Order this document by MRF464/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 80 W (PEP) Minimum Gain = 15 dB Efficiency = 40% Intermodulation Distortion = –32 dB (Max) 80 W (PEP), 30 MHz RF POWER TRANSISTOR NPN SILICON MATCHING PROCEDURE In the push–pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by Motorola consists of measuring hFE at the data sheet conditions and color coding the device to predetermined hFE ranges within the normal hFE limits. A color dot is added to the marking on top of the cap. Any two devices with the same color dot can be paired together to form a matched set of units. MAXIMUM RATINGS Rating Symbol Value Unit VCEO VCBO 35 Vdc 65 Vdc VEBO IC 4.0 Vdc 10 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.4 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous CASE 211–11, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Stud Torque (1) Symbol Max Unit RθJC 0.7 °C/W — 8.5 In. Lb. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Max Unit Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) V(BR)CEO 35 — Vdc Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 65 — Vdc Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 4.0 — Vdc ICES — 10 mAdc hFE 10 — — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = + 55°C) ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) NOTE: 1. Case 145A–10 — For Repeated Assembly Use 11 In. Lb. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 (continued) MRF464 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit Cob — 200 pF GPE 15 — dB IMD — – 32 dB 40 — % DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (Figure 1) (Pout = 80 W (PEP), IC = 3.6 Adc (Max), VCC = 28 Vdc, f1 = 30 MHz, f2 = 30.001 MHz) Intermodulation Distortion Ratio (Figure 1) (2) (Pout = 80 W (PEP), IC = 3.6 Adc (Max), VCC = 28 Vdc, f1 = 30 MHz, f2 = 30.001 MHz) Collector Efficiency η (Pout = 80 W (PEP), IC = 3.6 Adc (Max), VCC = 28 Vdc, f1 = 30 MHz, f2 = 30.001 MHz) NOTE: 2. To Mil–Std–1311 Version A, Test Method 2204B, Two Tone, Reference each Tone. VBB RF BEADS + 500 µF 1N248B 2000 pF BUTTON 0.01 µF 10 µH RFC 0.01 µF 25 µF 28 Vdc – RFC RL = 50 Ω 0.1 µF DUT ARCO 466 (80 – 480 pF) ARCO 469 (170 – 780 pF) T1 C.T. 10 1/2 W T2 (1:9) C2 RFC — 20 Turns @12 AWG Enameled Wire Close Wound in 2 Layers, 1/4″ I.D. T1 — 20 Turns #24 AWG Wire Wound on Micro–Metals T37–7 Toroid Core T1 — Center Tapped. T2 — 1:9 XFMR; 6 Turns of 2 Twisted Pairs of #28 AWG Enameled Wire. T2 — (8 Crests Per Inch) Bifilar Wound on Each of 2 Separate Balun Cores. T2 — (Stackpole #57–1503, No. 14 Material) Interconnected as shown T2 — RF Beads — Ferroxcube #56–590–65/3B C1 VBB adjusted for ICQ — 40 mAdc (ICQ = Quiescent VBB adjusted for ICQ — 40 mAdc Collector Current) C1 — 170 – 180 pF ARCO 469 or Equivalent C2 — 330 pF Figure 1. 30 MHz Test Circuit MRF464 2 MOTOROLA RF DEVICE DATA 50 VCC = 28 Vdc IGQ = 40 mA f = 30 MHz 100 40 G PE , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 120 80 60 40 30 20 20 0 VCC = 28 Vdc ICQ = 40 mA Pout = 80 W PEP 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1.5 2.2 2.4 2.6 2.8 2 3 5 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power IMD, INTERMODULATION DISTORTION (dB) Pout , OUTPUT POWER (WATTS PEP) ICQ = 40 mA f = 30, 30.001 MHz 100 80 IMD = – 30 dB 60 40 20 0 16 20 24 15 20 30 28 32 –10 VCC = 28 Vdc ICQ = 40 mA f = 30, 30.001 MHz – 20 – 30 3RD ORDER – 40 5TH 3RDORDER ORDER – 50 – 60 0 20 VCC, SUPPLY VOLTAGE (VOLTS) 40 60 80 100 120 140 Pout, OUTPUT POWER (WATTS PEP) Figure 4. Output Power versus Supply Voltage Figure 5. Intermodulation Distortion versus Output Power 2500 10 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) 10 Figure 3. Power Gain versus Frequency 140 120 7 f, FREQUENCY (MHz) 2000 1500 1000 VCC = 28 Vdc ICQ = 40 mA Pout = 80 W PEP 500 1.5 2 3 5 7 10 15 20 f, FREQUENCY (MHz) Figure 6. Output Capacitance versus Frequency MOTOROLA RF DEVICE DATA 30 8 6 4 VCC = 28 Vdc ICQ = 40 mA Pout = 80 W (PEP) 2 0 1.5 2 3 5 7 10 15 20 30 f, FREQUENCY (MHz) Figure 7. Output Resistance versus Frequency MRF464 3 IC, COLLECTOR CURRENT (AMPS) 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 VCC, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 8. DC Safe Operating Area 0 1.0 2.0 1.0 3.0 30 4.0 2.0 VCC = 28 Vdc ICQ = 40 mA Pout = 80 W PEP 15 3.0 7.0 FREQUENCY MHz Zin Ohms 2.0 7.0 15 30 9.0 – j5.40 3.3 – j1.50 2.8 – j1.10 1.4 – j0.30 4.0 5.0 6.0 7.0 8.0 9.0 10 2.0 f = 2.0 MHz 4.0 2.0 12 6.0 Figure 9. Series Input Impedance MRF464 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J H C E SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 ––– 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 ––– 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N MOTOROLA RF DEVICE DATA MRF464 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF464 6 ◊ *MRF464/D* MRF464/D MOTOROLA RF DEVICE DATA