Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0938A 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 (7.6) Rating 2SB0938 1.5+0 –0.4 1 Symbol 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (1.5) ■ Absolute Maximum Ratings TC = 25°C Parameter 1.0±0.1 4.4±0.5 • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 6.0±0.2 2.0±0.5 ■ Features 3.4±0.3 10.0±0.3 1.5±0.1 For power amplification and switching Complementary to 2SD1261, 2SD1261A 8.5±0.2 (6.5) −60 Collector-emitter voltage 2SB0938 (Base open) 2SB0938A VCEO V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −4 A Note) Self-supported type package is also prepared. Peak collector current ICP −8 A Internal Connection Collector power dissipation PC 40 W 1: Base 2: Collector 3: Emitter N-G1 Package −80 Ta = 25°C 1.3 C B Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Symbol 2SB0938 Conditions IC = −30 mA, IB = 0 VCEO Collector-base cutoff current (Emitter open) 2SB0938 Collector-emitter cutoff current (Base open) 2SB0938 Collector-emitter saturation voltage −60 Unit V VBE VCE = −3 V,IC = −3 A −2.5 V VCB = −60 V,IE = 0 −200 µA VCB = −80 V,IE = 0 −200 VCE = −30 V,IB = 0 −500 ICEO VCE = −40 V,IB = 0 −500 IEBO VEB = −5 V,IC = 0 −2 2SB09378 Forward current transfer ratio Max ICBO 2SB0938A Emitter-base cutoff current (Collector open) Typ −80 2SB0938A Base-emitter voltage Min hFE1 VCE = −3 V, IC = −0.5 A 1 000 hFE2 * VCE = −3 V, IC = −3 A 2 000 VCE(sat) IC = −3 A, IB = −12 mA −2 IC = −5 A, IB = −20 mA −4 µA mA 10 000 V Transition frequency fT VCE = −10 V, IC = −0.5 A, f = 1 MHz 15 MHz Turn-on time ton IC = −3 A, 0.3 µs Strage time tstg IB1 = −12 mA, IB2 = 12 mA 2 µs Fall time tf VCC = −50 V 0.5 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Publication date: March 2003 Q P 2 000 to 5 000 4 000 to 10 000 Note) The part number in the parenthesis shows conventional part number. SJD00019BED 1 2SB0938, 2SB0938A PC Ta IC VCE 40 (1) TC=25˚C −5 30 20 10 VCE=–3V IB=–3.0mA –2.5mA –2.0mA –1.5mA –1.0mA −4 −8 Collector current IC (A) (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) IC VBE −10 −6 50 –0.5mA −3 –0.4mA −2 –0.3mA –0.2mA TC=100˚C –25˚C −4 −2 −1 (2) 25˚C −6 (3) 0 0 40 80 120 160 −1 0 VCE(sat) IC Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) TC=100˚C 25˚C −1 –25˚C − 0.1 −1 VCE=–3V TC=100˚C 25˚C 104 –25˚C 103 102 − 0.01 −10 − 0.1 −1 −10 Thermal resistance Rth (°C/W) Collector current IC (A) t=10ms t=300ms 2SB0938A 2SB0938 − 0.1 −10 −100 103 102 10 1 − 0.1 −1 −10 −100 −1 000 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) 102 (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 Time t (s) Collector-emitter voltage VCE (V) 2 IE=0 f=1MHz TC=25˚C Rth t t=1ms SJD00019BED −3.2 Collector-base voltage VCB (V) 103 −10 ICP − 0.01 −1 −2.4 104 Collector current IC (A) Non repetitive pulse TC=25˚C −1 −1.6 Cob VCB Safe operation area IC − 0.8 0 Base-emitter voltage VBE (V) 105 Collector current IC (A) −100 0 −5 hFE IC −10 − 0.1 −4 106 IC/IB=250 − 0.01 − 0.01 −3 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −100 −2 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL