Data Sheet 4V Drive Nch + Pch MOSFET MP6M12 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) MPT6 (Duel) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). Application Switching (6) (5) (4) (1) (2) (3) Inner circuit (6) (5) ∗1 Packaging specifications Type Package Code Basic ordering unit (pieces) MP6M12 (4) Taping TCR 1000 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Symbol Continuous VGSS ID Pulsed Continuous IDP Is *1 Pulsed Isp *1 PD *2 Total power dissipation Channel temperature Range of storage temperature Tch Tstg Limits Tr1 : N-ch Tr2 : P-ch Unit 30 ±20 30 ±20 V V 5.0 5.0 A 12 1.6 12 1.6 A A 12 12 A 2.0 1.4 150 55 to 150 W / TOTAL W / ELEMENT C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.10 - Rev.A Data Sheet MP6M12 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - ±10 A VGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions 30 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA - 30 42 ID=5.0A, VGS=10V m ID=5.0A, VGS=4.5V Static drain-source on-state resistance RDS (on) - 40 56 - 45 63 Forward transfer admittance l Yfs l* 2.5 - - S VDS=10V, ID=5.0A Input capacitance Ciss - 250 - pF VDS=10V Output capacitance Coss - 90 - pF VGS=0V Reverse transfer capacitance Crss - 45 - pF f=1MHz Turn-on delay time td(on)* - 6 - ns ID=2.5A, VDD 15V tr * - 27 - ns VGS=10V td(off)* - 26 - ns RL=6 tf * - 5 - ns RG=10 Total gate charge Qg * - 4.0 - nC ID=5.0A Gate-source charge Gate-drain charge Qgs * Qgd * - 1.2 1.2 - nC nC VDD 15V VGS=5V Rise time Turn-off delay time Fall time * ID=5.0A, VGS=4.0V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=5.0A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.10 - Rev.A Data Sheet MP6M12 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - ±10 A VGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Gate threshold voltage 30 - - V ID=1mA, VGS=0V - 1 A VDS=30V, VGS=0V 1.0 - 2.5 V VDS=10V, ID=1mA - 40 56 ID=4.5A, VGS=10V m ID=2.5A, VGS=4.5V IDSS VGS (th) Conditions Static drain-source on-state resistance RDS (on) - 55 77 - 60 84 Forward transfer admittance l Yfs l* 2.5 - - S ID=4.5A, VDS=10V Input capacitance Ciss - 800 - pF VDS=10V Output capacitance Coss - 120 - pF VGS=0V Reverse transfer capacitance Crss - 110 - pF f=1MHz Turn-on delay time td(on)* - 10 - ns ID=2.5A, VDD 15V tr * - 25 - ns VGS=10V td(off)* - 80 - ns RL=6.0 tf * - 65 - ns RG=10 Total gate charge Qg * - 8.4 nC ID=4.5A Gate-source charge Gate-drain charge Qgs * Qgd * - 3.0 3.5 - nC nC VDD 15V VGS=5V Rise time Turn-off delay time Fall time * ID=2.5A, VGS=4.0V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=4.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.10 - Rev.A Data Sheet MP6M12 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics ( I ) Fig.2 Typical Output Characteristics (II) 5 5 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V VGS= 2.5V 4 DRAIN CURRENT : ID[A] 4 DRAIN CURRENT : ID[A] Ta=25°C Pulsed VGS= 2.5V 3 2 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V 3 2 1 VGS= 2.0V 1 VGS= 2.0V Ta=25°C Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] DRAIN CURRENT : ID[A] 8 10 Ta=25°C Pulsed VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 VGS= 4.0V VGS= 4.5V VGS= 10V 100 . 10 0.001 0 1 2 0.1 3 1 10 DRAIN-CURRENT : ID[A] GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (II) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current (III) 1000 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( I ) Fig.3 Typical Transfer Characteristics 10 1 4 DRAIN-SOURCE VOLTAGE : VDS[V] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 10 0.1 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : ID[A] 4/10 2011.10 - Rev.A Data Sheet MP6M12 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (IV) Fig.8 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] VGS= 4.0V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 10 