STMICROELECTRONICS LCDP1511D

LCDP1511D

Application Specific Discretes
A.S.D.TM
DUAL LINE PROGRAMMABLE TRANSIENT
VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
FEATURES
Dualline programmable transient suppressor
Wide negative firing voltage range : VMGL = -80V
Low dynamic switching voltages : VFP and VDGL
Low gate triggering current : IGT = 5mA max
Peak pulse current : IPP = 15 A (10/1000 µs)
Holding current : IH > 150 mA
DESCRIPTION
The LCDP1511D is a dual line protector which protects subscriber line interface circuits (SLIC)
against transient overvoltages.
Positive overvoltages are clamped with diodes towards GND, while negative overvoltages are suppressed by thyristors connected to GND. The
breakdown voltage of the thyristors is determined
by the voltage applied to the gate, generally -Vbat.
SO8
FUNCTIONAL DIAGRAM
TIP 1
1
8
RING 1
GATE
2
7
GND
GATE
3
6
GND
TIP 2
4
5
RING 2
Peak Surge
Voltage
(V)
Voltage
Waveform
(µs)
Current
Waveform
(µs)
Admissible
Ipp
(A)
Necessary
Resistor
(Ω)
ITU-T K20
1000
10/700
5/310
25
-
VDE0433
2000
10/700
5/310
25
40
VDE0878
COMPLIES WITH THE
FOLLOWING STANDARDS:
1500
1.2/50
1/20
40
-
IEC1000-4-5
level 2
level 2
10/700
1.2/50
5/310
8/20
25
25
-
FCC Part 68
1500
800
10/160
10/560
10/160
10/560
30
20
5
BELLCORE NWT-001089-CORE
2500
1000
2/10
10/1000
2/10
10/1000
70
15
25
45
September 1999 - Ed:2A
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LCDP1511D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C).
Symbol
Parameter
Value
Unit
Peak pulse current (see note1)
10/1000µs
5/310µs
2/10µs
15
25
70
A
IFSM
Non repetitive surge peak on-state current
(see note2)
tp = 10ms
tp = 1s
5
3.5
A
VMLG
VMGL
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
80
80
V
- 55 to + 150
°C
260
°C
IPP
Storage temperature range
Tstg
Lead temperature for soldering during 10s
TL
Note 1: Pulse waveform
10 / 1000 µs
5 / 310 µs
2 / 10 µs
tr = 10 µs
tr = 5 µs
tp = 1000 µs
tp = 310 µs
tr = 2 µs
tp = 10 µs
% IPP
100
Note 2 : Maximum current flowing through the 4 wires together.
50
0
tr
t
tp
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient
Value
Unit
170
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
IGT
Gate triggering current
IH
Holding current
IRM
IRG
Reverse leakage current LINE / GND
VRM
Reverse voltage LINE / GND
VGT
VF
VFP
Gate triggering voltage
VDGL
Dynamic switching voltage GATE / LINE
VGATE
VRG
GATE / GND voltage
C
2/6
Reverse leakage current GATE / LINE
VDGL VR
VRM
VF
Forward drop voltage LINE / GND
IRM
IR
Peak forward voltage
IH
Reverse voltage GATE / LINE
Capacitance LINE / GND
IPP
LCDP1511D
PARAMETERS RELATED TO THE DIODE LINE / GND (Tamb = 25°C)
Symbol
Test conditions
Square pulse : tp = 500µs
VF
VFP
(note 1)
10/700µs
1.2/50µs
2/10µs
IF = 1A
1kV
1.5kV
2.5kV
IPP = 10A
IPP = 15A
IPP = 10A
RP = 60Ω
RP = 60Ω
RP = 245Ω
Max
Unit
2
V
5
10
20
V
Max
Unit
5
mA
note 1 : see test circuit for VFP, RP is the protection resistor located on the line card
PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25°C)
Symbol
Test conditions
IGT
VGND / LINE = -48V
IH
VGATE = -48V (see note 2)
VGT
at IGT
IRG
VRG = -75V
VGATE = -48V
VDGL
150
mA
2.5
V
5
µA
7
15
20
V
Max
Unit
5
µA
200
100
pF
(see note 3)
1kV
1.5kV
2.5kV
10/700µs
1.2/50µs
2/10µs
Min
RP = 60Ω
RP = 60Ω
RP =245Ω
IPP = 10A
IPP = 15A
IPP = 10A
note 2 : see functional holding current test circuit
note 3 : See test circuit for VDGL
The oscillations with a time duration lower than 50ns are not taken into account
PARAMETERS RELATED TO LINE / GND (Tamb = 25°C)
Symbol
Test conditions
VGATE / LINE = -1V
IRM
VRM = -75V
VR = -3V F = 1MHz
VR = -48V F = 1MHz
C
Fig. 1: Surge peakcurrent versus overloadduration.
