Advance Technical Information IXBN 75N170A VCES IC25 VCE(sat) tfi BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C 42 A ICM TC = 25°C, 1 ms 240 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load 100 1350 A V TSC (SCSOA) VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 10 Ω non repetitive 10 µs PC TC = 25°C ICM = VCES = 500 150 °C Tstg -55 ... +150 °C Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight miniBLOC, SOT-227 B (IXBN) E153432 E G E C G = Gate E = Emitter Either Source terminal at miniBLOC can be used as Main or Kelvin Emitter 30 g Features z z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 1500 µA, VCE = VGE BVCES VGE(th) IC IC ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved 1700 2.5 TJ = 25°C TJ = 125°C TJ = 125°C 4.5 5.0 C = Collector °C TJM Md V A V ns W -55 ... +150 TJ = 1700 = 75 = 6.0 = 60 High Blocking Voltage Fast switching High current handling capability MOS Gate turn-on - drive simplicity Isolation voltage 2500V Applications z z z 5.5 V V 50 1.5 µA mA ±200 nA z 6.0 V V z z AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Substitutes for high voltage MOSFETs Advantages z z Lower conduction losses than MOSFETs High power density Easy to mount with 2 screws Space saving 98938 (7/02) IXBN 75N170A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 50 S 7400 pF 340 pF Cres 90 pF Qg 310 nC 60 nC 110 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC 30 = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 td(on) Inductive load, TJ = 25°°C 35 ns tri IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Ω 60 ns 240 ns E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 60 ns G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 6.0 mJ J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 35 ns L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 60 ns N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 10 mJ P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 280 ns R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 120 ns T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 12 mJ td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 0.2 K/W RthJC RthCK 0.05 Reverse Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF t = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% IRM t rr IF vR = 25A, VGE = 0 V, -diF/dt = 50 A/us = 100V 5.0 15 330 V A ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1