FREESCALE MRF7S19170HSR3

Freescale Semiconductor
Technical Data
Document Number: MRF7S19170H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF7S19170HR3
MRF7S19170HSR3
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.2 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW
Output Power
• Pout @ 1 dB Compression Point w 170 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930 - 1990 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S19170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S19170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 72°C, 25 W CW
RθJC
0.25
0.31
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 372 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGG(Q)
4
5.4
7.6
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.72 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.9
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
703
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 1932.5 MHz and f =
1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16
17.2
19
dB
Drain Efficiency
ηD
29
32
—
%
PAR
5.7
6.2
—
dB
ACPR
—
- 37.5
- 35
dBc
IRL
—
- 16
-9
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S19170HR3 MRF7S19170HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) — continued
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1930 - 1990 MHz Bandwidth
Video Bandwidth @ 170 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
25
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 170 W CW
GF
—
0.5
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 170 W CW
Φ
—
2.06
—
°
Delay
—
4.7
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 170 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
16
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.015
—
dB/°C
ΔP1dB
—
0.01
—
dBm/°C
Average Group Delay @ Pout = 170 W CW, f = 1960 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MRF7S19170HR3 MRF7S19170HSR3
RF Device Data
Freescale Semiconductor
3
Z20
R1
VBIAS
VSUPPLY
+
C6
R2
C5
C4
C3
Z7
C8
R3
RF
INPUT Z1
Z2
Z3
Z4
Z5
Z6
C7
C1
C15
C16
C19
Z9
Z8
Z10 Z11 Z12 Z13
Z14
Z15
Z16 Z17
DUT
C2
C14
C13
C12
C10
Z18
RF
Z19 OUTPUT
C11
Z21
C9
Z1*
Z2*
Z3*
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
0.588″ x 0.083″ Microstrip
0.146″ x 0.083″ Microstrip
0.068″ x 0.083″ Microstrip
0.865″ x 0.098″ Microstrip
0.154″ x 0.098″ Microstrip
0.271″ x 0.787″ Microstrip
1.410″ x 0.080″ Microstrip
0.194″ x 0.787″ Microstrip
0.115″ x 1.360″ Microstrip
0.230″ x 1.360″ Microstrip
0.185″ x 1.120″ Microstrip
C17
Z12
Z13*
Z14*
Z15*
Z16*
Z17, Z18
Z19
Z20, Z21
PCB
C18
0.060″ x 0.420″ Microstrip
0.197″ x 0.083″ Microstrip
0.332″ x 0.083″ Microstrip
0.158″ x 0.083″ Microstrip
0.572″ x 0.083″ Microstrip
0.063″ x 0.220″ Microstrip
0.160″ x 0.083″ Microstrip
1.120″ x 0.080″ Microstrip
Taconic TLX - 0300, 0.030″, εr = 2.5
* Variable for tuning
Figure 1. MRF7S19170HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S19170HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
1.8 pF Chip Capacitors
ATC100B1R8BT500XT
ATC
C3, C8, C9, C10, C11
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C4
100 pF Chip Capacitor
ATC100B101JT500XT
ATC
C5
100 nF Chip Capacitor
200B104MT
ATC
C6, C15, C16, C17, C18
10 μF Chip Capacitors
C5750X5R1H106MT
TDK
C7
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C12
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C13
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C14
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C19
470 μF, 63 V Electrolytic Capacitor, Axial
EKME630ELL471M12X25LL
United Chemi - Con
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF7S19170HR3 MRF7S19170HSR3
4
RF Device Data
Freescale Semiconductor
C19
R2
R1
C5
C4
C3
C6
C8
C15
C16
R3
C1 C2
CUT OUT AREA
C10
C7
C11
C14
C13 C12
C9
C17
C18
MRF7S19170H
Rev 0
Figure 2. MRF7S19170HR3(HSR3) Test Circuit Component Layout
MRF7S19170HR3 MRF7S19170HSR3
RF Device Data
Freescale Semiconductor
5
Gps, POWER GAIN (dB)
17
34
Gps
16
15
33
ηD
32
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
31
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01%
−1
Probability (CCDF)
14
IRL
13
12
−1.5
PARC
11
10
1880
−2
1900
1920
1940
1960
1980
2000
−10
−15
−20
−25
−2.5
2040
2020
−30
IRL, INPUT RETURN LOSS (dB)
35
PARC (dB)
18
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
43
ηD
16
15
42
Gps
41
VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
14
40
−10
13
−3
−15
12 PARC
−3.4
11
−3.8
IRL
10
1880
1900
1920
1940
1960
1980
2000
PARC (dB)
Gps, POWER GAIN (dB)
17
44
−20
−25
−4.2
2040
2020
−30
IRL, INPUT RETURN LOSS (dB)
18
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
19
Gps, POWER GAIN (dB)
18
IDQ = 2100 mA
1750 mA
17
1400 mA
1050 mA
16
700 mA
15
1
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
IDQ = 700 mA
2100 mA
−40
1050 mA
−50
1750 mA
1400 mA
−60
10
100
