Transistors 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planar type Unit: mm For low-frequency driver amplification 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 ■ Features 3 2 0.5±0.08 1.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C (Emitter open) 2SB0789 Unit VCBO −100 V −100 VCEO V VEBO −5 V Collector current IC − 0.5 A Peak collector current ICP −1 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Emitter-base voltage (Collector open) 1: Base 2: Collector 3: Emitter MiniP3-F1 Package −120 2SB0789A 45˚ 3.0±0.15 −120 2SB0789A Collector-emitter voltage 2SB0789 (Base open) Rating 0.4 max. Collector-base voltage 0.4±0.04 3˚ Symbol 2.6±0.1 Parameter 1.0+0.1 –0.2 1 0.4±0.08 3˚ • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC 2.5±0.1 1.5±0.1 Marking Symbol: • 2SB0789: D • 2SB0789A: E cm2 Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Symbol 2SB0789 Conditions VCEO IC = −100 µA, IB = 0 VEBO IE = −10 µA, IC = 0 VCE = −10 V, IC = −150 mA 90 VCE = −5 V, IC = −500 mA 50 Collector-emitter saturation voltage *1 VCE(sat) IC = −500 mA, IB = −50 mA Base-emitter saturation voltage *1 VBE(sat) IC = −500 mA, IB = −50 mA Transition frequency hFE1 *2 VCB = −10 V, IE = 50 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) Max Unit V −5 hFE2 Forward current transfer ratio *1 Typ −120 2SB0789A Emitter-base voltage (Collector open) Min −100 VCB = −10 V, IE = 0, f = 1 MHz Cob V 220 − 0.2 − 0.6 V − 0.85 −1.20 V 120 MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: December 2002 SJC00056CED 1 2SB0789, 2SB0789A PC Ta IC VCE −18 mA −16 mA −14 mA −1.0 0.8 − 0.4 mA − 0.6 0.6 − 0.4 0.4 − 0.2 mA − 0.2 0.2 0 20 40 60 80 100 120 140 160 −2 0 − 0.1 −6 −8 −10 25°C −10 75°C − 0.01 − 0.01 − 0.1 −1 −10 160 140 120 100 80 60 40 20 10 Emitter current IE (mA) 100 Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 50 IE = 0 f = 1 MHz Ta = 25°C 40 30 20 10 0 −1 −10 −100 Collector-base voltage VCB (V) SJC00056CED −10 600 −15 VCE = −10 V 500 400 300 Ta = 75°C 200 25°C −25°C 100 0 − 0.01 − 0.1 −1 Collector current IC (A) Collector current IC (A) VCB = −10 V Ta = 25°C 1 −5 hFE IC Ta = −25°C −1 fT I E 180 0 Base current IB (mA) IC / IB = 10 − 0.1 200 0 −12 −10 Collector current IC (A) 0 −4 −100 Base-emitter saturation voltage VBE(sat) (V) Ta = 75°C 25°C −25°C −1 − 0.4 VBE(sat) IC −10 − 0.1 − 0.6 Collector-emitter voltage VCE (V) IC / IB = 10 − 0.01 − 0.01 − 0.8 − 0.2 VCE(sat) IC −1 VCE = −10 V Ta = 25°C −1.0 Forward current transfer ratio hFE 0 −100 Collector-emitter saturation voltage VCE(sat) (V) −12 mA −10 mA − 0.8 mA − 0.6 mA − 0.8 Ambient temperature Ta (°C) Transition frequency fT (MHz) IB = −20 mA Collector current IC (A) 1.0 −1.2 Ta = 25°C Collector current IC (A) Collector power dissipation PC (W) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.2 0 2 IC I B −1.2 1.4 −10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL