2SB1123 / 2SD1623 Ordering number : EN1727E SANYO Semiconductors DATA SHEET 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • • Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization. Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)60 (--)50 V (--)6 V Collector Current VEBO IC (--)2 A Collector Current (Pulse) ICP (--)4 A Collector Dissipation PC 0.5 W Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Mounted on a ceramic board (250mm2✕0.8mm) V 1.3 W 150 °C --55 to +150 °C Marking 2SB1123 : BF 2SD1623 : DF Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010EA TK IM / N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS No.1727-1/5 2SB1123 / 2SD1623 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)50V, IE=0A (--)100 nA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA hFE1 VCE=(--)2V, IC=(--)100mA hFE2 VCE=(--)2V, IC=(--)1.5A Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA Output Capacitance Cob VCB=(--)10V, f=1MHz (22)12 Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA (--0.3)0.15 (--0.7)0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1A, IB=(--)50mA (--)0.9 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton IE=(--)10μA, IC=0A See specified Test Circuit. Storage Time tstg See specified Test Circuit. (450)550 ns Fall Time tf See specified Test Circuit. (30)30 ns DC Current Gain *: The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 Package Dimensions unit : mm (typ) 7007B-004 140 to 280 200 to 400 100* 560* 40 150 MHz pF (--)6 V (60)60 ns U 280 to 560 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 VR RB OUTPUT IB2 RL=50Ω 50Ω + 100μF --5V + 470μF 25V IC=10IB1= --10IB2=500mA (For PNP, the polarity is reversed) No.1727-2/5 2SB1123 / 2SD1623 IC -- VCE --2.4 50 Collector Current, IC -- A A m --20 --1.6 --10mA --1.2 --8mA --6mA --0.8 --4mA --2mA 0 --0.4 --0.8 --1.2 --1.6 --1000 0.8 4mA 2mA IB=0mA 0.4 --4mA --3mA --2mA --400 --1mA 1.2 1.6 2.0 --200 2SD1623 Pulse 7mA 6mA 5mA 800 4mA 600 3mA 2mA 400 1mA 200 IB=0mA 0 0 --2 --4 --6 --8 --10 0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE -- V ITR08893 IC -- VBE --1200 IB=0mA 0 --12 Collector-to-Emitter Voltage, VCE -- V 2SD1623 VCE=2V 1000 Collector Current, IC -- mA --1000 Collector Current, IC -- mA 12 ITR08894 IC -- VBE 1200 2SB1123 VCE= --2V --800 --600 --400 --200 800 600 400 200 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 0 0.6 0.8 3 3 DC Current Gain, hFE 5 100 7 5 1.2 ITR08896 2SD1623 VCE=2V 7 2 1.0 hFE -- IC 1000 5 2 100 7 5 3 3 2 2 10 --10 0.4 Base-to-Emitter Voltage, VBE -- V 2SB1123 VCE= --2V 7 0.2 ITR08895 hFE -- IC 1000 DC Current Gain, hFE 2.4 ITR08892 IC -- VCE 1200 1000 --600 0.8 Collector-to-Emitter Voltage, VCE -- V ITR08891 --5mA --800 8mA 0 2SB1123 Pulse --6mA 15mA 1.2 --2.4 IC -- VCE --7mA 1.6 0 --2.0 Collector-to-Emitter Voltage, VCE -- V --1200 25mA 0.4 IB=0mA 0 2SD1623 Pulse A 40m 2.0 A 0m --5 --0.4 Collector Current, IC -- mA mA Collector Current, IC -- mA Collector Current, IC -- A --2.0 IC -- VCE 2.4 2SB1123 Pulse 10 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 3 5 ITR08897 10 2 3 5 7 100 2 3 5 7 1000 Collector Current, IC -- mA 2 3 5 ITR08898 No.1727-3/5 2SB1123 / 2SD1623 f T -- IC 7 5 3 2 100 7 5 3 2 10 --10 3 5 7 --100 2 3 5 7 --1000 2 3 2 100 7 5 3 2 10 2 3 5 7 100 2 3 5 7 1000 2SD1623 f=1MHz Output Capacitance, Cob -- pF 7 7 5 3 2 10 3 ITR08900 Cob -- VCB 100 100 2 Collector Current, IC -- mA ITR08899 2SB1123 f=1MHz Output Capacitance, Cob -- pF 5 3 Cob -- VCB 2 5 3 2 10 7 7 5 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 5 1.0 7 --100 ITR08901 3 5 7 2 10 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 5 2 --1.0 5 2 --0.1 5 2 7 100 ITR08902 2SD1623 IC / IB=20 5 --10 5 VCE(sat) -- IC 100 2SB1123 IC / IB=20 5 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --100 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SD1623 VCB=10V 7 10 2 Collector Current, IC -- mA 2 10 5 2 1.0 5 2 0.1 5 2 --0.01 --10 0.01 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 3 10 2 3 5 7 2 100 3 5 7 1000 Collector Current, IC -- mA ITR08903 ASO 10 2 3 ITR08904 PC -- Ta 0.8 2SB1123 / 2SD1623 2SB1123 / 2SD1623 ICP=4A 1m 3 s IC=2A 2 5 3 op era 2 tio ms DC 10 s 0m 10 1.0 0.1 Collector Dissipation, PC -- W 5 Collector Current, IC -- A f T -- IC 1000 2SB1123 VCB=10V Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 1000 n Ta=25°C Single pulse For PNP, minus sign is omitted Mounted on a ceramic board (250mm2✕0.8mm) 5 3 2 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 0.6 0.5 0.4 No he at sin k 0.2 0 5 7 100 ITR08906 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04221 No.1727-4/5 2SB1123 / 2SD1623 PC -- Ta 1.6 2SB1123 / 2SD1623 Collector Dissipation, PC -- W 1.4 1.3 M 1.2 ou nte do na 1.0 ce ram ic 0.8 bo ard (2 0.6 50 mm 0.4 ✕0 2 .8m m) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04222 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.1727-5/5