MA-COM MRF10031

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by MRF10031/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for 960–1215 MHz long or short pulse common base amplifier
applications such as JTIDS and Mode–S transmitters.
• Guaranteed Performance @ 960 MHz, 36 Vdc
Output Power = 30 Watts Peak
Minimum Gain = 9.0 dB Min (9.5 dB Typ)
30 W (PEAK)
960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Standard Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
CASE 376B–02, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
55
Vdc
Collector–Base Voltage (1)
VCBO
55
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current — Continuous (1)
IC
3.0
Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
PD
110
0.625
Watts
mW/°C
Storage Temperature Range
Tstg
– 65 to + 200
°C
Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
1.6
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value
measured @ 23% duty cycle)
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MRF10031
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
V(BR)CES
55
—
—
Vdc
Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0)
V(BR)CBO
55
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
V(BR)EBO
3.5
—
—
Vdc
ICBO
—
—
2.0
mAdc
hFE
20
—
—
—
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS (10 µs Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%)
Common–Base Amplifier Power Gain
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)
GPB
9.0
9.5
—
dB
Collector Efficiency
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)
η
40
45
—
%
Load Mismatch
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz,
VSWR = 10:1 All Phase Angles)
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+
No Degradation in Output Power
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Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
εr = 2.55, 2 Oz. Copper
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 1000 µF, 50 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
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Figure 1. Test Circuit
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Figure 2. Output Power versus Input Power
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+38
+9 Ω
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+38
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Figure 3. Series Equivalent Input/Output Impedances
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PACKAGE DIMENSIONS
Q
G
2 PL
% –B–
R
K
D
2 PL
H
E
N
F
% 2 PL
–T–
–A–
% C
CASE 376B–02
ISSUE B
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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