FREESCALE MRF9080LR3

Freescale Semiconductor
Technical Data
MRF9080
Rev. 5, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of these devices make them ideal for large−signal, common−
source amplifier applications in 26 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9080LR3
MRF9080LSR3
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL N−CHANNEL
RF POWER MOSFETs
CASE 465−06, STYLE 1
NI−780
MRF9080LR3
CASE 465A−06, STYLE 1
NI−780S
MRF9080LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
−0.5, +65
Vdc
Gate−Source Voltage
VGS
−0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
W
W/°C
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.7
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
Freescale Semiconductor
Wireless RF Product Device Data
MRF9080LR3 MRF9080LSR3
5−1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vds, VGS = 0)
IDSS
—
—
1
µAdc
Gate−Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs
—
8.0
—
S
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
73
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
2.9
—
pF
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
P1dB
68
75
—
W
Common−Source Amplifier Power Gain @ 70 W (Min)
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Gps
17
18.5
20
dB
Drain Efficiency @ Pout = 70 W
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
η1
47
52
—
%
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
η2
—
55
—
%
Input Return Loss
(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz)
IRL
9.5
12.5
—
dB
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) (2)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
1. Part is internally input matched.
2. To meet application requirements, Freescale test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency
MRF9080LR3 MRF9080LSR3
5−2
Freescale Semiconductor
Wireless RF Product Device Data
Figure 1. Broadband GSM 900 Test Circuit Schematic
Table 5. Broadband GSM 900 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
4.7 pF Chip Capacitor
100B4R7BW
ATC
C2
2.7 pF Chip Capacitor
100B2R7BW
ATC
C3
1.5 pF Chip Capacitor
100B1R5BW
ATC
C4, C5, C9, C10, C12, C13
5.6 pF Chip Capacitors
100B5R6CW
ATC
C6, C16, C17
22 pF Chip Capacitors
100B220GW
ATC
C7, C18
10 µF, 35 V Tantalum Chip Capacitors
293D106X9035D2T
Sprague−Vishay
C8, C11
10 pF Chip Capacitors
100B100JW
ATC
C14
0.8 pF Chip Capacitor
100B0R8BW
ATC
C15
8.2 pF Chip Capacitor
100B8R2GW
ATC
R1, R2, R3
1.0 kΩ, 1/8 W Chip Resistors (0805)
WB1, WB2
Beryllium Copper Wear Blocks
0.004″ x 0.210″ x 0.520″
Raw PCB Material
30 mil Glass Teflon®, εr = 2.55
TLX8−0300
Taconic
PCB
Etched Circuit Board
C−GY−00−001−02
Cibel
MRF9080LR3 MRF9080LSR3
Freescale Semiconductor
Wireless RF Product Device Data
5−3
CUT OUT AREA
MRF9080
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. Broadband GSM 900 Test Circuit Component Layout
MRF9080LR3 MRF9080LSR3
5−4
Freescale Semiconductor
Wireless RF Product Device Data
Figure 3. Broadband GSM 900 Optimized Demo Board Schematic
Table 6. Broadband GSM 900 Optimized Demo Board Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
4.7 pF Chip Capacitor, ACCU−P (0805)
#08051J3R9CBT
AVX
C2
3.9 pF Chip Capacitor, ACCU−P (0805)
#08051J3R9CBT
AVX
C3, C15
22 pF Chip Capacitors, ACCU−P (0805)
#08051J221
AVX
C4, C6
22 mF, 35 V Tantalum Chip Capacitors
#T491X226K035AS4394
Kemet
C5
1.0 mF Chip Capacitor, ACCU−P (0805)
#08053G105ZATEA
AVX
C7, C8
5.6 pF Chip Capacitors, ACCU−P (0805)
#08051J5R18CBT
AVX
C9
220 mF, 63 V Electrolytic Capacitor
C10, C11
3.3 pF Chip Capacitors, ACCU−P (0805)
#08051J8R2CBT
AVX
C12, C13
2.2 pF Chip Capacitors, ACCU−P (0805)
#08051J2R2CBT
AVX
C14
4.7 pF Chip Capacitor
#100B
ATC
P1
5.0 kΩ Potentiometer CMS Cermet Multi−turn
#3224W
Bourns
R1
10 Ω, 1/8 W Chip Resistor (0805)
R2
1.0 kΩ, 1/8 W Chip Resistor (0805)
R3
1.2 kΩ, 1/8 W Chip Resistor (0805)
R4
2.2 kΩ, 1/8 W Chip Resistor (0805)
R5, R6
1.0 kΩ, 1/8 W Chip Resistors (0805)
T1
Bipolar NPN Transistor, SOT−23
#BC847ALT1
ON Semiconductor
U1
Voltage Regulator, Micro−8
#LP2951ACDM−5.0R2
ON Semiconductor
RF Connectors, Type SMA
#R125510001
Radial
Substrate = Taconic RF35, Thickness 0.5 mm
MRF9080LR3 MRF9080LSR3
Freescale Semiconductor
Wireless RF Product Device Data
5−5
!
