FS5AS-10A High-Speed Switching Use Nch Power MOS FET REJ03G0246-0100 Preliminary Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 500 V rDS(ON) (max) : 1.5 Ω ID : 5 A Outline MP-3A 2, 4 4 1. 2. 3. 4. 1 12 3 Gate Drain Source Drain 3 Applications SMPS, Lamp Ballast, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Rev.1.00, Aug.20.2004, page 1 of 6 Symbol VDSS VGSS Ratings 500 ±30 Unit V V ID IDM IDA PD Tch Tstg — 5 15 5 65 – 55 to +150 – 55 to +150 0.32 A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 200 µH Typical value FS5AS-10A Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Rev.1.00, Aug.20.2004, page 2 of 6 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min. 500 ±30 — — 2.5 — — 2.7 — — — — — — — — — Typ. — — — — 3.0 1.2 2.4 4.5 700 70 15 15 20 90 30 1.5 — Max. — — ±10 1 3.5 1.5 3.0 — — — — — — — — 2.0 1.92 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VGS = ±25 V, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V ID = 2 A, VGS = 10 V ID = 2 A, VDS = 10 V VDS = 25 V, VGS = 10 V, f = 1MHz VDD = 200 V, ID = 2 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 2 A, VGS = 0 V Channel to case FS5AS-10A Performance Curves Drain Power Dissipation Derating Curve Maximum Safe Operating Area Drain Current ID (A) 60 50 40 30 20 10 0 0 50 100 tw = 10µs 101 7 5 3 2 100µs 100 7 5 3 Tc = 25°C 2 Single Pulse 1ms Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) 10 5 VGS = 20V 10V 6V Tc = 25°C Pulse Test Drain Current ID (A) 102 7 5 3 2 DC 10–1 0 1 2 10 2 3 5 710 2 3 5 710 2 3 5 7103 200 150 8 6 VGS = 20V 5V 10V PD = 65W 5V 4 2 Drain Current ID (A) Drain Power Dissipation PD (W) 70 4 Tc = 25°C Pulse Test 6V 3 2 1 4V 4V 0 4 8 12 16 2 4 6 8 Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) Tc = 25°C Pulse Test 16 ID = 8A 12 8 5A 3A 4 0 0 Drain-Source Voltage VDS (V) 20 0 0 20 4 8 12 16 Gate-Source Voltage VGS (V) Rev.1.00, Aug.20.2004, page 3 of 6 20 Drain-Source On-State Resistance rDS(ON) (Ω) Drain-Source On-State Voltage VDS(ON) (V) 0 10 4.0 Tc = 25°C Pulse Test 3.2 2.4 VGS = 10V 1.6 20V 0.8 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Drain Current ID (A) FS5AS-10A Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) 10 Tc = 25°C VDS = 10V Pulse Test 8 6 4 2 0 0 4 8 12 16 20 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 100 7 5 4 3 2 Tc = 125°C 75°C 25°C 10–1 –1 10 2 3 4 5 7 100 2 3 4 5 7 101 Drain Current ID (A) Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) 103 7 5 3 2 5 4 3 Ciss 102 7 5 3 2 Coss Crss 101 Tch = 25°C 7 5 f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7101 2 3 5 7 102 2 3 Switching Time (ns) Capacitance (pF) VDS = 10V Pulse Test Gate-Source Voltage VGS (V) 2 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 2 102 7 5 4 3 td(off) tf tr 2 td(on) 101 7 5 10–1 2 3 4 5 7 100 2 3 4 5 7 101 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 20 10 VGS = 0V Pulse Test Tch = 25°C ID = 5A 16 Source Current IS (A) Gate-Source Voltage VGS (V) 102 7 5 4 3 2 101 7 5 4 3 2 VDS = 100V 12 200V 8 400V 4 0 0 8 16 24 32 Gate Charge Qg (nC) Rev.1.00, Aug.20.2004, page 4 of 6 40 8 Tc = 125°C 75°C 6 25°C 4 2 0 0 0.8 1.6 2.4 3.2 Source-Drain Voltage VSD (V) 4.0 On-State Resistance vs. Channel Temperature (Typical) 101 7 5 4 3 Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance Drain-Source On-State Resistance rDS(ON) (t°C) rDS(ON) (25°C) FS5AS-10A VGS = 10V ID = 2A Pulse Test 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 Threshold Voltage vs. Channel Temperature (Typical) 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 Breakdown Voltage vs. Channel Temperature (Typical) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 0 50 100 Transient Thermal Impedance Characteristics 101 7 5 3 D = 1.0 2 0.5 100 7 0.2 5 PDM 0.1 0.05 0.02 0.01 Single Pulse 3 2 tw T D = tw T 10–1 10–4 2 3 57 10–3 2 3 57 10–2 2 3 57 10-1 2 3 57 100 2 3 57101 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 150 Channel Temperature Tch (°C) Transient Thermal Impedance Zth(ch-c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Channel Temperature Tch (°C) –50 90% D.U.T. RGEN RL Vin Vout RGS 10% 10% 10% VDD 90% td(on) Rev.1.00, Aug.20.2004, page 5 of 6 tr 90% td(off) tf FS5AS-10A Package Dimensions MP-3A Cu alloy 2.3 0.5 ± 0.1 1 max 2.5 min 6.1 ± 0.2 5.3 ± 0.2 0.76 ± 0.2 Lead Material 0.32 1 ± 0.2 6.6 Mass (g) (reference value) 0.76 0.1 ± 0.1 1.4 ± 0.2 JEDEC Code 10.4 max EIAJ Package Code 0.5 ± 0.2 2.3±0.2 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE 1 2.3 Symbol Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) +3 Surface-mounted type Plastic Magazine (Tube) 75 Type name Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example FS5AS-10A-T13 FS5AS-10A Sales Strategic Planning Div. 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