HAT2196C Silicon N Channel MOS FET Power Switching REJ03G1235-0500 Rev.5.00 Jun. 13, 2005 Features • Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 2 3 4 5 DDD D 4 1 2 3 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) Rev.5.00, Jun. 13, 2005, page 1 of 6 Ratings 20 ±12 2.5 10 2.5 850 150 –55 to +150 Unit V V A A A mW °C °C HAT2196C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Rev.5.00, Jun. 13, 2005, page 2 of 6 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) Min 20 ±12 — — 0.4 — — 4.5 — — — — — — — — — Typ — — — — — 45 66 7 270 85 35 2.8 0.6 0.5 8 19 20 Max — — ±10 1 1.4 58 93 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns tf VDF — — 5 0.8 — 1.1 ns V Test Conditions ID = 10 mA, VGS = 0 IG = ±10 µA, VDS = 0 VGS = ±10 V, VDS = 0 VDS = 20 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1.3 A, VGS = 4.5 V Note3 ID = 1.3 A, VGS = 2.5 V Note3 ID = 1.3 A, VGS = 10 V Note3 VGS = 0, f = 1 MHz, VDS = 10 V VGS = 4.5 V, VDS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 1.3 A, VDD = 10 V, RL = 7.7 Ω , Rg = 4.7 Ω IF = 2.5 A, VGS = 0 Note3 HAT2196C Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm) (A) 10 µs 1.2 Drain Current ID Power Dissipation Pch (W) 1.6 0.8 0.4 0 50 100 150 PW 1 DC 0.1 0.01 0.1 10 1 Drain Source Voltage VDS (V) (A) –25°C 1.8 V 6 1.6 V 4 1.4 V 2 8 6 4 2 80 1.3 A 40 0.5 A 4 6 Gate to Source Voltage Rev.5.00, Jun. 13, 2005, page 3 of 6 8 10 VGS (V) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) ID = 2.5 A 2 0 8 10 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 160 Pulse Test 0 100 25°C Tc = 75°C VDS = 10 V Pulse Test VGS = 1.2 V 120 n Operation in this area is limited by RDS(on) 0.01 Pulse Test 2 4 6 Drain to Source Voltage io Typical Transfer Characteristics 8 0 m s at 10 2.0 V m s 10 0.001 0.001 200 Drain Current ID (A) Drain Current ID 10 V 1 = op er Typical Output Characteristics 4.5 V 2.5 V When using the FR4 board. 1 shot pulse, Ta = 25°C 10 Ambient Temperature Ta (°C) 10 100 µs 1 2 3 Gate to Source Voltage 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 100 2.5 V VGS = 4.5 V 10 0.1 1 10 Drain Current ID 100 (A) Static Drain to Source on State Resistance vs. Temperature 100 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2196C ID = 2.5 A 80 0.5 A VGS = 2.5 V 1.3 A 60 ID = 0.5, 1.3, 2.5 A 40 VGS = 4.5 V 20 0 −25 Pulse Test 0 25 50 75 Case Temperature 100 125 150 Forward Transfer Admittance vs. Drain Current 100 Tc = –25°C 10 1 VDS = 10 V Pulse Test 0.1 0.01 0.03 2 1.6 Gate Charge 2.4 3.2 VGS (V) 300 Ciss 100 Coss 30 Crss 10 0 4.0 VGS = 0 f = 1 MHz 1 0 10 20 Drain to Source Voltage Qg (nC) VDS (V) Switching Characteristics 100 tr VGS = –10 V, VDS = 10 V RG = 4.7 Ω, Ta = 25°C Switching Time t (ns) 5V 6 VGS = 0, –5 V 4 2 Pulse Test 0.4 0.8 1.2 Source to Drain Voltage Rev.5.00, Jun. 13, 2005, page 4 of 6 1.6 10 ID (A) 3 Reverse Drain Current vs. Source to Drain Voltage 8 0 Capacitance C (pF) 4 Gate to Source Voltage VDS (V) Drain to Source Voltage IDR (A) 6 10 10 Reverse Drain Current VDD = 20 V 10 V 5V 0.8 3 1 1000 8 20 0 0.3 Typical Capacitance vs. Drain to Source Voltage 40 VDD = 20 V 10 V 5V 0.1 Drain Current Tc (°C) Dynamic Input Characteristics 30 75°C 25°C 2.0 VSD (V) td(off) td(on) 10 tf 1 0.1 0.3 1 Drain Current 3 ID (A) 10 HAT2196C Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 4.7 Vin 4.5 V V DD = 10 V Vout 10% 10% 90% td(on) Rev.5.00, Jun. 13, 2005, page 5 of 6 tr 10% 90% td(off) tf HAT2196C Package Dimensions JEITA Package Code RENESAS Code Package Name PWSF0006JA-A MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g D A e c E A HE A x M LP L S b A Reference Symbol e A2 A A1 y S S e1 b b1 l1 HE L LP x y c1 b2 c Pattern of terminal position areas A-A Section A A1 A2 b b1 c c1 D E e b2 e1 l1 Dimension in Millimeters Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 1.65 0.5 Ordering Information Part Name HAT2196C-EL-E Quantity 3000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00, Jun. 13, 2005, page 6 of 6 Sales Strategic Planning Div. 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