"#
MRF9080
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout
MRF9080LR3 MRF9080LSR3
5−6
Freescale Semiconductor
Wireless RF Product Device Data
TYPICAL CHARACTERISTICS
(IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
!4
15
15
15
3 !4
) 3 +, 3 °
.% & '(
* 3 5
) 3 +, 3 °
Figure 5. Power Gain versus Output Power
/0
/0 %1&1
1'!(
. 3 3 !4
* 3 5
3 °
7
7
7
.
6
6
6
6
6
6
$% & '(
6
. %11&1'(
°
°
3 !4
* 3 5
) 3 +,
.% & '(
Figure 9. Power Gain versus Output Power
Freescale Semiconductor
Wireless RF Product Device Data
6
°
3 !4
* 3 5
) 3 +, 3 °
Figure 8. Output Power and Efficiency versus
Input Power
/0 %1&1
1'!(
7
)% &*&
# '+,-(
h
Figure 7. Power Gain and Input Return Loss
versus Frequency
7
. 3 .% & '(
7
"
Figure 6. Power Gain versus Output Power
"%1
1&
1"1'!(
. %11&1'(
3 !4
h%1
1&&
#1'2(
!4
°
°
h
°
°
.
3 !4
* 3 5
) 3 +,-
6
6
6
6
6
6
6
h%1
1&&
#1'2(
/0 %1&1
1'!(
/0 %1&1
1'!(
* 3 5
6
$% & '(
Figure 10. Output Power and Efficiency versus Input
Power
MRF9080LR3 MRF9080LSR3
5−7
8:;!
) 3 +,) 3 +,-
) 3 +,-
8 3 Ω
8049
) 3 +,-
3 % * 3 5% . 3 f
MHz
Zload
Ω
Zsource
Ω
880
0.91 − j2.11
1.22 − j0.12
920
0.88 − j2.65
1.00 − j0.16
960
1.6 − j2.61
1.22 − j0.22
1000
2.45 − j3.38
1.14 − j0.41
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
./.
+;.4<$=
9.>?
9@$49
!9 90.
/.
+;.4<$=
9.>?
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
MRF9080LR3 MRF9080LSR3
5−8
Freescale Semiconductor
Wireless RF Product Device Data
NOTES
MRF9080LR3 MRF9080LSR3
Freescale Semiconductor
Wireless RF Product Device Data
5−9
NOTES
MRF9080LR3 MRF9080LSR3
5−10
Freescale Semiconductor
Wireless RF Product Device Data
PACKAGE DIMENSIONS
B
G
Q
CCC
2X
1
+
+
+
&A
6 +&
"&
& #6+76
6 ""
+&
A ,6
6 &"&&
6 +&
, +&& 6 '6( #
+ B& #6
3
B
K
2
(FLANGE)
D
CCC
+
+
+
M
R
(INSULATOR)
CCC
N
+
+
+
444
+
+
S
(LID)
444
H
+
+
+
;;;
+
+
(LID)
+
(INSULATOR)
+
C
F
E
T
A
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
6
6
6
6
6
6
6
6
6
6
6
6
61
6
6
6
6
6
6
6
6
6
6
6
6
6
6
61&
61&
61&
MILLIMETERS
MIN
MAX
6
6
6
6
6
6
6
6
6
6
6
6
61
6
6
6
6
6
6
6
6
6
6
6
6
6
6
61&
61&
61&
#"& A
6 6 &
6 &
(FLANGE)
CASE 465−06
ISSUE F
NI−780
MRF9080LR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
&A
6 +&
"&
& #6+76
6 ""
+&
A ,6
6 &"&&
6 +&
, +&& 6 '6( #
+ B& #6
D
CCC
+
+
+
N
(LID)
444
M
R
+
+
+
444
+
S
(INSULATOR)
CCC
+
+
+
+
;;;
+
+
(LID)
+
(INSULATOR)
+
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A−06
ISSUE F
NI−780S
MRF9080LSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
777
6
777
6
61&
61&
61&
MILLIMETERS
MIN
MAX
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
777
6
777
6
61&
61&
61&
#"& A
6 6 &
6 &
MRF9080LR3 MRF9080LSR3
Freescale Semiconductor
Wireless RF Product Device Data
5−11
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© Freescale Semiconductor, Inc. 2004. All rights reserved.
MRF9080LR3 MRF9080LSR3
Document Number: MRF9080
Rev. 5, 12/2004
5−12
Freescale Semiconductor
Wireless RF Product Device Data