Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 ■ Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7±0.1 +0.3 ● 0.7–0.2 ● (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –10 A +0.2 IC –5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.45–0.1 1.27 1 Collector current +0.2 0.45–0.1 1.27 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 3.2 ■ Absolute Maximum Ratings 13.5±0.5 2.54±0.15 (Ta=25˚C) Symbol Parameter Conditions min Collector cutoff current ICBO VCB = –10V, IE = 0 Emitter cutoff current IEBO VEB = –5V, IC = 0 Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 Forward current transfer ratio hFE*1 VCE = –2V, IC = –2A*2 90 Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = –0.1A*2 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz typ FE Unit nA –100 nA V V 625 –1 120 V MHz 85 *2 *1h max –100 pF Pulse measurement Rank classification Rank P Q R hFE 90 ~ 135 120 ~ 205 180 ~ 625 1 2SB873 Transistor PC — Ta IC — VCE 1.2 IC — VBE –6 –12 VCE=–2V –5 0.8 0.6 0.4 0.2 –25mA –4 –20mA –15mA –3 –10mA –2 –5mA –25˚C –6 –4 –2 0 40 60 80 100 120 140 160 0 0 –2 –4 –12 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.1 – 0.03 –1 –3 25˚C 400 –25˚C 300 200 100 Cob — VCB –3 –10 120 100 80 –10 –3 Single pulse Ta=25˚C ICP IC t=10ms t=1s –1 – 0.3 60 – 0.1 40 – 0.03 20 –10 –30 –100 Collector to base voltage VCB (V) – 0.01 – 0.1 – 0.3 –1 –3 200 160 120 80 40 –10 –30 1 3 10 30 Emitter current IE (mA) –30 Collector current IC (A) 140 –2.0 0 –1 Area of safe operation (ASO) –100 IE=0 f=1MHz Ta=25˚C –1.6 VCB=–6V Ta=25˚C Ta=75˚C Collector current IC (A) 160 –1.2 240 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 200 – 0.8 fT — I E 500 Collector current IC (A) –3 – 0.4 Base to emitter voltage VBE (V) VCE=–2V Forward current transfer ratio hFE –30 0 –1 0 600 IC/IB=30 180 –10 hFE — IC –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –8 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –6 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Ta=75˚C –8 –1mA 0 Collector output capacitance Cob (pF) 25˚C –10 –30mA –1 0 2 –35mA Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IB=–40mA –100 Collector to emitter voltage VCE (V) 100