SEMICONDUCTOR KMB8D2N60QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. H T P D L G FEATURES A VDSS=60V, ID=8.2A. Drain-Source ON Resistance. RDS(ON)=22m (Max.) @ VGS=10V 8 5 RDS(ON)=27m (Max.) @ VGS=4.5V B1 B2 Super High Dense Cell Design 1 MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING Drain Source Voltage VDSS Gate Source Voltage VGSS DC@TA=25 Drain Current 60 V V 25 8.2 A 6.6 A I D* DC@TA=70 IDP 40 A Drain Source Diode Forward Current IS 3.0 A 3.0 W 2.0 W TA=25 MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 UNIT Pulsed Drain Power Dissipation 4 DIM A B1 B2 D G H L P T FLP-8 PD* TA=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Tj 150 Tstg -55~150 RthJA* 41 KMB8D2N 60QA /W Note : *Surface Mounted on 1 1 FR4 Board PIN CONNECTION (TOP VIEW) S 1 8 D S 2 7 D S 3 6 D G 4 5 D 2007. 9. 3 Revision No : 1 1 8 2 7 3 6 4 5 1/4 KMB8D2N60QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 60 - - V VDS=48V, VGS=0V - - 1 VDS=48V, VGS=0V, Tj=70 - - 5 - - 100 Static Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250 A IDSS Drain Cut-off Current A Gate Leakage Current IGSS VGS= Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 VGS=10V, ID=8.2A - 16 22 VGS=4.5V, ID=7.6A - 20 27 VDS=5V, ID=8.2A - 2.4 - - 1920 2300 - 155 - - 116 - - 47.6 58 - 24.2 30 20V, VDS=0V RDS(ON)* Drain-Source ON Resistance Gfs* Forward Transconductance nA V m S Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss VDS=30V, VGS=0V, f=1MHz Total Gate Charge (VGS=10V) pF Qg* Total Gate Charge (VGS=4.5V) VDS=30V, VGS=10V, ID=8.2A nC Gate-Source Charge Qgs* - 6.0 - Gate-Drain Charge Qgd* - 14.4 - Turn-On Delay Time td(on)* - 8.2 - VDD=30V, VGS=10V - 5.5 - RL=3.6 , RG=3 - 29.7 - - 5.2 - - 0.74 1.0 tr* Turn-On Rise Time ns td(off)* Turn-On Delay Time tf* Turn-On Fall Time Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage VGS=0V, IDR=1.7A, V Note 1. Pulse Test : Pulse width 2007. 9. 3 10 , Duty cycle Revision No : 1 1% 2/4 KMB8D2N60QA Fig2. RDS(ON) - ID Fig1. ID - VDS 50 40 VGS=5.5V VGS=4.0V 20 10 VGS=3.5V 0 0 40 30 VGS=4.5V 20 VGS=10V 10 8 12 16 20 0 10 20 30 Drain - Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS Fig4. RDS(ON) - Tj 40 50 60 40 Drain Current ID (A) Common Source Ta=25 C Pulse Test 0 4 Common Source VDS=5V Pulse Test On-Resistance RDS(ON) (mΩ) Drain Current ID (A) VGS=6V 30 On-Resistance RDS(ON) (mΩ) Common Source Ta=25 C Pulse Test VGS=8V, 10V 30 20 10 150 C 25 C Common Source VGS=10V Pulse Test 50 40 30 20 10 -55 C 0 -75 -50 -25 0 1 2 3 4 0 25 50 75 100 125 150 175 Gate Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Fig 6. IS - VSDF 5 40 Common Source VGS=VDS ID=250µA Pulse Test 4 3 2 1 0 -75 -50 -25 Common Source Ta=25 C Pulse Test 30 20 10 0 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C) 2007. 9. 3 5 Drain Current ID (A) Gate Threshold Voltage Vth (V) 0 Revision No : 1 0 0.4 0.8 1.2 1.6 2.0 Source-Drain Forward Voltage VSDF (V) 3/4 KMB8D2N60QA Fig7. VGS - Qg Fig8. C - VDS 3500 VDS=30V f=1MHz 3000 ID=8.2A 8 Capacitance C (pF) Gate to Source Voltage VGS (V) 10 6 4 2500 Ciss 2000 1500 1000 2 Coss Crss 500 0 0 0 10 20 30 40 50 0 Gate Charge Qg (nC) 5 10 15 20 25 30 Drain - Source Voltage VDS (V) Fig9. Safe Operation Area 102 Drain Current ID (A) 100µs 101 1ms 10ms 100 10-1 10-2 Operation in this area is limited by RDS(ON) 100ms 1s 10s VGS=10V SINGLE PULSE TA = 25 C 10-2 10-1 DC 100 101 102 Drain - Source Voltage VDS (V) Normalized Effective Transient Thermal Resistance Rth( C/W) Fig10. Transient Thermal Response Curve 100 0.5 0.2 0.1 10-1 0.05 0.02 10-2 PDM 0.01 t1 t2 SINGLE 10-3 10-4 - Duty cycle D = t1/t2 10-3 10-2 10-1 100 10 102 103 Square Wave Pulse Duration (sec) 2007. 9. 3 Revision No : 1 4/4