0.1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mW] VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 100 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 ID= 2.5A 80 ID= 5.0A 60 40 20 0 0 0.5 1 1.5 0 5 SOURCE-DRAIN VOLTAGE : VSD [V] 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 10 1000 tf GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed td(off) SWITCHING TIME : t [ns] 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] 100 td(on) 10 tr 1 8 6 4 Ta=25°C VDD= 15V ID= 5.0A RG=10Ω Pulsed 2 0 0.01 0.1 1 10 0 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 TOTAL GATE CHARGE : Qg [nC] 5/10 2011.10 - Rev.A Data Sheet MP6M12 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 1000 100 Operation in this area is limited by RDS(ON) (VGS=10V) Ciss DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] 10 100 Crss Coss PW =100us 1 PW = 1ms PW =10ms 0.1 Ta=25°C f=1MHz VGS=0V Ta = 25°C Single Pulse : 1Unit Mounted on a ceramic board 10 DC operation 0.01 0.01 0.1 1 10 100 0.1 DRAIN-SOURCE VOLTAGE : VDS[V] 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) 0.01 Rth(ch-a) = 89.3 °C/W <Mounted on a ceramic board> 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.10 - Rev.A 〈Tr.2(Pch)〉 Data Sheet MP6M12 Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) 4.5 4.5 VGS= -10V 4 VGS= -3.0V Ta=25°C Pulsed VGS= -4.5V VGS= -4.0V 2.5 VGS= -2.8V 2 VGS= -2.8V 3.5 DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 3.5 3 VGS= -3.0V 4 1.5 3 VGS= -10V VGS= -4.5V VGS= -4.0V 2.5 2 1.5 1 VGS= -2.5V 1 0.5 0.5 VGS= -2.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] 6 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 1000 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 DRAIN CURRENT : -ID[A] 4 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.3 Typical Transfer Characteristics VGS= -4.0V VGS= -4.5V VGS= -10V 100 0.1 0.01 10 0.001 0 1 2 0.1 3 1 10 DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 1000 VGS= -10V Pulsed VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 10 0.1 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : -ID[A] 7/10 2011.10 - Rev.A Data Sheet MP6M12 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 10 VGS= -4.0V Pulsed VDS= -10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 10 0.1 1 10 0.1 100 10 VGS=0V Pulsed Ta=25°C Pulsed ID= -2.5A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : -Is [A] 10 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 80 ID= -4.5A 60 40 20 0 0 0.5 1 1.5 0 SOURCE-DRAIN VOLTAGE : -VSD [V] 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 1000 10 td(off) GATE-SOURCE VOLTAGE : -VGS [V] VDD≒-15V VGS=-10V RG=10W Ta=25°C Pulsed tf SWITCHING TIME : t [ns] 1 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] 100 tr 10 td(on) 1 8 6 4 Ta=25°C VDD= -15V ID= -4.5A Pulsed 2 0 0.01 0.1 1 10 0 DRAIN CURRENT : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 10 15 TOTAL GATE CHARGE : Qg [nC] 8/10 2011.10 - Rev.A Data Sheet MP6M12 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Operation in this area is limited by RDS(on) (VGS = -10V) Ciss PW = 100μs 10 DRAIN CURRENT : -ID [ A ] CAPACITANCE : C [pF] Ta=25°C f=1MHz VGS=0V 1000 100 Crss Coss 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) DC Operation 0.01 10 0.01 0.1 1 10 0.1 100 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS [ V ] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 0.01 0.001 0.0001 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W <Mounted on a CERAMIC board> 0.01 1 100 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.10 - Rev.A Data Sheet MP6M12 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching Time Measurement Circuit toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform <Tr2(Pch)> Pulse width ID VDS VGS VGS 10% 50% 90% 50% RL D.U.T. 10% VDD RG VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A