RENESAS HAT3008R

HAT3008R, HAT3008RJ
Silicon N / P Channel Power MOS FET
High Speed Power Switching
REJ03G1198-0400
(Previous: ADE-208-536B)
Rev.4.00
Sep 07, 2005
Features
•
•
•
•
For Automotive Application (at Type Code “J”)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
65
87
2
G
12
5 6
D D
4
G
1, 3
2, 4
5, 6, 7, 8
34
S1
Nch
Rev.4.00 Sep 07, 2005 page 1 of 11
S3
Pch
Source
Gate
Drain
HAT3008R, HAT3008RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Value
Symbol
Unit
Nch
Pch
VDSS
VGSS
60
±20
–60
±20
V
V
ID
Note 1
ID (pulse)
5
40
–3.5
–28
A
A
IDR
Note 4
IAP
5
—
–3.5
—
A
—
EAR
Note 4
5
—
–3.5
—
A
—
Channel dissipation
Pch
Note 2
2.14
2
1.05
2
mJ
W
Channel dissipation
Channel temperature
Pch
Tch
3
150
3
150
W
°C
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT3008R
HAT3008RJ
HAT3008R
Avalanche energy
HAT3008RJ
Note 3
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
°C
Electrical Characteristics
N Channel
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
60
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IGSS
IDSS
—
—
—
—
±10
1
µA
µA
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
IDSS
IDSS
—
—
—
—
0.1
—
µA
µA
IDSS
VGS (off)
—
1.2
—
—
10
2.2
µA
V
VDS = 10 V, ID = 1 mA
RDS (on)
RDS (on)
—
—
0.043
0.056
0.058
0.084
Ω
Ω
ID = 3 A, VGS = 10 V
Note 5
ID = 3 A, VGS = 4 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
6
—
9
520
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
270
100
—
—
pF
pF
ID = 3 A, VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
11
40
—
—
ns
ns
VGS = 10 V, ID = 3 A
VDD ≅ 30 V
Turn-off delay time
Fall time
td (off)
tf
—
—
110
80
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.84
40
1.1
—
V
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain
HAT3008R
current
HAT3008RJ
Zero gate voltage drain
HAT3008R
current
HAT3008RJ
Gate to source cutoff voltage
Static drain to source on state resistance
Note:
5. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 11
Test Conditions
VDS = 48 V, VGS = 0
Ta = 125°C
Note 5
IF = 5 A, VGS = 0
IF = 5 A, VGS = 0
diF/dt = 50 A/µs
Note 5
Note 5
HAT3008R, HAT3008RJ
P Channel
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
–60
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
Zero gate voltage drain
current
HAT3008R
HAT3008RJ
IDSS
IDSS
—
—
—
—
–1
–0.1
µA
µA
VDS = –60 V, VGS = 0
Zero gate voltage drain
current
HAT3008R
HAT3008RJ
IDSS
IDSS
—
—
—
—
—
–10
µA
µA
VDS = –48 V, VGS = 0
Ta = 125°C
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
–1.2
—
—
0.12
–2.2
0.15
V
Ω
VDS = –10 V, ID = –1 mA
Note 6
ID = –2 A, VGS = –10 V
Forward transfer admittance
RDS (on)
|yfs|
—
3
0.16
4.5
0.23
—
Ω
S
ID = –2 A, VGS = –4 V
Note 6
ID = –2 A, VDS = –10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
600
290
—
—
pF
pF
Reverse transfer capacitance
Turn-on delay time
Crss
td (on)
—
—
75
11
—
—
pF
ns
VDS = –10 V
VGS = 0
f = 1 MHz
tr
30
100
—
—
ns
ns
Rise time
Turn-off delay time
td (off)
—
—
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
55
–0.98
—
–1.28
ns
V
trr
—
70
—
ns
Body-drain diode reverse recovery time
Note:
6. Pulse test
Rev.4.00 Sep 07, 2005 page 3 of 11
Note 6
VGS = –10 V, ID = –2 A
VDD ≅ –30 V
IF = –3.5 A, VGS = 0