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19170HR3 MRF7S19170HSR3
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
3rd Order
−50
5th Order
7th Order
−60
1
100
0
VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−10
−20
IM3−U
−30
IM3−L
IM5−U
−40
IM5−L
IM7−U
−50
IM7−L
−60
10
1
400
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON THE CCDF (dB)
1
50
VDD = 28 Vdc, IDQ = 1400 mA
f = 1960 MHz, Input PAR = 7.5 dB
Ideal
0
−1
45
40
−1 dB = 45 W
−2
35
−2 dB = 62 W
−3
30
−3 dB = 84 W
−4
30
35
40
45
50
55
60
65
70
75
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Actual
80
25
90
85
Pout, OUTPUT POWER (WATTS)
19
VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz
Single−Carrier W−CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
−30
Uncorrected, Upper and Lower
−40
DPD Corrected
No Memory Correction
−50
−60
TC = −30_C
18
Gps
17
75
25_C
25_C
60
85_C
16
85_C
15
VDD = 28 Vdc
IDQ = 1400 mA
f = 1960 MHz
ηD
13
41
42
43
44
45
46
47
48
49
50
45
30
14
DPD Corrected
with Memory Correction
−70
40
90
−30_C
1
10
100
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
15
ηD, DRAIN EFFICIENCY (%)
−20
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
0
400
MRF7S19170HR3 MRF7S19170HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
18
108
IDQ = 1400 mA
f = 1960 MHz
MTTF (HOURS)
Gps, POWER GAIN (dB)
17
16
15
107
106
VDD = 24 V
14
32 V
28 V
13
0
100
200
105
90
300
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 50 W Avg., and ηD = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0.001
0.0001
0
2
4
6
−60
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
PEAK−TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−ACPR in 3.84 MHz
Integrated BW
−100
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S19170HR3 MRF7S19170HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 2040 MHz
Zload
f = 1880 MHz
Zsource
f = 2040 MHz
f = 1880 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg.
f
MHz
Zsource
W
Zload
W
1880
1.338 - j7.859
0.967 - j2.868
1900
1.515 - j7.609
0.942 - j2.725
1920
1.743 - j7.432
0.920 - j2.585
1940
2.007 - j7.352
0.893 - j2.449
1960
2.249 - j7.393
0.865 - j2.313
1980
2.410 - j7.553
0.841 - j2.192
2000
2.411 - j7.788
0.820 - j2.073
2020
2.244 - j7.995
0.802 - j1.957
2040
1.966 - j8.101
0.779 - j1.834
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S19170HR3 MRF7S19170HSR3
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
61
61
59
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
60
62
Ideal
P6dB = 54.33 dBm (271 W)
58
P3dB = 53.97 dBm (249 W)
57
56
P1dB = 53.25 dBm
(211 W)
55
Actual
54
53
VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 1960 MHz
52
51
32
33
34
35
36
37
38
39
40
41
42
59
P3dB = 54.9 dBm (310 W)
58
57
P1dB = 54.14 dBm
(259 W)
56
55
Actual
54
VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 1960 MHz
53
52
43
44
33
34
35
Pin, INPUT POWER (dBm)
36
37
38
39
40
41
42
43
44
45
Pin, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
P3dB
Ideal
P6dB = 55.27 dBm (336 W)
60
Zsource
Ω
Zload
Ω
2.34 - j9.24
0.79 - j2.94
Figure 17. Pulsed CW Output Power
versus Input Power
Test Impedances per Compression Level
P3dB
Zsource
Ω
Zload
Ω
2.34 - j9.24
0.79 - j2.94
Figure 18. Pulsed CW Output Power
versus Input Power
MRF7S19170HR3 MRF7S19170HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
4
G
2X
1
Q
bbb
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
M
B
(FLANGE)
3
K
2
bbb
D
T A
M
M
B
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
(INSULATOR)
ccc
M
T A
M
aaa
M
T A
M
B
S
(LID)
(LID)
M
(INSULATOR)
B
M
H
C
T
A
A
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
E
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
SEATING
PLANE
CASE 465B - 03
ISSUE D
NI - 880
MRF7S19170H
(FLANGE)
B
1
B
(FLANGE)
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2
bbb
M
D
T A
M
B
M
M
bbb
M
T A
M
B
M
T A
M
B
ccc
M
N
ccc
R
(INSULATOR)
M
T A
M
S
(LID)
aaa
M
B
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
SEATING
PLANE
(FLANGE)
CASE 465C - 02
ISSUE D
NI - 880S
MRF7S19170HS
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MRF7S19170HR3 MRF7S19170HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2006
• Initial Release of Data Sheet
1
Dec. 2008
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Updated Typical Performance table to provide better definition of characterization attributes, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 7
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
• Deleted output signal data from Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping,
Single - Carrier Test Signal, p. 8
MRF7S19170HR3 MRF7S19170HSR3
12
RF Device Data
Freescale Semiconductor
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MRF7S19170HR3 MRF7S19170HSR3
Document
Number:
RF
Device
DataMRF7S19170H
Rev. 1, 12/2008
Freescale
Semiconductor
13