2SK1317 Silicon N Channel MOS FET REJ03G0929-0200 (Previous: ADE-208-1268) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 S 2 3 2SK1317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Ratings 1500 Unit V VGSS ID ±20 2.5 V A 7 2.5 A A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current ID(pulse) IDR *1 *2 Channel dissipation Channel temperature Pch Tch 100 150 W Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Tstg –55 to +150 °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 1500 Typ — Max — Unit V Test conditions ID = 10 mA, VGS = 0 Gate to source leak current Zero gate voltage drain current IGSS IDSS — — — — ±1 500 µA µA VGS = ±20 V, VDS = 0 VDS = 1200 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 2.0 — — 9 4.0 12 V Ω ID = 1 mA, VDS = 10 V 3 ID = 2 A, VGS = 15 V * Forward transfer admittance Input capacitance |yfs| Ciss 0.45 — 0.75 990 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 125 60 — — pF pF ID = 1 A, VDS = 20 V * VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time Rise time td(on) tr — — 17 70 — — ns ns Turn-off delay time Fall time td(off) tf — — 110 60 — — ns ns Body to drain diode forward voltage Body to drain diode reverse recovery time VDF trr — — 0.9 1750 — — V ns Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 3 ID = 2 A, VGS = 10 V, RL = 15 Ω IF = 2 A, VGS = 0 IF = 2 A, VGS = 0, diF/dt = 100 A/µs 2SK1317 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating Drain Current ID (A) 10 80 40 PW D C 1.0 0 1 = O 10 pe ra s n 0.3 µs m s tio m µs (1 (T C = 0.1 Sh ot ) 25 °C ) Operation in this area is limited by RDS (on) Ta = 25°C 0 50 100 4 0.01 10 150 30 100 300 1,000 3,000 10,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 5 Drain Current ID (A) 10 10 3 0.03 2.0 15 V 10 V Pulse Test 8V Drain Current ID (A) Channel Dissipation Pch (W) 120 7V 3 6V 2 5V 1 VDS = 20 V Pulse Test 1.6 1.2 0.8 75°C TC = 25°C 0.4 –25°C VGS = 4 V 20 40 60 80 2 6 4 10 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 40 ID = 3 A 30 2A 20 1A 10 0.5 A 0 0 100 4 8 12 16 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 20 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 0 50 20 VGS = 10 V 15 V 10 5 2 1.0 0.5 0.1 Pulse Test 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 20 ID = 2 A 16 VGS = 15 V Pulse Test 0.5 A, 1 A 12 8 4 0 –40 40 0 80 120 160 Reverse Recovery Time t rr (ns) VDS = 20 V Pulse Test 5 2 –25°C Ta = 25°C 75°C 1.0 0.5 0.2 0.1 0.05 0.1 0.5 0.2 1.0 5 2 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10,000 5,000 VGS = 0 f = 1 MHz Capacitance C (pF) 2,000 1,000 500 100 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 0.5 0.2 2 1.0 5 0 20 10 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 VDD = 250 V 400 V 600 V 16 VGS VDS 12 8 400 VDD = 600 V 4 400 V 250 V ID = 2.5 A 0 0 Coss Reverse Drain Current IDR (A) 800 200 100 10 0.1 1,000 600 Ciss 1,000 Crss 20 40 60 80 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 100 1,000 Gate to Source Voltage VGS (V) 200 50 0.05 Drain to Source Voltage VDS (A) 10 Case Temperature TC (°C) • VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% • 500 Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1317 td (off) 200 100 tf 50 tr td (on) 20 10 0.05 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 2SK1317 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 5 Pulse Test 4 3 2 1 10 V, 15 V VGS = 0, –5 V 0 0.4 0 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch–c (t) = γS (t) • θch–c θch–c = 1.25°C/W, TC = 25°C PDM 0.02 0.03 0.01 Pulse hot 1S 0.01 10 µ T 100 µ 1m 10 m 100 m D = PW T PW 1 10 Pulse Width PW (S) Waveforms Switching Time Test Circuit Vin Monitor 90% Vout Monitor Vin 10% D.U.T RL 50 Ω Vin 10 V Rev.2.00 Sep 07, 2005 page 5 of 6 VDD = 30 V Vout 10% 90% td (on) tr 10% 90% td (off) tf 2SK1317 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1317-E Quantity 360 pcs Shipping Container Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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