RENESAS 2SJ317

2SJ317
Silicon P Channel MOS FET
REJ03G0857-0200
(Previous: ADE-208-1191)
Rev.2.00
Sep 07, 2005
Description
High speed power switching
Low voltage operation
Features
• Very low on-resistance
• High speed switching
• Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK R )
D
3
2
1
1. Gate
2. Drain
3. Source
4. Drain
G
4
S
Note: Marking is “NY”.
*UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep 07, 2005 page 1 of 6
2SJ317
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Symbol
VDSS
Value
–12
Unit
V
VGSS
ID
–7
±2
V
A
±4
2
A
A
1
150
W
°C
–55 to +150
°C
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel temperature
Pch
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
–12
Typ
—
Max
—
Unit
V
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±7
—
—
—
—
±5
V
µA
IG = ±10 µA, VDS = 0
VGS = ±6.5 V, VDS = 0
IDSS
VGS (off)
—
–0.4
—
—
–1
–1.4
µA
V
VDS = –8 V, VGS = 0
ID = –100 µA, VDS = –5 V
RDS (on) 1
RDS (on) 2
—
—
0.4
0.28
0.7
0.35
Ω
Ω
ID = –0.5 A, VGS = –2.2 V
Note 3
ID = –1 A, VGS = –4 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
1.0
—
2.3
63
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
180
23
—
—
pF
pF
ID = –1 A, VDS = –5 V
VDS = –5 V
VGS = 0
f = 1 MHz
Turn-on delay time
Turn-off delay time
td (on)
td (off)
—
—
500
2860
—
—
ns
ns
ID = –0.2 A
Vin = –4 V, RL = 51 Ω
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Note:
3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
Test Conditions
ID = –1 mA, VGS = 0
Note 3
Note 3
2SJ317
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
–10
ID (A)
PW = 1 ms (1 shot)
1.0
0
50
100
150
–0.3
–0.1
–0.03
Ta = 25°C
–0.01
–0.1 –0.3
–1
200
Ambient Temperature Ta (°C)
–10
–4 V
–3 V
VDS (V)
–2.5 V
–2 V
Tc = –25°C
ID (A)
Pulse Test
–4
–3
–4
75°C
25°C
–3
–2
–1.5 V
–1
–2
–1
VDS = –5 V
Pulse Test
VGS = –1 V
0
–2
–4
–6
–8
Drain to Source Voltage
0
–10
10
Tc = –25°C
5
2
25°C
1
75°C
0.5
VDS = –5 V
Pulse Test
0.2
–0.1 –0.2
–0.5
–1
–2
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
–5
–10
–1
–2
–3
–4
–5
VGS (V)
Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
20
0
Gate to Source Voltage
VDS (V)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
–100
Typical Foward Transfer Characteristics
Drain Current
–5 V
0
–30
–5
–5
ID (A)
–3
Drain to Source Voltage
Typical Output Characteristics
Drain Current
Operation in
this area is
limited by RDS (on)
)
°C
25
0
–1
c=
(T
0.5
–3
n
tio
ra
pe
O
Drain Current
1.5
DC
Channel Dissipation Pch (W)
(on the alumina ceramic board)
2.0
10
Pulse Test
5
2
1
0.5
–3 V
VGS = –2 V
–4 V
0.2
0.1
–0.1 –0.2
–0.5
–1
Drain Current
–2
ID (A)
–5
–10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Temperature
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
2SJ317
–0.5
Pulse Test
–0.4
ID = –1 A
–0.3
–0.2
–0.5 A
–0.1 A
–0.1
–0.2 A
0
0
–1
–2
–3
Gate to Source Voltage
–4
–5
1.0
Pulse Test
0.8
ID = –2 A
0.6
VGS = –2.5 V
0.2
0
–25
0
25
50
75
Case Temperature
100
Tc (°C)
Switching Time vs. Drain Current
2000
tf
1000
Switching Time t (ns)
Reverse Recovery Time trr (ns)
–2 A
–1 A, 0.5 A
–4 V
VGS (V)
2000
500
200
100
50
di / dt = 10 A / µs
VGS = 0
20
–0.1 –0.2
–0.5
–1
–2
Reverse Drain Current
–5
1000
50
–0.05 –0.1 –0.2
–10
–10
–4
–2
–5
VDS
0
0
4
Gate Charge
Rev.2.00 Sep 07, 2005 page 4 of 6
6
8
Qg (nc)
–1
–2
–5
ID (A)
10
VGS (V)
1000
VGS = 0
f = 1 MHz
500
Capacitance C (pF)
–6
Gate to Source Voltage
–8
VGS
2
–0.5
Typical Capacitance vs.
Drain to Source Voltage
–10
0
td(on)
Drain Current
VDD = –10 V
ID = –2 A
–20 Pulse test
–15
tr
VGS = –4 V
200 VDD = –10 V
PW = 5 µs
Duty cycle ≤ 1 %
100
IDR (A)
–25
td(off)
500
Dynamic Input Characteristics
VDS (V)
–0.5 A
0.4
Reverse Recovery Time vs.
Recovery Time
Drain to Source Voltage
–1 A
Coss
200
100
Ciss
50
Crss
20
10
–0.1 –0.2
–0.5
–1
–2
–5
–10
Drain to Source Voltage VDS (V)
2SJ317
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
–4
Pulse Test
VGS = –4 V
–3
–2.5 V
–2
–1
VGS = 0
0
0
–0.5
–1.0
Source to Drain Voltage
Rev.2.00 Sep 07, 2005 page 5 of 6
–1.5
VSD
–2.0
(V)
2SJ317
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]
PLZZ0004CA-A
UPAK / UPAKV
0.050g
1.5 1.5
3.0
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
(1.5)
0.44 Max
(0.2)
0.53 Max
0.48 Max
0.8 Min
φ1
0.4
4.5 ± 0.1
1.8 Max
Unit: mm
(2.5)
SC-62
(0.4)
JEITA Package Code
Ordering Information
Part Name
2SJ317NYTL-E
2SJ317NYTR-E
Quantity
1000 pcs
1000 pcs
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
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