IF = –3.5 A, VGS = 0
diF/dt = 50 A/µs
Note 6
HAT3008R, HAT3008RJ
Main Characteristics
N Channel
Maximum Safe Operation Area
Power vs. Temperature Derating
100
3.0
ive
ive
Op
er
ion
at
1.0
Dr
er
Op
1
0
Drain Current
Dr
2.0
0
50
at
ion
10 µs
30
ID (A)
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2
Channel Dissipation
Pch (W)
4.0
10
10
3
1
0.3
0.1
Ambient Temperature
0.01
0.1
200
150
s
Ta = 25°C
1 shot Pulse
0.3
1
3
10
Drain to Source Voltage
Ta (°C)
0µ
s
=1
0m
Op
s
er
(1
at
sh
ion
ot)
(
P
Operation in
W
N
≤ 1 ot
this area is
0 e7
s)
limited by RDS (on)
DC
0.03
100
1m
PW
30
100
VDS (V)
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
10 V
4V
3.5 V
(A)
3V
VDS = 10 V
Pulse Test
8
ID
8
10
Pulse Test
6
6
4
2.5 V
2
Drain Current
Drain Current
ID
(A)
10
4
25°C
Tc = 75°C
2
–25°C
VGS = 2 V
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
0.4
0.3
ID = 5 A
0.2
2A
0.1
1A
0
0
4
8
12
Gate to Source Voltage
Rev.4.00 Sep 07, 2005 page 4 of 11
16
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
VDS (V)
0.5
1
1.0
Pulse Test
0.5
0.2
0.1
VGS = 4 V
0.05
10 V
0.02
0.01
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAT3008R, HAT3008RJ
0.20
Pulse Test
0.16
0.12
1 A, 2 A
ID = 5 A
VGS = 4 V
0.08
0.04
1 A, 2 A, 5 A
10 V
0
–40
0
40
80
Case Temperature
120
Tc
160
50
20
Tc = –25°C
10
5
25°C
2
75°C
1
VDS = 10 V
Pulse Test
0.5
0.1
2
5
10
2000
1000
Capacitance C (pF)
200
100
50
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
0.5
1
2
5
Crss
50
VGS = 0
f = 1 MHz
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VGS
VDS
12
VDD = 10 V
25 V
50 V
40
20
8
4
VDD = 50 V
25 V
10 V
0
8
16
Gate Charge
Rev.4.00 Sep 07, 2005 page 5 of 11
24
0
32
Qg (nc)
40
1000
Switching Time t (ns)
16
VGS (V)
Reverse Drain Current IDR (A)
80
0
Coss
100
10
ID = 5 A
60
200
10
0.2
20
100
Ciss
500
20
Gate to Source Voltage
Reverse Recovery Time trr (ns)
1
Typical Capacitance vs.
Drain to Source Voltage
500
5
0.1
VDS (V)
0.5
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
0.2
300
td(off)
100
tf
30
tr
td(on)
10
3
1
0.1
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
0.2
0.5
1
Drain Current
2
ID (A)
5
10
HAT3008R, HAT3008RJ
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IDR (A)
10
8
10 V
6
5V
VGS = 0, –5 V
4
2
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
2.5
IAP = 5 A
VDD = 25 V
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
2.0
1.5
1.0
0.5
0
25
50
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Avalanche Test Circuit
Avalanche Waveform
L
VDS
Monitor
75
1
• L • IAP2 •
2
EAR =
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDD
D.U.T
VDS
ID
Vin
15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
10 V
50 Ω
VDD
= 30 V
10%
90%
td(on)
Rev.4.00 Sep 07, 2005 page 6 of 11
10%
tr
90%
td(off)
tf
HAT3008R, HAT3008RJ
P Channel
Power vs. Temperature Derating
Dr
1.0
ive
Op
er
ion
at
er
Op
1
ive
Dr
2.0
at
ion
50
100
150
Ambient Temperature
10
200
0µ
s
1m
s
–10
–3
PW
=
10
Op
ms
era
tio
n(
Operation in
PW N
o
≤ 1 te 8
this area is
0s
limited by RDS (on)
)
DC
–1
–0.3
–0.1
–0.03 Ta = 25°C
1 shot pulse
–0.01
–1
–0.1 –0.3
0
0
10 µs
–30
Drain Current
3.0
–100
ID (A)
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2
Channel Dissipation
