HITACHI HAT2026R

HAT2026R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-523 C (Z)
4th. Edition
February 1999
Features
•
•
•
•
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
SOP–8
8
5 6 7 8
D D D D
4
G
5
7 6
3
1 2
4
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
HAT2026R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
± 12
V
Drain current
ID
11
A
88
A
11
A
2.5
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
20
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
± 12
—
—
V
I G = ± 100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
± 10
µA
VGS = ± 10 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
1
µA
VDS = 20 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.4
—
1.4
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
0.011
0.015
Ω
I D = 6 A, VGS = 4 V Note3
resistance
RDS(on)
—
0.014
0.021
Ω
I D = 6 A, VGS = 2.5 V Note3
Forward transfer admittance
|yfs|
18
27
—
S
I D = 6 A, VDS = 10 V Note3
Input capacitance
Ciss
—
1760
—
pF
VDS = 10 V
Output capacitance
Coss
—
1130
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
450
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
35
—
ns
VGS = 4 V, ID = 6 A
Rise time
tr
—
275
—
ns
VDD ≅ 10 V
Turn-off delay time
t d(off)
—
300
—
ns
Fall time
tf
—
340
—
ns
Body–drain diode forward voltage
VDF
—
0.83
1.08
V
IF = 11 A, VGS = 0 Note3
Body–drain diode reverse
recovery time
t rr
—
75
—
ns
IF = 11 A, VGS = 0
diF/ dt = 20 A/µs
Note: 3. Pulse test
The specifications may be change without notice.
2
HAT2026R
Main Characteristics
Power vs. Temperature Derating
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
Maximum Safe Operation Area
30
I D (A)
Pch (W)
4.0
PW
10
DC
Drain Current
Channel Dissipation
2.0
1.0
1
0.3
50
100
150
Ambient Temperature
200
Ta (°C)
=
10 µs
100 µs
m
s
10
m
s
at
ion
(P
W
< Note
Operation in
10 4
s)
this area is
limited by R DS(on)
0.1
0.03
0
Op
er
3
1
Ta = 25 °C
1 shot Pulse
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
Pulse Test
(A)
10V
5V
4V
3V
2.5 V
ID
40
30
2V
20
10
V GS = 1.5 V
0
Typical Transfer Characteristics
50
2
4
6
Drain to Source Voltage
8
10
V DS (V)
Drain Current
Drain Current
I D (A)
50
V DS = 10 V
Pulse Test
40
30
20
10
0
Tc = –25°C
75°C
25°C
1
2
3
Gate to Source Voltage
5
4
V GS (V)
3
HAT2026R
0.12
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
0.1
0.05
I D = 10 A
0.08
5A
2A
8
10
0.04
0.02
I D = 10 A
2 A, 5 A
VGS = 2.5 V
0.01
2 A, 5 A, 10 A
4V
0
–40
0.01
4V
0.002
0.5
1
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.05
Pulse Test
0.03
VGS = 2.5 V
0.005
0.04
2
4
6
Gate to Source Voltage
0.02
0
40
80
120
160
Case Temperature Tc (°C)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Pulse Test
0.16
0
4
Drain to Source On State Resistance
R DS(on) ( Ω )
V DS(on) (V)
0.20
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
2
5
10 20
Drain Current I D (A)
5
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20
10
75 °C
25 °C
5
2
1
0.5
V DS = 10 V
Pulse Test
1
2
5
10
20
Drain Current I D (A)
50
HAT2026R
Body–Drain Diode Reverse
Recovery Time
10000
5000
Capacitance C (pF)
200
100
50
20
10
5
0.2
30
10
0
Coss
500
16
V DD = 5 V
10 V
20 V
12
V GS
V DD = 20 V
10 V
5V
20
40
60
80
Gate Charge Qg (nc)
VGS = 0
f = 1 MHz
0
8
4
0
100
4
8
12
16
20
Drain to Source Voltage V DS (V)
1000
V GS (V)
20
I D = 11 A
Crss
100
0.5
1
2
5
10 20
Reverse Drain Current I DR (A)
V DS
20
1000
200
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
40
Ciss
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
Dynamic Input Characteristics
50
2000
500
Switching Time t (ns)
Reverse Recovery Time trr (ns)
500
Typical Capacitance vs.
Drain to Source Voltage
200
100
50
20
10
0.2
Switching Characteristics
t d(on)
tf
tr
t d(off)
V GS = 4 V, V DD = 10 V
PW = 3 µs, duty < 1 %
0.5
1
2
Drain Current
5
10
I D (A)
20
5
HAT2026R
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current I DR (A)
50
Pulse Test
40
30
5V
V GS = 0, –5 V
20
10
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 83.3 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
PDM
lse
0.001
u
tp
D=
o
1sh
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
6
10
100
1000
10000
HAT2026R
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
HAT2026R
Package Dimensions
Unit: mm
1
4
6.2 Max
0.25 Max
5
1.75 Max
8
4.0 Max
5.0 Max
0 – 8°
0.51 Max
0.25 Max
1.27
1.27 Max
0.15
0.25 M
8
Hitachi code
EIAJ
JEDEC
FP–8DA
—
MS-012AA
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.