NUF2900MN Two Line EMI Filter with ESD Protection for High Speed Data Interface NUF2900MN is a two line EMI filter with ESD protection designed for high speed data interface. It offers greater than −30 dB attenuation at frequencies from 800 MHz to 6.0 GHz while supporting data rates as high as 250 Mbps (125 MHz). http://onsemi.com 1 8 4 5 Features • Provides EMI Filtering and ESD Protection • Maximum Data Rate up to 250 Mbps • Maximum ESD Rating of: • • • • 5.0 kV (Contact) DFN8, 2x2 mm Package Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C Human Body Model = 3B This is a Pb−Free Device* (Top View) MARKING DIAGRAM Applications • • • • EMI Filtering and ESD Protection for High Speed Data Interface Serializer / Deserializer Camera Imager Interface High Resolution Color LCD Display 1 DFN8 CASE 506AA PLASTIC 1 4 U9 M G G U9 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) OUT1 8 NC 7 1 IN1 2 NC GND NC 6 3 NC OUT2 5 4 IN2 (Bottom View) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 − Rev. 0 1 Device Package Shipping † NUF2900MNT1G DFN8 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NUF2900MN/D NUF2900MN MAXIMUM RATINGS Parameter Symbol Value Unit VPP 5.0 kV Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range Tstg −55 to 150 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s) TL 260 °C ESD Discharge IEC61000−4−2 Contact Discharge Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Maximum Reverse Working Voltage Min Typ VRWM Breakdown Voltage Leakage Current IR = 1.0 mA VBR VRWM = 3.3 V IR 6.0 7.0 Max Unit 5.0 V 8.3 V 0.1 A 5.0 Resistance RA 3.6 Effective Capacitance (Note 1) Ceff 10.4 pF Inductance Capacitance (Note 2) Cut−Off Frequency (Note 3) Above this frequency, appreciable attenuation occurs L 22.1 nH Cline 33 pF f3dB 350 MHz 1. Refer to “Effective Capacitance Calculation” below. 2. Measured at 25°C, VR = 0 V, f = 1.0 MHz. 3. 50 source and 50 load termination. Effective Capacitance Calculation CEffective + The capacitance of the NUF2900MN can be determined a number of ways. When evaluated using low frequency, low current capacitance measurement equipment CLINE (line capacitance), it is determined to be approximately 33 pF. When used in systems that have signal rise and fall times of 1 ns or less CEFFECTIVE (effective capacitance), it is closer to 10.4 pF. If the rise and fall times of a signal is determined by the capacitance of the NUF2900MN, then an “effective” capacitance can be calculated using the following function based on a simple “RC” combination. ǒ R *t V lnǒ1 * VOUTǓ IN * 1.08ns CEffective + 50 ln(1 * 0.88) NUF2900MN RSource VOUT VIN + CEffective Ǔ *t V OUT + V IN 1 * e R TerminationC Effective RTermination VSource The rise time “t” is approximately 1.08 ns with VOUT ∼ 88% of VIN where the network impedance is 50 . When solving for CEFFECTIVE, the capacitance is found to be 10.4 pF. If the data signal source has a rise and fall time slower than 1 ns, the NUF2900MN will have a filtered output with a similar rise and fall time. CEFFECTIVE will scale accordingly as rise/fall times increase until it reaches CLINE. http://onsemi.com 2 NUF2900MN TYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise specified) 0 0 −5 −10 −20 S41 (dB) −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −30 −40 −50 −60 −70 10 100 1000 −80 100 10,000 1000 FREQUENCY (MHz) 10000 FREQUENCY (MHz) Figure 2. Analog Crosstalk Curve (S41 Measurement − 50 W Load) Figure 1. Typical Insertion Loss Characteristic (S21 Measurement) 1.50 1.00 GD12 (nsec) S21 (dB) −10 0.50 0 −0.50 −1.00 −1.50 1.0E+05 1.0E+06 1.0E+07 1.0E+08 1.0E+09 1.0E+10 FREQUENCY (Hz) Figure 3. Actual High Speed (100 MHz) Pulse Wave Form of NUF2900MN Figure 4. Group Delay Characteristics Simulation for NUF2900MN Figure 5. ESD Scope Trace − IEC Waveform Actual Response of NUF2900MN http://onsemi.com 3 NUF2900MN PACKAGE DIMENSIONS DFN8 CASE 506AA−01 ISSUE D D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 0.10 C TOP VIEW 0.08 C SEATING PLANE MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 2.00 BSC 1.10 1.30 2.00 BSC 0.70 0.90 0.50 BSC 0.20 −−− 0.25 0.35 A 0.10 C 8X DIM A A1 A3 b D D2 E E2 e K L E (A3) SIDE VIEW A1 C D2 e e/2 4 1 8X L E2 K 8 5 8X b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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