ITSM(A)
IH[Tj] / IH[Tj=25°C]
7
F=50Hz
Tj initial=25°C
6
5
4
3
2
1
t(s)
0
0.01
Fig. 2: Relative variation of holding current versus
junction temperature.
0.10
1.00
10.00
100.00
1000.00
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
Tj(°C)
-20
0
20
40
60
80
100
120
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LCDP1511D
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO-NO GO TEST
R
- VP
VBAT = - 48 V
D.U.T.
Surge generator
This is a GO-NO GO test which allows to confirm the holding current (IH ) level in a functionaltest circuit.
TEST PROCEDURE :
- Adjust the current level at the IH value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : IPP = 15A, 10/1000µs.
- The D.U.T. will come back to the off-state within a duration of 50ms max.
TEST CIRCUIT FOR VFP AND VDGL PARAMETERS
R4
(V is defined in unload condition)
P
TIP
L
R2
RING
R3
VP
R1
C1
C2
G ND
Pulse (µs)
Vp
C1
C2
L
R1
R2
R3
R4
IPP
Rp
tr
tp
(V)
(µF)
(nF)
(µH)
(Ω)
(Ω)
(Ω)
(Ω)
(A)
(Ω)
10
700
1000
20
200
0
50
15
25
25
10
60
1.2
50
1500
1
33
0
76
13
25
25
15
60
2
10
2500
10
0
1.1
1.3
0
3
3
10
245
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LCDP1511D
APPLICATION CIRCUIT: PABX line protection
LCDP1511D
PTC or Fuse
Line 1
-Vbat
RP
Ring relay
protection
Ring
relay
1
SLIC
RP
PTC or Fuse
-Vbat
PTC or Fuse
RP
Line 2
Ring relay
protection
Ring
relay
2
SLIC
RP
PTC or Fuse
APPLICATION CIRCUIT: Line Card protection
LCDP1511D
-Vbat
PTC or Fuse
RP
Line 1
CLP30-200B1
Ring
relay
1
SLIC
RP
PTC or Fuse
-Vbat
PTC or Fuse
RP
Line 2
CLP30-200B1
Ring
relay
2
SLIC
RP
PTC or Fuse
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LCDP1511D
DIMENSIONS
PACKAGE MECHANICAL DATA
SO8 (Plastic)
c1
C
a1
S
1.65
0.065
0.1
0.85 0.025
0.48 0.014
0.033
0.019
b1
b1
0.19
0.25 0.007
0.010
C
c1
0.25
0.50 0.010
45° (typ)
0.020
D
4.8
5.0
0.189
0.197
E
e
e3
5.8
6.2
0.228
0.244
F
L
M
3.8
0.4
M
5
F
1
0.069
0.010
0.65
0.35
D
8
1.75
0.25 0.004
a3
b
E
e3
A
a1
a3
A
e
b
Millimetres
Inches
Min. Typ. Max. Min. Typ. Max.
a2
L
a2
REF.
4
0.50
1.27
3.81
0.050
0.150
4.0 0.15
1.27 0.016
0.6
S
0.157
0.050
0.024
8° (max)
Ordre code
Marking
Package
Weight
Base qty
Delivery mode
LCDP1511D
LCDP15
SO8
0.077 g
100
Tube
LCDP1511DRL
LCDP15
SO8
0.077 g
2500
Tape & reel
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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