FW513 Ordering number : ENA1870 SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET FRD : Ultrahigh-Speed Switching Diode FW513 General-Purpose Switching Device Applications Features • • • FET RDS(on)=5.8Ω (typ.), 10V drive FRD VF=1.1V (typ.), trr=40ns (typ.) Nch MOSFET+FRD Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 600 ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg V ±30 V 0.35 A PW≤10μs, duty cycle≤1% 1.4 A When mounted on ceramic substrate (1000mm2×0.8mm) 1unit 1.5 W 150 °C --55 to +150 °C Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7005A-009 • Package : SOP8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 1,000 pcs./reel 8 0.2 0.3 0.8 5.0 5 Packing Type : TL Marking 1.5 1.8 MAX W513 4.4 0.7 0.8 6.0 0.1 1 4 1.27 0.43 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode TL LOT No. Electrical Connection 8 7 6 5 1 2 3 4 SANYO : SOP8 http://semicon.sanyo.com/en/network N1710PB TKIM TC-00002515 No. A1870-1/5 FW513 Continued from preceding page. Parameter Symbol Conditions Ratings Unit [FRD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current VRRM VRSM Surge Forward Current IO IFSM Junction Temperature Tj Storage Temperature Tstg 600 V 600 V 1 A Sine wave, 10ms 4 A 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=10mA, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±24V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.2A ID=0.2A, VGS=10V VDS=30V, f=1MHz 130 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage 600 V VDS=480V, VGS=0V 3 1 mA ±10 μA 5 0.48 Static Drain-to-Source On-State Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss pF Crss VDS=30V, f=1MHz VDS=30V, f=1MHz 25 Reverse Transfer Capacitance 4.0 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9.1 ns Rise Time tr See specified Test Circuit. 15 ns Turn-OFF Delay Time td(off) tf See specified Test Circuit. 18 ns Fall Time See specified Test Circuit. 19 ns Total Gate Charge Qg VDS=300V, VGS=10V, ID=0.35A VDS=300V, VGS=10V, ID=0.35A 6.2 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=300V, VGS=10V, ID=0.35A IS=0.35A, VGS=0V VR VF IR=1mA IF=1A IR trr1 VR=600V IF=1A, di / dt=100A/μs trr2 IF=0.5A, IR=1A Junction -Case 5.8 V S 7.6 Ω 0.9 nC 3.8 nC 0.76 1.2 V 1.1 1.3 V 10 μA 50 ns [FRD] Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Rth(j-c) 600 V 40 16 ns 6 °C / W Switching Time Test Circuit [MOSFET] 10V 0V VDD=200V VIN ID=0.2A RL=1000Ω VIN D PW=10μs D.C.≤1% VOUT G FW513 P.G 50Ω S No. A1870-2/5 FW513 [MOSFET] ID -- VGS 2.0 10 V VDS=10V Drain Current, ID -- A 1.6 1.8 8V V 15 1.6 7V Drain Current, ID -- A 1.8 1.4 1.2 1.0 0.8 0.6 6V 0.4 25°C 1.4 75°C 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0 [MOSFET] Ta= --2 5°C ID -- VDS 2.0 VGS=5V 0 2 4 6 8 10 12 14 16 18 0 20 Drain-to-Source Voltage, VDS -- V IT15875 RDS(on) -- VGS [MOSFET] 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 20 Ta=25°C IT16051 [MOSFET] 8 7 6 5 0 4 8 12 16 20 2A =0. , ID V 0 1 8 = V GS 6 4 2 --40 --20 0 20 40 60 80 100 120 140 160 IT16053 IS -- VSD [MOSFET] VGS=0V 1.0 7 5 3 C 5° --2 = Ta °C 75 2 0.1 7 5 3 3 2 0.1 7 5 3 2 0.01 7 5 --25° C °C 25 5 25°C 7 3 2 2 2 3 5 7 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A SW Time -- ID 100 7 3 0.001 0.2 5 7 1.0 2 IT16077 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V [MOSFET] VDD=200V VGS=10V Ciss, Coss, Crss -- VDS 7 5 1.2 IT16054 [MOSFET] f=1MHz 3 2 Ciss, Coss, Crss -- pF 5 tf Switching Time, SW Time -- ns 10 3 2 1.0 0.01 0.001 12 Ambient Temperature, Ta -- °C VDS=10V 2 14 0 --60 24 IT16052 Gate-to-Source Voltage, VGS -- V | yfs | -- ID [MOSFET] 3 16 Ta= 75° C 4 Forward Transfer Admittance, | yfs | -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=0.2A Source Current, IS -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 18 9 3 td (off) 2 tr td(on) 10 Ciss 100 7 5 Coss 3 2 10 7 5 Crss 3 7 5 0.1 2 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT15893 1.0 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT15894 No. A1870-3/5 FW513 VGS -- Qg [MOSFET] 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 1.0 7 5 3 2 [MOSFET] IDP=1.4A (PW≤10μs) 100 μs 1 m ms s ID=0.35A 10 10 DC 0.1 7 5 3 2 0m s op era tio n Operation in this area is limited by RDS(on). 0.01 7 5 3 2 Ta=25°C Single pulse When mounted on ceramic substrate (1000mm2×0.8mm) 1unit 0.001 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V IT16055 PD -- Ta 1.8 9 ASO 10 7 5 3 2 VDS=300V ID=0.35A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 16 5 71000 IT16075 [MOSFET] When mounted on ceramic substrate (1000mm2×0.8mm) 1unit 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IF -- VF 10 160 IT16076 [FRD] IR -- VR 100 [FRD] Reverse Current, IR -- μA 0° C 0°C -25 °C 75 °C 1.0 25° 0.001 0 0.2 0.6 0.8 1.0 1.2 Forward Voltage, VF -- V Junction Capacitance, Cj -- pF 75°C 0.1 50°C 0.01 25°C 2 10 7 5 3 2 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 0 100 200 2 3 5 7 100 IT15499 300 400 500 Reverse Voltage, VR -- V [FRD] 3 3 100°C 1.0 0.001 1.4 f=100kHz 2 125°C IT15497 Cj -- VR 5 1.0 0.1 10 50°C 0.4 600 IT15498 IFSM -- t 14 Surge Forward Current, IFSM(Peak) -- A 0.01 C 50° C 125 °C 10 0.1 Ta= 1 Forward Current, IF -- A Ta=150°C [FRD] 12 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 IT15500 No. A1870-4/5 FW513 Note on usage : Since the FW513 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2010. Specifications and information herein are subject to change without notice. PS No. A1870-5/5