MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127 Complement to MJD122 D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Equivalent Circuit Parameter Collector-Base Voltage Value - 100 Units V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) ICP Collector Current (Pulse) VCBO -8 A - 16 A IB Base Current - 120 mA PC Collector Dissipation (TC=25°C) 20 W Collector Dissipation (Ta=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C C B R1 R2 R 1 ≅ 8 kΩ R 2 ≅ 0.12 k Ω E Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage Test Condition IC = - 30mA, IB = 0 ICEO Collector Cut-off Current ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE *DC Current Gain VCE = - 4V, IC = - 4A VCE = - 4V, VEB = -8A VCE(sat) *Collector-Emitter Saturation Voltage IC = - 4A, IB = - 16mA IC = - 8A, IB = - 80mA Min. - 100 Max. Units V VCE = - 50V, IB = 0 - 10 µA VCB = - 100V, IE = 0 - 10 µA -2 mA 1000 100 12K -2 -4 V V V VBE(sat) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 80mA - 4.5 VBE(on) *Base-Emitter ON Voltage VCE = -4V, IC = - 4A - 2.8 V Cob Output Capacitance VCB = - 10V, IE = 0 f= 0.1MHz 300 pF * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD127 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 10k hFE, DC CURRENT GAIN VCE = -4V 1k 100 -0.1 -1 -10 -10 IC = 250 IB VBE(sat) -1 V CE(sat) -0.1 -0.01 -0.1 -1 -10 -100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 tR,tD [µs], TURN ON TIME Cob[pF], CAPACITANCE VCC= -30V IC = 250IB IB1= IB2 100 10 1 -0.1 -1 -10 1 tR tD, VBE(off)=0 0.1 0.01 -0.1 -100 Figure 3. Collector Output Capacitance -10 Figure 4. Turn On Time -100 10 VCC= -30V IC =250IB IB1=IB2 IC[A], COLLECTOR CURRENT tSTG,tF [µs], TURN OFF TIME -1 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR BASE VOLTAGE tSTG 1 tF 10 -10 50 1m 5m s D s 0µ s 0µ s C -1 -0.1 -0.01 0.1 -0.1 -1 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation -10 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A2, June 2001 MJD127 Typical Characteristic (Continued) PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD127 Package Demensions D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.30 ±0.10 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3