IL201/IL202/IL203 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, Low Input Current, with Base Connection FEATURES • Guaranteed at IF = 1.0 mA • High collector emitter voltage, BVCEO = 70 V • Long term stability A 1 6 B C 2 5 C • Lead (Pb)-free component NC 3 4 E • Component in accordance to 2002/95/EC and WEEE 2002/96/EC • Industry standard DIP package RoHS i179004 AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection DESCRIPTION The IL201/IL202/IL203 are optically coupled pairs employing a gallium arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL201/IL202/IL203 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. • DIN EN 60747-5-5 available with option 1 • BSI IEC 60950; IEC 60065 ORDER INFORMATION PART REMARKS IL201 CTR 75 to 150 %, DIP-6 IL202 CTR 125 to 250 %, DIP-6 IL203 CTR 225 to 450 %, DIP-6 IL203-X007 CTR 225 to 450 %, SMD-6 (option 7) IL203-X009 CTR 225 to 450 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR IF Pdiss 6.0 60 100 1.33 V mA mW mW/°C BVCEO BVECO BVCBO Pdiss 70 7.0 70 200 2.6 V V V mW mW/°C INPUT Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 25 °C OUTPUT Collector emitter breakdown voltage Emitter collector breakdown voltage Collector base breakdown voltage Power dissipation Derate linearly from 25 °C www.vishay.com 308 For technical questions, contact: [email protected] Document Number: 83613 Rev. 1.5, 08-May-08 IL201/IL202/IL203 Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current, Low Input Current, with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT t = 1.0 s VISO 5300 VRMS Ptot 250 mW 3.3 ≥ 7.0 mW/°C mm COUPLER Isolation test voltage Total package dissipation (LED and detector) Derate linearly from 25 °C Creepage distance ≥ 7.0 mm Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C 10 s Clearance distance ≤ 260 °C Lead soldering time Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT V INPUT IF = 20 mA VF 1.2 1.5 IF = 1.0 mA VF 1.0 1.2 Breakdown voltage IR = 10 µA VF Reverse current VR = 6.0 V IR Forward voltage 6.0 V 20 V 0.1 10 µA OUTPUT VCE = 5.0 V, IC = 100 µA hFE 100 Collector emitter breakdown voltage IC = 100 µA BVCEO 70 Emitter collector breakdown voltage IE = 100 µA BVECO 7.0 Collector base breakdown voltage IC = 10 µA BVCBO 70 Leakage current collector emitter VCE = 10 V, TA = 25 °C ICEO DC forward current gain 200 V 10 V 90 V 5.0 50 nA Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION Current transfer ratio (collector to base) SYMBOL MIN. IF = 10 mA, VCB = 10 V CTRCB 15 IF = 10 mA, IC = 2.0 mA CTRCB IF = 10 mA, VCB = 10 V DC current transfer ratio IF = 1.0 mA, VCE = 10 V Document Number: 83613 Rev. 1.5, 08-May-08 PART TYP. MAX. UNIT % 40 % IL201 CTRDC 75 100 150 % IL202 CTRDC 125 200 250 % IL203 CTRDC 225 300 450 IL201 CTRDC 10 % IL202 CTRDC 30 % IL203 CTRDC 50 % For technical questions, contact: [email protected] % www.vishay.com 309 IL201/IL202/IL203 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, Low Input Current, with Base Connection TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.5 1.3 NCTR - Normalized CTR VF - Forward Voltage (V) 1.4 TA = - 55 °C 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 100 °C 0.8 1 10 NCTR(SAT) 0.1 1 10 100 IF - LED Current (mA) iil201_04 Fig. 1 - Forward Voltage vs. Forward Current Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current 1.5 1.5 Normalized to: VCE = 10 V, IF = 10 mA TA = 25 °C CTRce(sat) VCE = 0.4 V 1.0 0.5 NCTR(SAT) NCTR NCTR - Normalized CTR NCTR - Normalized CTR 0.5 100 IF - Forward Current (mA) iil201_01 0.0 0.1 1 10 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRce(sat) VCE = 0.4 V 1.0 TA = 85 °C 0.5 NCTR(SAT) NCTR 0.0 0.1 100 I F - LED Current (mA) iil201_02 1 10 100 IF - LED Current (mA) iil201_05 Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. LED