DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC(DC): −10 A, IC(pulse): −15 A • High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE = −2.0 V, IC = −0.5 A) VCE(sat) ≤ −0.25 V (@IC = −4.0 A, IB = −0.05 A) QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −30 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) −10 A IC(pulse)* −15 A IB(DC) −0.5 A Total power dissipation PT (Ta = 25°C)** 1.0 W Total power dissipation PT (Tc = 25°C) 15 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) * PW ≤ 10 ms, duty cycle ≤ 50% ** Printing board mounted The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16119EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1615, 1615-Z ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. Unit Collector cutoff current ICBO VCB = −20 V, IE = 0 −1.0 µA Emitter cutoff current IEBO VEB = −8.0 V, IC = 0 −1.0 µA DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 200 DC current gain hFE2* VCE = −2.0 V, IC = −4.0 A 160 Collector saturation voltage VCE(sat)* IC = −4.0 A, IB = −0.05 A −0.2 −0.25 V Base saturation voltage VBE(sat)* IC = −4.0 A, IB = −0.05 A −0.9 −1.2 V Gain bandwidth product fT VCE = −5.0 V, IE = 1.5 A 180 MHz 600 Output capacity Cob VCB = −10 V, IE = 0, f = 1.0 MHz 220 pF Turn-on time ton 80 ns Storage time tstg IC = −5.0 A, IB1 = −IB2 = 0.125 A, RL = 2.0 Ω, VCC ≅ −10 V 300 ns 60 ns Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking L K hFE2 200 to 400 300 to 600 PACKAGE DRAWING (UNIT: mm) 2SA1615 2SA1615-Z Electrode Connection 1. Base 2. Collector 3. Emitter 4. Collector (fin) 2 MAX. Data Sheet D16119EJ1V0DS 2SA1615, 1615-Z IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25 °C) Case Temperature TC (°C) Collector Current IC (A) Collector Current IC (A) Case Temperature TC (°C) Single pulse Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) DC Current Gain hFE Collector Current IC (A) –15 –10 –5 Base to Emitter Voltage VBE (V) Collector Current IC (A) Data Sheet D16119EJ1V0DS 3 Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) 2SA1615, 1615-Z Collector Current IC (A) Collector Current IC (A) SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP 4 Data Sheet D16119EJ1V0DS 2SA1615, 1615-Z [MEMO] Data Sheet D16119EJ1V0DS 5 2SA1615, 1615-Z • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4