SEMICONDUCTOR KDP610UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. TENTATIVE FEATURES Array type (4 Diode in one package) Low Capacitance A Low Series resistance D 4 B E 1 8 C 5 BOTTOM VIEW TOP VIEW MAXIMUM RATING (Ta=25 ) RATING UNIT Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range DIM A B C D E F G F SYMBOL G CHARACTERISTIC SIDE VIEW MILLIMETERS _ 0.05 1.80 + _ 0.05 1.20 + _ 0.05 0.20 + _ 0.05 0.40 + _ 0.05 0.25 + _ 0.05 0.45 + Max 0.5 ULP-8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR=30V - - 0.1 A Forward Voltage VF IF=10mA - - 1.0 V Total Capacitance CT VR=1V, f=1MHz - - 0.30 pF Series Resistance rs IF=10mA, f=100MHz - - 1.3 ESD-Capability * - C=200pF, R=0 , Both forward and reverse 100 - - direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. 2008. 1. 22 Revision No : 0 1/2 KDP610UL 2008. 1. 22 Revision No : 0 2/2