MPF102 Preferred Devices JFET VHF Amplifier N−Channel − Depletion Features • Pb−Free Package is Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Drain −Gate Voltage VDG 25 Vdc Gate−Source Voltage VGS −25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C TJ 125 °C Tstg −65 to +150 °C Junction Temperature Range Storage Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 GATE 2 SOURCE TO−92 (TO−226AA) CASE 29−11 STYLE 5 1 2 3 MARKING DIAGRAM MPF 102 AYWW G G MPF102 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPF102 MPF102G Package Shipping TO−92 1000 Units/Bulk TO−92 (Pb−Free) 1000 Units/Bulk Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 Publication Order Number: MPF102/D MPF102 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit −25 − Vdc − − −2.0 −2.0 nAdc mAdc − −8.0 Vdc −0.5 −7.5 Vdc 2.0 20 mAdc 2000 1600 7500 − mmhos − 800 mmhos − 200 mmhos − 7.0 pF − 3.0 pF OFF CHARACTERISTICS Gate −Source Breakdown Voltage (IG = −10 mAdc, VDS = 0) V(BR)GSS Gate Reverse Current (VGS = −15 Vdc, VDS = 0) (VGS = −15 Vdc, VDS = 0, TA = 100°C) IGSS Gate −Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nAdc) VGS(off) Gate −Source Voltage (VDS = 15 Vdc, ID = 0.2 mAdc) VGS ON CHARACTERISTICS Zero −Gate −Voltage Drain Current (Note 1) (VDS = 15 Vdc, VGS = 0 Vdc) IDSS SMALL− SIGNAL CHARACTERISTICS Forward Transfer Admittance (Note 1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) ⎪yfs⎟ Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yis) Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yos) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss 1. Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%. http://onsemi.com 2 MPF102 COMMON SOURCE CHARACTERISTICS 30 20 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 bis @ 0.25 IDSS 0.3 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 2. Reverse Transfer Admittance (yrs) 20 10 10 7.0 5.0 gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 |bfs| @ IDSS |bfs| @ 0.25 IDSS 5.0 bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 gos @ 0.25 IDSS 0.02 0.3 0.2 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 Figure 3. Forward Transfer Admittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 3 MPF102 COMMON SOURCE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 1.0 40° 350° 340° 330° 320° 40° 310° 50° 20° 10° 310° 900 500 ID = IDSS 800 60° 300° 400 500 0.7 600 0.6 900 300° 0.1 500 70° 290° 0.2 700 600 290° 400 700 800 700 800 90° 320° ID = IDSS, 0.25 IDSS 600 80° 330° 0.4 300 70° 340° 0.3 400 50° 0.8 350° 300 200 60° 0° 200 100 0.9 30° ID = 0.25 IDSS 100 80° 280° 300 280° 0.0 200 270° 90° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 900 150° 160° 170° 180° 190° 200° 210° 150° 160° Figure 5. S11s 30° 20° 10° 0° 350° 170° 340° 330° 30° 20° 10° 80° 90° 700 110° 0.4 800 600 100° 210° 0° 350° 340° 330° 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 260° 100° 260° 250° 110° 250° 240° 120° 240° 230° 130° 230° 220° 140° 220° 320° 310° 300° 0.7 290° 900 700 600 200° 40° 0.5 60° 900 190° 320° 0.6 50° 800 180° Figure 6. S12s 40° 70° 270° 100 500 0.3 ID = 0.25 IDSS 500 0.3 100 400 400 280° 0.6 300 200 0.4 100 0.5 300 120° ID = IDSS 200 130° 0.6 140° 150° 160° 170° 180° 190° 200° 210° 150° Figure 7. S21s 160° 170° 180° 190° Figure 8. S22s http://onsemi.com 4 200° 210° MPF102 COMMON GATE CHARACTERISTICS grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 10 7.0 5.0 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS big @ 0.25 IDSS 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 gog @ 0.25 IDSS 0.1 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 5 MPF102 COMMON GATE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 350° 340° 330° 30° 0.7 40° 100 310° 50° 300° 60° 290° 70° 280° 80° 0° 350° 340° 330° 0.04 200 300 320° 0.03 400 100 500 200 ID = IDSS 0.4 310° 600 300 0.5 60° 70° 40° 10° ID = 0.25 IDSS 0.6 50° 320° 20° 0.02 700 400 500 300° 800 600 900 0.01 290° 700 80° 800 0.3 900 90° 90° 270° 100° ID = IDSS 110° 110° 250° 270° 500 600 100° 260° 280° 0.0 100 700 600 700 260° ID = 0.25 IDSS 250° 0.01 800 120° 120° 240° 240° 800 0.02 900 130° 130° 230° 230° 900 140° 140° 220° 150° 160° 170° 180° 190° 200° 210° 20° 10° 0° 350° 150° 160° 170° 340° 330° 30° 20° 10° 40° 320° 190° 0° 1.5 1.0 350° 300 200° 210° 340° 330° 500 200 100 700 600 800 0.9 ID = IDSS 320° 400 100 0.4 50° 180° Figure 14. S12g 0.5 40° 220° 0.04 Figure 13. S11g 30° 0.03 900 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 100 ID = IDSS, 0.25 IDSS 0.3 0.8 60° 0.2 70° 310° ID = 0.25 IDSS 80° 0.1 900 90° 300° 0.7 290° 280° 0.6 900 150° 160° 170° 180° 190° 200° 210° 150° Figure 15. S21g 160° 170° 180° 190° Figure 16. S22g http://onsemi.com 6 200° 210° MPF102 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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