MOTOROLA MPS6715

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by MPS6714/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Value
Unit
VCEO
MPS6714
MPS6715
Collector – Base Voltage
Vdc
2
VCBO
MPS6714
MPS6715
Emitter – Base Voltage
5.0
Collector Current — Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Vdc
40
50
VEBO
Operating and Storage Junction
Temperature Range
1
30
40
Vdc
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
30
40
—
—
40
50
—
—
5.0
—
—
—
0.1
0.1
—
0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPS6714
MPS6715
V(BR)CBO
MPS6714
MPS6715
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
V(BR)EBO
Vdc
IEBO
Vdc
µAdc
ICBO
MPS6714
MPS6715
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
Vdc
µAdc
v 30 ms; Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
60
50
—
250
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
—
0.5
Vdc
Base – Emitter On Voltage
(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
1.2
Vdc
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
30
pF
Small–Signal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
hfe
2.5
25
—
SMALL– SIGNAL CHARACTERISTICS
1. Pulse Test: Pulse Width
v 30 ms; Duty Cycle v 2.0%.
1.0
VCE , COLLECTOR VOLTAGE (VOLTS)
300
h FE , CURRENT GAIN
200
100
70
VCE = 1.0 V
TJ = 25°C
50
30
20
50
100
200
IC =
1000 mA
0.4
IC =
10 mA
0.2
IC =
50 mA
IC =
100 mA
IC =
IC = 500 mA
250 mA
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
VBE(on) @ VCE = 1.0 V
0.4
VCE(sat) @ IC/IB = 10
0
1.0 2.0
1000
IB, BASE CURRENT (mA)
VBE(sat) @ IC/IB = 10
0.2
2
0.6
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
0.6
500
5.0 10 20
50 100 200 500 1000
qVB , TEMPERATURE COEFFICIENT (mV/°C)
V, VOLTAGE (VOLTS)
0.8
0.8
0
10
1.0
TJ = 25°C
50 100
–0.8
–1.2
–1.6
qVB FOR VBE
–2.0
–2.4
–2.8
1.0 2.0
5.0 10 20
50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
80
300
TJ = 25°C
200
C, CAPACITANCE (pF)
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
100
70
VCE = 10 V
TJ = 25°C
f = 20 MHz
50
60
40
Cibo
20
30
Cobo
0
10
20
50
100
200
1000
Cobo
Cibo
IC, COLLECTOR CURRENT (mA)
5.0
1.0
10
2.0
15
3.0
20
4.0
25
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Current Gain — Bandwidth Product
Figure 6. Capacitance
IC , COLLECTOR CURRENT (mA)
1k
1.0 s
500
1.0 ms 100 ms
200
TA = 25°C
100
DUTY CYCLE ≤ 10%
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
50
20
10
1.0
TC = 25°C
MPS6714
MPS6715
2.0
5.0
10
20
30 40
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 7. Active Region — Safe Operating
Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
A
B
R
SEATING
PLANE
P
L
F
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
K
X X
D
G
H
J
V
1 2 3
N C
SECTION X–X
N
CASE 029–05
(TO–226AE)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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4
◊
MPS6714/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data