V
100
o
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
60
40
20
o
TC = 25 C
o
TC = 125 C
80
60
40
20
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
0
4
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
6
7
8
9
10
11
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
Common Emitter
VGE = 15V
3.0
20
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
3.5
80A
2.5
40A
2.0
IC = 20A
1.5
1.0
25
50
75
100
o
Case Temperature, TC [ C]
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. C1
o
TC = - 40 C
16
12
8
3
40A
4
80A
IC = 20A
0
125
Common Emitter
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
80A
40A
4
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 125 C
16
12
8
40A
IC = 20A
0
20
4
Figure 9. Capacitance Characteristics
20
15
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Ciss
o
Gate-Emitter Voltage, VGE [V]
4000
Capacitance [pF]
8
12
16
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
5000
o
TC = 25 C
3000
Coss
2000
1000
Crss
0
0.1
TC = 25 C
12
Vcc = 100V
200V
300V
9
6
3
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
50
100
Gate Charge, Qg [nC]
150
Figure 12. Turn-on Characteristics vs.
Gate Resistance
400
200
100
10s
100
Switching Time [ns]
Collector Current, Ic [A]
80A
4
100s
10
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
o
TC = 125 C
10
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. C1
0
1000
4
10
20
30
40
Gate Resistance, RG []
50
www.fairchildsemi.com
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
5500
500
Common Emitter
VGE = 15V, RG = 10
o
TC = 25 C
o
o
TC = 25 C
1000
Switching Time [ns]
Switching Time [ns]
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 125 C
td(off)
100
tf
TC = 125 C
10
20
30
40
td(on)
10
20
10
0
50
40
Gate Resistance, RG []
80
Figure 16. Switching Loss vs. Gate Resistance
10
600
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 400V, VGE = 15V
o
IC = 40A
TC = 25 C
o
o
TC = 125 C
td(off)
100
tf
10
20
40
60
TC = 25 C
Switching Loss [mJ]
Switching Time [ns]
60
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
o
TC = 125 C
Eon
Eoff
1
0.3
0
80
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
10
20
30
40
Gate Resistance, RG []
50
Figure 18. Turn off Switching
SOA Characteristics
10
200
Common Emitter
VGE = 15V, RG = 10
100
Collector Current, IC [A]
Eon
o
TC = 25 C
Switching Loss [mJ]
tr
100
o
TC = 125 C
Eoff
1
10
Safe Operating Area
o
VGE = 15V, TC = 125 C
0.1
20
1
40
60
1
80
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. C1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
5
www.fairchildsemi.com
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 19.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.01
0.05
0.02
0.01
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. C1
6
www.fairchildsemi.com
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Mechanical Dimensions
Figure 20. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. C1
8
www.fairchildsemi.com
FGH40N60UF — 600 V, 40 A Field Stop IGBT
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