DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver. ORDERING INFORMATION Part No. Package 2SA1129 TO-220AB FEATURES • Large current capacity with small package: IC(DC) = −7.0 A (TO-220AB) • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. @IC = −3.0 A, IB = −0.1 A • Complementary transistor: 2SC2654 ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Ratings Unit Collector to base voltage Parameter Symbol VCBO −30 V Collector to emitter voltage VCEO −30 V Emitter to base voltage VEBO −7.0 V −7.0 A −15 A Collector current (DC) IC(DC) Collector current (pulse) IC(pulse) Base current (DC) Conditions PW ≤ 300 µs, duty cycle ≤ 10% IB(DC) Total power dissipation PT Junction temperature Tj Storage temperature Tstg TC = 25°C TA = 25°C −3.5 A 40 W 1.5 W 150 −55 to +150 °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14856EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1129 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol MAX. Unit ICBO VCB = −30 V, IE = 0 A −10 µA IEBO VEB = −5.0 V, IC = 0 A −10 µA DC current gain hFE1 VCE = −1.0 V, IC = −3.0 A DC current gain hFE2 VCE = −1.0 V, IC = −5.0 ANote Collector cutoff current Emitter cutoff current Conditions MIN. Note 40 200 20 Collector saturation voltage VCE(sat)1 IC = −3.0 A, IB = −0.1 ANote −0.3 V Collector saturation voltage VCE(sat)2 IC = −5.0 A, IB = −0.5 ANote −0.6 V Base saturation voltage VBE(sat)1 IC = −3.0 A, IB = −0.1 ANote −1.5 V Base saturation voltage VBE(sat)2 IC = −5.0 A, IB = −0.5 ANote −2.0 IC = −5.0 A, RL = 4.0 Ω, IB1 = −IB2 = −0.5 A, VCC ≅ −20 V PW = 50 µs, duty cycle = 2% 1.0 V µs 2.5 µs 1.0 µs Turn-on time ton Storage time tstg Fall time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE1 40 to 80 60 to 120 100 to 200 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. Data Sheet D14856EJ2V0DS 2SA1129 PPDOXPLQXPERDUG QRLQVXODWLQJERDUG JUHDVHFRDWLQJQDWXUDO DLUFRROLQJ :LWKLQILQLWHKHDWVLQN Collector Current IC (A) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°°C) $PELHQW7HPSHUDWXUH7$°& Derating dT (%) &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 Collector Current IC (A) Transient Thermal Resistance rth(j-c) (°C/W) &DVH7HPSHUDWXUH7&°& 3XOVH:LGWK3:PV &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 Data Sheet D14856EJ2V0DS 3 '&&XUUHQW*DLQK)( 3XOVHWHVW %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 2SA1129 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ 4 3XOVHWHVW Data Sheet D14856EJ2V0DS 2SA1129 PACKAGE DRAWING (UNIT: mm) %DVH &ROOHFWRU (PLWWHU )LQFROOHFWRU Data Sheet D14856EJ2V0DS 5 2SA1129 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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