2SJ130(L), 2SJ130(S) Silicon P-Channel MOS FET ADE-208-1181 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SJ130(L), 2SJ130(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –300 V Gate to source voltage VGSS ±20 V Drain current ID –1 A Drain peak current I D(pulse) –2 A Body to drain diode reverse drain current I DR –1 A 1 Channel dissipation Pch* 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –300 — — V I D = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — –100 µA VDS = –240 V, VGS = 0 Gate to source cutoff voltage VGS(off) –2.0 — –4.0 V I D = –1 mA, VDS = –10 V Static drain to source on state resistance RDS(on) — 6.0 8.5 Forward transfer admittance |yfs| 0.25 0.4 — S I D = –0.5 A, VDS = –20 V*1 Input capacitance Ciss — 235 — pF VDS = –10 V, VGS = 0, Output capacitance Coss — 65 — pF f = 1 MHz Reverse transfer capacitance Crss — 16 — pF Turn-on delay time t d(on) — 10 — ns I D = –0.5 A, VGS = –10 V, Rise time tr — 25 — ns RL = 60 Turn-off delay time t d(off) — 35 — ns Fall time tf — 45 — ns Body to drain diode forward voltage VDF — –0.9 — V I F = –1 A, VGS = 0 Body to drain diode reverse recovery time t rr — 200 — ns I F = –1 A, VGS = 0, diF/dt = 50 A/µs Note: 2 1. Pulse test I D = –0.5 A, VGS = –10 V*1 2SJ130(L), 2SJ130(S) Power vs. Temperature Derating Maximum Safe Operation Area –5 20 10 50 100 150 –1.2 –0.8 –0.4 0 pe ra 10 tio m s (T C –0.2 –0.05 –5 Operation in this area is limited by RDS (on) (1 = Sh ot ) 25 °C ) Ta = 25°C –10 –20 –50 –100 –200 –500 Drain to Source Voltage VDS (V) Typical Transfer Characteristics –2.0 –10 V –25°C –6 V Pulse Test –5 V VGS = –4 V –10 –30 –40 –20 –50 Drain to Source Voltage VDS (V) TC = 25°C –1.6 Drain Current ID (A) –1.6 –7 V = O n Typical Output Characteristics –15 V C –0.5 Case Temperature TC (°C) –2.0 PW D –1.0 –0.1 0 Drain Current ID (A) 10 µs 10 0 µs 1 m s –2 Drain Current ID (A) Channel Dissipation Pch (W) 30 VDS = –20 V Pulse Test 75°C –1.2 –0.8 –0.4 0 –2 –6 –8 –10 –4 Gate to Source Voltage VGS (V) 3 4 Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage –20 Pulse Test –16 ID = –2 A –12 –8 –1 A –4 –0.5 A 0 –4 –12 –16 –8 Gate to Source Voltage VGS (V) VGS = –10 V Pulse Test ID = –2 A 12 –1 A 8 –0.5 A 4 0 –40 0 80 120 40 Case Temperature TC (°C) 50 Pulse Test 20 VGS = –10 V 10 5 –15 V 2 1.0 0.5 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Drain Current ID (A) –5 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 20 16 –20 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 2SJ130(L), 2SJ130(S) 160 5 2 VDS = –20 V Pulse Test –25°C Ta = 25°C 1.0 0.5 75°C 0.2 0.1 0.05 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 Drain Current ID (A) –2 2SJ130(L), 2SJ130(S) Typical Capacitance vs. Drain to Source Voltage 1,000 5 VGS = 0 f = 1 MHz TC = 25°C VDS = –20 V ID = –0.5 A 2 Ciss Capacitance C (pF) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Frequency 1 0.5 0.2 100 Coss Crss 10 0.1 0.05 0.2 M 1 0.5 M 1.0 M 2 M 5M Frequency f (Hz) 0 10 M 20 M –4 VDD = –200 V –100 V –200 VDS –8 –50 V –12 –300 VGS –16 –400 ID = –1 A –500 0 4 8 12 16 Gate Charge Qg (nc) –20 20 50 Switching Time t (ns) –100 100 0 Gate to Source Voltage VGS (V) RDrain to Source VDS (V) VDD = –50V –100 V –200 V –50 Switching Characteristics Dynamic Input Characteristics 0 –20 –10 –30 –40 Drain to Source Voltage VDS (V) tf td (off) 20 10 tr td (on) 5 2 VGS = –10 V PW = 2 µs duty < 1% . VDD =. 30 V 1 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Drain Current ID (A) –5 5 2SJ130(L), 2SJ130(S) Reverse Drain Current vs. Source To Drain Voltage Reverse Dratin Current IDR (A) –2.0 VGS = 0 Pulse Test –1.6 –1.2 –0.8 –0.4 –5 V, –10 V VGS = 0, 10 V 0 Normalized Transient Thermal Impedance γS (t) 0 –2.0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.2 0.1 0.05 θch–c (t) = γS (t) · θch–c θch–c = 6.25°C/W, TC = 25°C 0.1 PDM 0.02 0.03 0.01 Pulse hot 1S 0.01 10 µ T 100 µ 1m 10 m Pulse Width PW (s) 100 m PW D = PW T 1 10 Waveforms Switching Time Test Circuit Vin Vin Monitor 10% Vout Monitor 90% D.U.T RL 50 Ω Vin –10 V 6 VDD . =. –30 V 90% 90% Vout 10% td (on) tr 10% td (off) tf 2SJ130(L), 2SJ130(S) Package Dimensions As of January, 2001 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.29 ± 0.5 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(1) — Conforms 0.42 g 7 2SJ130(L), 2SJ130(S) As of January, 2001 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 8 DPAK (S)-(1),(2) — Conforms 0.28 g 2SJ130(L), 2SJ130(S) Cautions 1. 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