MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5053A 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters (inches) OUTLINE DRAWING The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 24±0.3 (0.945±0.012) (0.024±0.006) 0.6±0.15 FEATURES (TARGET) R1.2 Internally matched to 50 (Ω) system High output power P1dB=32W (TYP.) @f=5.05~5.25GHz High power gain GLP=10.0dB (TYP.) @f=5.05~5.25GHz High power added efficiency P.A.E.=33% (TYP.) @f=5.05~5.25GHz Low distortion [item -51] IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L. 20.4±0.2 (0.803±0.008) APPLICATION 5.05~5.25GHz band amplifiers 16.7 (0.658) QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=8A RG=25Ω Refer to Bias Procedure GF-38 ABSOLUTE MAXIMUM RATINGS Symbol (1) GATE (2) Source (FLANGE) (3) DRAIN < Keep safety first in your circuit designs! > Parameter Ratings Unit Mitsubishi Electric Corporation puts the maximum effort into VGDO Gate to drain voltage -15 V VGSO Gate to source voltage -15 V ID Drain current 20 A IGR Reverse gate current -80 mA IGF Forward gate current 168 mA PT Total power dissipation 150 W Tch Channel temperature 175 °C -65 ~ +175 °C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal *1 Tstg Storage temperature *1 : Tc=25°C injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol Test conditions Parameter Limits Min. Typ. Max Unit IDSS Saturated drain current VDS=3V, IGS=0V — 24 — V Gm Transconductance VDS=3V, ID=8V — 8 — S VGS (off) Gate to Source cut-off voltage VDS=3V, ID=160mA -2 — -5 V P1dB Output power at 1dB gain compression 44 45 — dBm GLP Linear power gain 9 9.5 — dB P.A.E. Power added efficiency — 34 — % IM3 *2 Rth (ch-c) 3rd order IM distortion Thermal resistance -42 — -45 0.8 — 1.0 dBc °C/W VDS=10V, ID=8A, f=5.05~5.25GHz *1 ∆Vf method *1 : Channel to case *2 : Item-51,2tone test, Po=34.5dBm Single Carrier Level, f=5.05, 5.15, 5.25GHz, Delta f=5MHz MITSUBISHI ELECTRIC