HAT2059R/HAT2059RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-935 (E) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting “J” Is for automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 4 5 6 D D 7 8 D D 4 G 2 G S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain HAT2059R/HAT2059RJ Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol HAT2059R HAT2059RJ Unit Drain to source voltage VDSS 150 150 V Gate to source voltage VGSS ±20 ±20 V Drain current ID 2.5 2.5 A 20 20 A 2.5 2.5 A — 2.5 A Drain peak current I D (pulse) Body-drain diode reverse drain current I DR Avalanche current I AP Avalanche energy Channel dissipation Note4 EAR Note4 Note1 — 0.469 mJ Pch Note2 2 2 W Pch Note3 3 3 W Channel temperature Tch 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Notes: 1. 2. 3. 4. 2 PW ≤ 10 µs, duty cycle ≤ 1% 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω HAT2059R/HAT2059RJ Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 150 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Zero gate voltage HAT2059R I DSS — — 1 µA VDS = 150 V, VGS = 0 drain current HAT2059RJ I DSS — — 0.1 µA Zero gate voltage HAT2059R I DSS — — — µA VDS = 120 V, VGS = 0 drain current HAT2059RJ I DSS — — 10 µA Ta = 125°C Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 2.0 3 — S I D = 1 A Note1, VDS = 10 V Static drain to source on state RDS(on) — 260 320 mΩ ID = A Note1 , VGS = 10 V Note1 resistance RDS(on) — 290 380 mΩ ID = 1 A Input capacitance Ciss — 410 — pF VDS = 10 V, VGS = 0 Output capacitance Coss — 145 — pF f = 1 MHz Reverse transfer capacitance Crss — 85 — pF Turn-on delay time td(on) — 10 — ns VGS = 10 V, ID = 1 A Rise time tr — 17 — ns VDD ≅ 30 V Turn-off delay time td(off) — 110 — ns Fall time tf — 50 — ns Body-drain diode forward voltage VDF — 0.85 1.1 V I F = 2.5 A, VGS = 0*1 Body-drain reverse recovery time trr — 85 — ns I F = 2.5 A, VGS = 0 diF/dt = 50 A/µs Note: , VGS = 4 V 5. Pulse test 3 HAT2059R/HAT2059RJ Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating Test conditions : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW < 10 s 10 µs 3.0 ID (A) 30 10 Drain Current Pch (W) 4.0 1 10 3 Dr Op er n 1.0 tio ra ive pe 1 O 2.0 ive Dr Channel Dissipation 2 DC at ion 0.3 0.1 0.03 0.01 0 50 100 150 Ambient Temperature 200 Op er Operation in this area is limited by RDS(on) ati 1 = on 10 0µ s m s ms (P No W te < 5 10 s) Ta = 25°C 1 shot Pulse 1 Drive Operation 0.3 Ta (°C) PW 30 100 1 3 10 Drain to Source Voltage VDS (V) Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics 5 10 V 4V 5 Pulse Test V DS = 10 V 3.0 V ID (A) 3 2.5 V Drain Current Drain Current ID (A) 4 2 1 4 Pulse Test 3 2 1 Tc = 75°C VGS = 2.0 V 0 4 2 4 6 Drain to Source Voltage 8 10 VDS (V) 0 25°C -25°C 1 2 3 Gate to Source Voltage 4 5 VGS (V) HAT2059R/HAT2059RJ Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (V) 2 Pulse Test 1.6 1.2 ID=2A 0.8 1A 0.4 0.5 A Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 Pulse Test 0.01 12 4 8 Gate to Source Voltage Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 0.5 A 1A 2A 1.2 0.8 V GS = 4 V 2A 1A 0.5 A 0.4 0 -40 10 V 0 40 80 Case Temperature 0.1 0.2 16 20 VGS (V) 120 160 Tc (°C) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) 0 5 10 20 0.5 1 2 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 50 20 Tc = -25°C 10 25°C 5 75°C 2 V DS = 10 V Pulse Test 1 0.5 0.1 0.3 1 3 Drain Current 10 30 100 ID (A) 5 HAT2059R/HAT2059RJ 1000 5000 di / dt = 50 A / µs V GS = 0, Ta = 25°C 500 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Surce Voltage Body-Drain Diode Reverse Recovery Time 200 100 50 1000 Ciss 500 200 Coss 100 50 20 10 0.1 10 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 10 20 30 Drain to Source Voltage V GS 12 200 8 V DS 100 0 4 V DD = 120V 100V 80V 8 16 Gate Charge 6 16 V DD = 120 V 100 V 80 V 24 32 Qg (nc) 0 40 40 50 VDS (V) Switching Characteristics 1000 300 Switching Time t (ns) 300 I D = 2.5 A Gate to Source Voltage VDS (V) Drain to Source Voltage 400 20 VGS (V) Dynamic Input Characteristics 500 Crss VGS = 0 f = 1 MHz 20 t d(off) 100 tf 30 tr t d(on) 10 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2059R/HAT2059RJ Reverse Drain Current vs. Source to Drain Voltage EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Pulse Test 4 Repetive Avalanche Energy Reverse Drain Current IDR (A) 5 3 2 1 0 10 V V GS = 0, -5 V 5V 0.4 0.8 1.2 Source to Drain Voltage 0.5 I AP = 2.5 A V DD = 50 V L = 100 µH duty < 0.1 % Rg > 50 Ω 0.4 0.3 0.2 0.1 0 25 1.6 2.0 VSD (V) 50 75 100 Channel Temperature Avalanche Test Circuit Avalanche Waveform EAR = L V DS Monitor 125 150 Tch (°C) 1 2 VDSS 2 • L • I AP • VDSS - V DD I AP Monitor V (BR)DSS I AP Rg V DS VDD D. U. T ID Vin 15 V 50Ω 0 VDD Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 10 V 50Ω V DD = 30 V 10% 10% 90% td(on) tr 10% 90% td(off) tf 7 HAT2059R/HAT2059RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 θ ch-f(t) = γ s (t) • θch - f θ ch-f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.02 0.01 0.01 e uls p ot PDM h 0.001 1s D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m Pulse Width 1 10 100 1000 10000 PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.2 0.1 0.01 0.1 0.05 θ ch-f(t) = γ s (t) • θch - f θ ch-f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.02 0.01 e uls 0.001 PDM p ot D= h 1s PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m Pulse Width 8 1 PW (S) 10 100 1000 10000 HAT2059R/HAT2059RJ Package Dimensions Unit: mm 2 4 0.15max. 1.27max. 0.4min. 5 6.2max. 5.8min. 4.0max. 3.8min. 8 0~8° 5.0max. 4.8min. 7 6 0.25max. 0.19min. 1.75max. 1.35min. 0.75max. 1.27typ. 3 0.51max. 0.33min. 0.15 0.25max. 0.10min. Pin No. 1 0.25 M Hitachi Code JEDEC EIAJ FP-8DA — — 9 HAT2059R/HAT2059RJ Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 10