HAT1046R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-1222 (Z) 1st. Edition Mar. 2001 Features • • • • Low-voltage drive (2.5 V drive) Low on resistance Capable of 4 V gate drive Low on-resistance R DS(on) = 30 mΩ typ. (at VGS = –4 V) External View SOP-8 8 5 7 6 3 1 2 4 5 6 D D 7 8 D D 4 G 2 G S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain HAT1046R Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS –20 V Gate to source voltage VGSS ±12 V Drain current ID –6 A 1 Drain peak current I D (pulse)* –48 A Body-drain diode reverse drain current I DR –6 A Permissible channel loss Pch*2 2.0 W 2 Pch* 3.0 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. 2. 3. 4. 2 PW ≤ 10 µs, duty cycle ≤ 1% 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Value at Tch=25°C, Rg ≥ 50Ω HAT1046R Electrical Characteristics Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –20 — — V I D = –10 mA, VGS = 0 Gate to source cutoff current I GSS — — ±0.1 µA VGS = ±12 V, VDS = 0 Zero gate voltage drain current I DSS — — –1 µA VDS = –20 V, VGS = 0 Gate to source cutoff voltage VGS(off) –0.4 — –1.4 V VDS = –10 V, ID = –1 mA Forward transfer admittance |yfs| 6.5 11 — S I D = –3 A, VDS = –10 V*1 Static drain to source on state resistance RDS(on) — 30 40 mΩ I D = –3 A, VGS = –4 V*1 RDS(on) — 45 60 mΩ I D = –3 A, VGS = –2.5 V*1 Input capacitance Ciss — 1630 — pF VDS = –10 V, VGS = 0 Output capacitance Coss — 700 — pF f = 1 MHz Reverse transfer capacitance Crss — 410 — pF Total gate charge Qg — 12 — nc VDD = –10 V Gate to source charge Qgs — 8 — nc VGS = –4 V Gate to drain charge Qgd — 4 — nc I D = –6 A Turn-on delay time td(on) — 35 — ns VGS = –4 V, ID = –3 A Rise time tr — 180 — ns VDD ≅ –10 V Turn-off delay time td(off) — 155 — ns Fall time tf — 185 — ns Body-drain diode forward voltage VDF — –0.85 –1.11 V I F = –6 A, VGS = 0*4 Body-drain diode reverse recovery time trr — 65 — ns I F = –6 A, VGS = 0 diF/dt = 20 A/µs Note: 1. Pulse measurement 3 HAT1046R Main Characteristics Power vs. Temperature Derating O 1 ive Dr 2.0 er 0 50 n Op tio 1.0 ra ive pe Dr at ion 150 Ambient Temperature 200 Ta (°C) 10 µs 1 -10 DC PW Op er -3 -0.3 -0.1 on Operation in this area is limited by RDS(on) 100 µs m s = 10 ati -1 -0.03 100 Maximum Safe Operation Area -30 Drain Current 3.0 -100 ID (A) Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW < 10 s 2 Channel Dissipation Pch (W) 4.0 ms (P W Note < 5 10 s) Ta = 25°C 1 shot Pulse 1 Drive Operation -0.01 -0.1 -0.3 -1 -3 -10 Drain to source Voltage -30 -100 VDS (V) Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) -20 Typical Output Characteristics -10 V -5 V Typical Transfer Characteristics -20 -2.5 V -3 V -16 ID (A) ID (A) -4 V -8 -2 V -4 Pulse Test 0 -2 -4 Tc = -25°C -6 -8 -10 VDS (V) 75°C 25°C -12 -8 V DS = -10 V Pulse Test -4 VGS = -1.5 V Drain to Source Voltage 4 Drain current Drain Current -12 -16 0 -1 -2 -3 Gate to Source Voltage -4 -5 VGS (V) HAT1046R Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 -0.5 Pulse Test Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) Static Drain to Source on State Resistance vs. Drain Current -0.4 -0.3 -0.2 I D = -5 A -0.1 -2 A -1 A Pulse Test 0.2 0.1 VGS = -2.5 V 0.05 -4 V 0.02 0.01 0.005 -2 -4 -6 -8 Static Drain to Source on State Resistance RDS(on) (Ω) Gate to Source Voltage -10 -2, -1 A I D = -5A 0.06 V GS = -2.5 V 0.04 -5, -2 , -1 A 0.02 0 -40 -4 V 0 40 80 120 Case Temperature Tc (°C) 0.5 1 2 5 Drain Current VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test 0.08 0.2 160 10 20 ID (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 0 50 20 Tc = -25°C 10 75°C 5 25°C 2 V DS = -10 V Pulse Test 1 0.5 -0.2 -0.5 -1 -2 Drain Current -5 -10 ID (A) -20 5 HAT1046R Body-Drain Diode Reverse Recovery Time 5000 di / dt = 20 A / µs V GS = 0, Ta = 25°C 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 Typical Capacitance vs. Drain to Source Voltage 200 100 50 2000 Ciss 1000 Coss 500 Crss 200 100 50 20 VGS = 0 f = 1 MHz 20 10 -0.2 10 -0.5 -1 -2 -5 Reverse Drain Current -10 -20 0 IDR (A) Dynamic Input Characteristics V GS -6 VDD = -20 V -10 V -40 -5 V -8 I D = -6 A 0 8 16 Gate Charge 24 32 Qg (nc) -10 40 IDR (A) Reverse Drain Current -4 V DS -30 -50 6 -2 VGS (V) -10 -20 -20 0 VDD = -5 V -10 V -20 V -16 -20 VDS (V) Reverse Drain Current vs. Source to Drain Voltage Gate-source voltage Drain to Source Voltage VDS (V) 0 -4 -8 -12 Drain to Source Voltage -16 -12 V GS = -5 V -8 0, 5 V -4 Pulse Test 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 VSD (V) HAT1046R Switching Characteristic Switching Time t (ns) 1000 tr 300 tf t d(off) 100 t d(on) 30 V GS = -4 V, V DD =-10V PW = 3 µs, duty < 1 % 10 -0.2 -0.5 -1 -2 Drain Current -5 -20 ID (A) Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor -10 Vin 10% D.U.T. RL 90% Vin -4 V 50Ω V DD = -10 V 90% 90% Vout td(on) 10% 10% tr td(off) tf 7 HAT1046R Normalized Transient Thermal Impedance vs. Pulse Width (1 drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 θ ch-f(t) = γ s (t) • θ ch - f θ ch-f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.01 e uls p ot PDM h 0.001 1s D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m Pulse Width 1 10 100 1000 10000 PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.2 0.1 0.01 0.1 0.05 0.02 θ ch-f(t) = γ s (t) • θ ch - f θ ch-f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.01 0.001 t ho lse PDM pu 1s D= PW T PW T 0.0001 10 µ 8 100 µ 1m 10 m 100 m Pulse Width 1 10 PW (S) 100 1000 10000 HAT1046R Package Dimensions Unit: mm 2 4 0.15max. 1.27max. 0.4min. 5 6.2max. 5.8min. 4.0max. 3.8min. 8 0~8° 5.0max. 4.8min. 7 6 0.25max. 0.19min. 1.75max. 1.35min. 0.75max. 1.27typ. 3 0.51max. 0.33min. 0.15 0.25max. 0.10min. Pin No. 1 0.25 M Hitachi Code JEDEC EIAJ FP-8DA — — 9 HAT1046R Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 10