Current Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. LED Current 1.5 35 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRce(sat) VCE = 0.4 V 1.0 TA = 50 °C 0.5 NCTR(SAT) NCTR I CE - Collector Current (mA) NCTR - Normalized CTR CTRce(sat) VCE = 0.4 V TA = 70 °C 0.0 0.1 30 25 50 °C 20 70 °C 25 °C 15 85 °C 10 5 0 0.0 0.1 iil201_03 1 10 0 100 IF - LED Current (mA) Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current www.vishay.com 310 1.0 NCTR 0.7 0V Normalized to: VCE = 10 V, IF = 10 mA TA = 25 °C iil201_06 10 20 30 40 50 60 IF - LED Current (mA) Fig. 6 - Collector Emitter Current vs. Temperature and LED Current For technical questions, contact: [email protected] Document Number: 83613 Rev. 1.5, 08-May-08 IL201/IL202/IL203 Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current, Low Input Current, with Base Connection 10 3 10 10 2 VCE = 10 V 101 Typical 10 0 -1 10 10-2 - 20 0 20 40 60 80 1 0.1 2.0 1.0 NhFE(sat) - Normalized Saturated hFE Normalized to: IF = 10 mA Vcb = 9.3 V Ta = 25 °C 0.5 25 °C 50 °C 70 °C 100 10 Fig. 10 - Normalized Photocurrent vs. IF and Temperature 1.5 NCTRcb - Normalized CTRcb 1 IF - LED Current (mA) iil201_10 Fig. 7 - Collector Emitter Leakage Current vs.Temperature 70 °C 50 °C 1.5 25 °C Normalized to: Ib = 20 µA VCE = 10 V Ta = 25 °C 1.0 VCE = 0.4 V 0.5 0.0 0.0 0.1 1 10 1 100 Fig. 8 - Normalized CTRcb vs. LED Current and Temperature 100 1000 Fig. 11 - Normalized Saturated hFE vs. Base Current and Temperature 1000 1000 tpLH - Propagation Delay (µs) 100 10 Ib - Base Current (µA) iil201_11 IF - LED Current (mA) iil201_08 Icb - Collector Base Photocurrent (µA) NIB-Ta = - 20 °C NIb,Ta = 25 °C NIb,Ta = 50 °C NIb,Ta = 70 °C 0.01 0.1 100 TA - Ambient Temperature (°C) iil201_07 Normalized to: IF = 10 mA, Ta = 25 °C Ta = 25 °C Icb = 1.0357 * IF ^ 1.3631 10 1 0.1 0.01 0.1 iil201_09 1 10 100 IF - LED Current (mA) Fig. 9 - Collector Base Photocurrent vs. LED Current Document Number: 83613 Rev. 1.5, 08-May-08 2.5 Ta = 25 °C, IF = 10 mA VCC = 5 V, Vth = 1.5 V 100 tpHL 2.0 1.5 10 tpLH 1 0.1 iil201_11 1 tpHL - Propagation Delay (µs) 10 4 Normalized Photocurrent I CEO - Collector-Emitter (nA) 105 1.0 100 10 RL - Collector Load Resistor (kΩ) Fig. 12 - Propagation Delay vs. Collector Load Resistor For technical questions, contact: [email protected] www.vishay.com 311 IL201/IL202/IL203 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, Low Input Current, with Base Connection 1.2 Normalized to: Ta = 25 °C VCE = 5 V IF = 1 mA 1.5 70 °C VCE = 5 V NhFE - Normalized hFE NCTRCE - Normalized CTRCE 2.0 1.0 0.1 VCE = 0.4 V 1.0 0.1 iil201_13 10 1 25 °C - 20 °C 0.8 0.6 0.4 0.0 100 1 10 Fig. 13 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current 100 1000 Ib - Base Current (µA) iil201_14 IF - LED Current (mA) Normalized to: Ib = 20 µA VCE = 10 V Ta = 25 °C 50 °C Fig. 14 - Normalized Non-Saturated hFE vs. Base Current and Temperature PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.300 (7.62) (0.45) 0.048 0.039 (1.00) min. typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18° 4° typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.035 (0.90) 0.022 (0.55) 0.100 (2.54) typ. 0.130 (3.0) 3° to 9° 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) i178004 Option 7 Option 9 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) typ. 0.300 (7.62) ref. 0.028 (0.7) 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.331 (8.4) min. 0.406 (10.3) max. www.vishay.com 312 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30) typ. 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min. 15° max. For technical questions, contact: [email protected] 18494 Document Number: 83613 Rev. 1.5, 08-May-08 IL201/IL202/IL203 Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current, Low Input Current, with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1