IC IC SMD Type P-Channel 1.8-V (G-S) MOSFET KI4433DY Features TrenchFET Power MOSFETS Fast Switching 100% Rg Tested Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current Maximum Power Dissipation * IS TA = 25 PD -2.9 -2.8 -2.1 A -2.1 -1.2 A 2.5 1.4 -10 W 1.3 TA = 85 Operating Junction and Storage Temperature Range V -3.9 IDM Continuous Source Current * Unit -55 to 150 TJ, Tstg * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Symbol t 10 sec RthJA Steady State Maximum Junction-to-Foot(Drain) Steady State RthJF Typical Maximum 40 50 75 90 19 25 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI4433DY Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain-Source On-State Resistance rDS(on) Testconditons VDS = VGS, ID = -250 VDS = 0 V, VGS = Min Typ -0.45 A -1.0 8V 100 VDS = -20 V, VGS = 0 V -1 -5 VDS =-20 V, VGS = 0 V, TJ =85 -10 - 5 V, VGS =- 4.5 V 0.095 0.110 VGS = -2.5 V, ID = -2.2A 0.137 0.160 VGS = -1.8V, ID = -1 A 0.205 0.24 gfs VDS = -10 V, ID = -2.7 A Schottky Diode Forward Voltage * VSD IS = -0.9A, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 7 VDS = -10 V, VGS = -4.5 V, ID = -2.7A tr Turn-Off Delay Time td(off) A A -0.8 -1.2 V 5.1 7.7 nC nC 1.0 nC 6 9.7 16 25 ns VDD = -10 V, RL = 10 30 45 ns ID = -1 A, VGEN = -4.5 V, RG = 6 30 45 ns td(on) Rise Time V nA S 1.2 3 Unit A VGS = -4.5 V, ID = -2.7 A Forward Transconductance * Turn-On Delay Time Fall Time tf 27 40 ns Source-Drain Reverse Recovery Time trr 20 40 ns * Pulse test; pulse width 2 VDS Max www.kexin.com.cn 300 s, duty cycle IF = -0.9 A, di/dt = 100 A/ 2%. s