Pch (W)
4.0
Maximum Safe Operation Area
–3
–10
–30
–100
Drain to Source Voltage VDS (V)
Ta (°C)
Note 8:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
–10
–10 V
–5 V
–4 V
–8
–3.5 V
Pulse Test
ID (A)
ID (A)
–10
–3 V
–4
–2
VGS = –2.5 V
0
–2
–4
–6
–8
Drain to Source Voltage
–0.3
ID = –2 A
–0.2
–1 A
–0.5 A
–4
–8
–12
Gate to Source Voltage
Rev.4.00 Sep 07, 2005 page 7 of 11
–16
–20
VGS (V)
–1
–2
–3
–4
Gate to Source Voltage
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
–0.4
0
–2
VDS (V)
Pulse Test
–0.1
25°C
Tc = 75°C
0
0
–10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
–4
–25°C
0
0
–8
–6
Drain Current
Drain Current
–6
VDS = 10 V
Pulse Test
1
Pulse Test
0.5
VGS = –4 V
0.2
0.1
–10 V
0.05
0.02
0.01
–0.1 –0.3
–1
–3
Drain Current
–10
–30
ID (A)
–100
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAT3008R, HAT3008RJ
0.5
Pulse Test
0.4
ID = –2 A
–1 A
0.3
–0.5 A
VGS = –4 V
0.2
–2 A
0.1
–0.5 A, –1 A
–10 V
0
–40
0
40
80
Case Temperature
120
160
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
VDS = 10 V
Pulse Test
0.2
–0.1 –0.2
Tc (°C)
–5
–10
2000
VGS = 0
f = 1 MHz
1000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
–2
Typical Capacitance vs.
Drain to Source Voltage
500
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
5
–0.1 –0.2
Ciss
500
100
50
–1
–2
–5
0
–10
–8
VGS
VDS
–12
VDD = –50 V
–25 V
–10 V
–80
–16
–100
0
8
16
Gate Charge
Rev.4.00 Sep 07, 2005 page 8 of 11
24
32
Qg (nc)
–30
–40
–50
–20
40
1000
Switching Time t (ns)
–4
VGS (V)
ID = –3.5 A
Gate to Source Voltage
–40
–20
Switching Characteristics
0
VDD = –10 V
–25 V
–50 V
–10
Drain to Source Voltage VDS (V)
IDR (A)
0
–60
Crss
20
Dynamic Input Characteristics
–20
Coss
200
10
–0.5
Reverse Drain Current
VDS (V)
–1
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
–0.5
300
td(off)
100
tf
30
tr
td(on)
10
3 V = –10 V, V = –30 V
GS
DD
PW = 5 µs, duty ≤ 1 %
1
–0.1 –0.2
–0.5 –1
–2
Drain Current
ID (A)
–5
–10
HAT3008R, HAT3008RJ
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IDR (A)
–10
–8
–6
10 V
VGS = 0, 5 V
–4
5V
–2
Pulse Test
0
0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage
–2.0
2.5
IAP = –3.5 A
VDD = –25 V
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
2.0
1.5
1.0
0.5
0
25
50
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Avalanche Test Circuit
Avalanche Waveform
L
VDS
Monitor
75
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDD
D.U.T
VDS
ID
Vin
–15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –30 V
Vout
td(on)
Rev.4.00 Sep 07, 2005 page 9 of 11
10%
10%
tr
td(off)
tf
HAT3008R, HAT3008RJ
Common
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.001
0.02
0.01
1s
ho
0.0001
10 µ
t
ls
pu
D=
PDM
e
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.001
0.0001
10 µ
D=
PDM
e
uls
tp
ho
1s
100 µ
PW
T
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.4.00 Sep 07, 2005 page 10 of 11
PW
T
10
100
1000
10000
HAT3008R, HAT3008RJ
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
HAT3008R-EL-E
HAT3008RJ-EL-E
Quantity
2500 pcs
2500 pcs
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 11 of 11
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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