HITACHI 2SD1970

2SD1970
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3
1
ID
1. Emitter
2. Collector
3. Base
2
3
32 kΩ
(Typ)
0.4 kΩ
(Typ)
1
2SD1970
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
24
V
Collector to emitter voltage
VCEO
24
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
2
A
Collector peak current
I C(peak)
4
A
C to E diode forward current
ID
2
A
10
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CEO
24
—
32
V
I C = 1 mA, IE = 0
Collector to emitter sustain
voltage
VCEO(sus)
25
—
33
V
I C = 1 A, L = 20 mH, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 5 mA, IC = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 20 V, IE = 0
I CEO
—
—
5
µA
VCE = 20 V, RBE = ∞
hFE
7000
—
30000
hFE
2000
—
—
—
VCE = 2 V, IC = 2 A*1
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
I C = 2 A, IB = 2 mA*1
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
V
I C = 2 A, IB = 2 mA*1
C to E diode forward voltage
VD
—
—
2.0
V
I D = 2 A*1
DC current transfer ratio
Note:
2
1. Pulse test.
VCE = 2 V, IC = 0.5 A*1
2SD1970
Maximum Collector Dissipation Curve
Area of Safe Operation
10
Collector current IC (A)
iC (peak)
8
4
3
1.0
0.3
0.1
0.03
0
50
100
Case temperature TC (°C)
Typical Transfer Characteristics
70
60
50
1.2
40
0.8
30 µA
Ta = 25°C
Pulse
0.4
0.3
1.0
3
10
30
100
Collector to emitter voltage VCE (V)
2.0
Collector current IC (A)
Collector current IC (A)
1.6
90
80
Ta = 25°C
1 shot pulse
0.01
0.1
150
Typical Output Characteristics
2.0
IC (max)
ms
=1
PW
s
n
10 m
tio
ra )
pe °C
O 25
C
D C=
(T
Collector power dissipation Pc (W)
12
1.6
VCE = 2 V
Pulse
Ta = 25°C
1.2
0.8
0.4
IB = 0
0
1
2
3
4
5
Collector to emitter voltage VCE (V)
0
0.4
0.8
1.2
1.6
Base to emitter voltage VBE (V)
2.0
3
DC Current Transfer Ratio
vs. Collector Current
DC current transfer ratio hFE
100,000
30,000
10,000
–25
Ta = 75°C 25
Pulse
3,000
1,000
VCE = 2 V
300
100
0.01 0.03 0.1 0.3
1.0
3
Collector current IC (A)
10
Collector to emitter saturation voltage\ VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
2SD1970
Saturation Voltage vs. Collector Current
10
3
VBE (sat)
1.0
VCE (sat)
0.3
0.1
0.01 0.03
0.1 0.3
1.0
3
Collector current IC (A)
Typical Characteristics of
Emitter to Collector Diode
2.0
Diode current ID (A)
Ta = 25°C
Pulse
1.6
1.2
0.8
0.4
0
0.4
0.8
1.2
1.6
2.0
Emitter to collector diode forward voltage VECF (V)
4
lC = 100 lB
Ta = 25°C
Pulse
10
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
12
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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