SEMICONDUCTOR KDR511T TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE HIGH FREQUENCY RECTIFICATION. SWITCHING REGULATORS, CONVERTERS, CHOPPERS. E FEATURES B K K DIM A B Low Forward Voltage : VF max=0.4V. RATING UNIT VRRM 15 V Reverse Voltage VR 15 V Average Forward Current IO 1 A Non-Repetitive Peak Surge Current IFSM 10 Tj 125 Tstg -55 125 Junction Temperature Storage Temperature Range A D G F 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + E F G H I J K L L SYMBOL Repetitive Peak Reverse Voltage D ) C CHARACTERISTIC 1 C 3 I MAXIMUM RATING (Ta=25 2 G A Low Leakage Current : IR max=500 A. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H J 2 1. NC 2. ANODE 3 3. CATHODE 1 TSM Marking Type Name Lot No. T1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IF=0.5A - 0.30 0.35 V IF=1A - 0.35 0.40 V VR=10V - - 500 VR=15V - - 1000 Forward Voltage VF Reverse Current IR Total Capacitance CT VR=10V, f=1MHz - 42 - pF Reverse Recovery Time trr IF=IR=100mA - - 15 nS 2003. 8. 4 Revision No : 1 A 1/2 KDR511T I R - VR IF - V F 100 REVERSE CURRENT I R (mA) Ta =1 25 C =1 T a 00 Ta =75 C = Ta 50 C =2 C 5 C 1 Ta FORWARD CURRENT I F (A) 3 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 Ta=125 C Ta=100 C 10 Ta=75 C 1 Ta=50 C Ta=25 C 0.1 0.01 0 5 10 15 REVERSE VOLTAGE V R (V) FORWARD VOLTAGE VF (V) INTERTERMINAL CAPACITANCE C (pF) C - VR 10 3 10 2 f=1MHz 10 1 3 5 10 30 REVERSE VOLTAGE VR (V) 2003. 8. 4 Revision No : 1 2/2