ETC IXFH20N60Q

Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFH 20N60Q
IXFT 20N60Q
VDSS
ID25
=
=
=
RDS(on)
Q-Class
600 V
20 A
0.35 W
trr £ 250ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Gate Charge and Capacitances
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
600
600
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
20
A
IDM
TC = 25°C, pulse width limited by TJM
80
A
IAR
TC = 25°C
20
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.5
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
Maximum Ratings
TJ
TJM
Tstg
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
G
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source
300
°C
Features
TO-247 AD
TO-268
6
4
g
g
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 mA
600
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
4
V
±100
nA
TJ = 25°C
TJ = 125°C
25
1
mA
mA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.35
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
TO-268 (IXFT) Case Style
300
1.13/10 Nm/lb.in.
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
(TAB)
S
TC = 25°C
TL
TO-247 AD (IXFH)
(TAB)
D = Drain
TAB = Drain
• IXYS advanced low gate charge
process
• International standard packages
• Low gate charge and capacitance
- easier to drive
- faster switching
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
98549A (6/99)
1-2
IXFH 20N60Q
IXFT 20N60Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
10
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
24
S
3700
pF
400
pF
90
pF
TO-247 AD (IXFH) Outline
20
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
20
ns
td(off)
RG = 1.5 W (External)
45
ns
20
ns
95
nC
25
nC
45
nC
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
K/W
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.42
(TO-247)
Source-Drain Diode
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
20
A
ISM
Repetitive; pulse width limited by TJM
80
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
250
ns
mC
A
t rr
QRM
IRM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
TO-268AA (D3 PAK)
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
0.85
8
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim. Millimeter
Min. Max.
Inches
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2