Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 20N60Q IXFT 20N60Q VDSS ID25 = = = RDS(on) Q-Class 600 V 20 A 0.35 W trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 20 A IDM TC = 25°C, pulse width limited by TJM 80 A IAR TC = 25°C 20 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.5 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight G W -55 ... +150 150 -55 ... +150 °C °C °C G = Gate S = Source 300 °C Features TO-247 AD TO-268 6 4 g g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 mA 600 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4 V ±100 nA TJ = 25°C TJ = 125°C 25 1 mA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.35 W IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved TO-268 (IXFT) Case Style 300 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) (TAB) S TC = 25°C TL TO-247 AD (IXFH) (TAB) D = Drain TAB = Drain • IXYS advanced low gate charge process • International standard packages • Low gate charge and capacitance - easier to drive - faster switching • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space savings • High power density 98549A (6/99) 1-2 IXFH 20N60Q IXFT 20N60Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 10 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 24 S 3700 pF 400 pF 90 pF TO-247 AD (IXFH) Outline 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 ns td(off) RG = 1.5 W (External) 45 ns 20 ns 95 nC 25 nC 45 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 20 A ISM Repetitive; pulse width limited by TJM 80 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A t rr QRM IRM IF = IS, -di/dt = 100 A/ms, VR = 100 V TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved 0.85 8 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2