GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • The 4th generation • FS (fast switching) • Enhancement-mode • High speed: tf = 0.03 µs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.) • FRD included between emitter and collector. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 15 1 ms ICP 30 DC IF 15 1 ms IFM 30 Collector power dissipation (Tc = 25°C) PC 30 W Junction temperature Tj 150 °C Tstg −55~150 °C Collector current Emitter-collector forward current Storage temperature range A A JEDEC ― JEITA ― TOSHIBA 2-10R1C Weight: 1.7 g Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT15J321 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 1.0 mA VGE (OFF) IC = 1.5 mA, VCE = 5 V 3.5 6.5 V VCE (sat) IC = 15 A, VGE = 15 V 1.90 2.45 V VCE = 20 V, VGE = 0, f = 1 MHz 2300 pF Inductive Load 0.04 ton VCC = 300 V, IC = 15 A 0.17 tf VGG = 15 V, RG = 43 Ω 0.03 0.15 0.34 Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Rise time Switching time tr Turn-on time Fall time Turn-off time (Note 1) toff µs Peak forward voltage VF IF = 15 A, VGE = 0 2.0 V Reverse recovery time trr IF = 15 A, di/dt = −100 A/µs 200 ns Thermal resistance (IGBT) Rth (j-c) 4.16 °C/W Thermal resistance (Diode) Rth (j-c) 4.63 °C/W Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 −VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% 10% 10% td (on) td (off) 10% tr tf toff ton Note 2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 5% VCE Eoff Eon 2 2002-01-18 GT15J321 IC – VCE VCE – VGE 50 20 Common emitter 20 Collector current 30 Collector-emitter voltage VCE IC (A) 40 15 9 20 8 10 VGE = 7 V 0 0 1 Tc = −40°C (V) Common emitter Tc = 25°C 2 3 4 Collector-emitter voltage VCE 16 15 8 4 0 0 5 30 12 (V) IC = 6 A 4 8 12 Gate-emitter voltage 16 VGE 20 Common emitter Collector-emitter voltage VCE 16 30 12 15 8 4 IC = 6 A 4 8 12 Gate-emitter voltage 16 VGE Tc = 125°C (V) (V) Collector-emitter voltage VCE Common emitter Tc = 25°C 16 30 12 15 8 4 0 0 20 IC = 6 A 4 8 IC – VGE 20 (V) VCE (sat) – Tc Common emitter VCE = 5 V Collector-emitter saturation voltage VCE (sat) (V) Common emitter (A) IC 16 VGE 4 25 Collector current 12 Gate-emitter voltage (V) 30 20 15 10 5 (V) VCE – VGE VCE – VGE 20 0 0 20 Tc = 125°C −40 VGE = 15 V 30 A 3 15 A 2 IC = 6 A 1 25 0 0 4 8 12 Gate-emitter voltage 16 VGE 0 −60 20 (V) −20 20 60 Case temperature Tc 3 100 140 (°C) 2002-01-18 GT15J321 Switching time ton, tr – RG 0.5 (µs) Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C ton, tr 1 Switching time ton, tr – IC 3 0.3 ton Switching time Switching time ton, tr (µs) 3 0.1 0.05 tr 0.03 Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 1 0.5 0.3 ton 0.1 0.05 0.03 tr 0.01 1 3 10 30 100 Gate resistance RG 300 0.01 1000 0 3 (Ω) (µs) 0.3 toff 0.1 0.05 0.03 0.01 1 tf 3 10 30 100 Gate resistance RG Switching loss 300 toff 0.5 0.3 tf 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0.05 0.03 0 (Ω) 6 Switching loss Eon, Eoff – RG 10 Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C (Note 2) 9 (mJ) 3 Eon, Eoff 1 0.3 Eoff 0.1 12 IC 15 (A) Eon, Eoff – IC Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 5 Eon 0.5 3 Collector current Switching loss (mJ) Eon, Eoff 1 Switching loss 3 (A) 1 0.01 1000 10 5 IC 15 Switching time toff, tf – IC toff, tf 0.5 12 3 Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C Switching time (µs) toff, tf Switching time 1 9 Collector current Switching time toff, tf – RG 3 6 (Note 2) 0.5 0.3 0.1 Eoff Eon 0.05 0.03 0.05 0.03 1 3 10 30 100 Gate resistance RG 300 0.01 1000 (Ω) 0 3 6 Collector current 4 9 IC 12 15 (A) 2002-01-18 GT15J321 VCE, VGE – QG C – VCE 500 Cies 3 10 30 100 300 1000 Collector-emitter voltage VCE 300 200 8 4 100 20 40 (V) IF − VF Irr (A) Reverse recovery current IF Forward current 15 Tc = 125°C 25 5 −40 0.4 0.8 1.2 Forward voltage 1.6 VF 30 10 100 30 0 3 (V) IC max (pulsed)* IF 10 15 (A) 30 50 µs* 100 µs* 1 ms* DC operation 10 ms* 1 *: Single nonrepetitive pulse 0.5 Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 12 Reverse bias SOA (A) 3 9 Forward current 10 IC (A) IC Collector current 5 6 50 IC max (continuous) 10 300 Irr 1 2.0 1000 3 5 Collector current 30 0 120 (nC) trr Safe operating area 50 QG 100 Common collector di/dt = −100 A/µs VGE = 0 : Tc = 25°C : Tc = 125°C (A) Common collector VGE = 0 20 0 0 80 trr, Irr − IF 100 10 60 Gate charge 30 25 200 VCE = 100 V 0 0 3000 (V) 12 (ns) 3 1 Cres Common emitter VGE = 0 f = 1 MHz Tc = 25°C 300 trr 10 Coes 16 Reverse recovery time Capacitance 100 RL = 20 Ω 400 Tc = 25°C VGE (V) Collector-emitter voltage VCE 300 C (pF) 1000 30 20 Common emitter Gate-emitter voltage 3000 3 1 0.5 0.3 30 100 Collector-emitter voltage VCE 300 0.1 1 1000 (V) Tj < = 125°C VGE = 15 V RG = 43 Ω 3 10 30 100 Collector-emitter voltage VCE 5 300 1000 (V) 2002-01-18 GT15J321 Transient thermal impedance rth (t) (°C/W) 10 10 rth (t) – tw 2 Tc = 25°C 1 FRD 10 10 10 10 10 0 IGBT −1 −2 −3 −4 10 −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 6 2002-01-18 GT15J321 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 2002-01-18