2SK2203 Silicon N-Channel MOS FET ADE-208-139 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain 3. Source 2SK2203 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 50 A 200 A 50 A 50 A 214 mJ Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR Avalanche current Avalanche energy I AP * 3 EAR* 3 2 1 Channel dissipation Pch* 60 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω 2 2SK2203 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µA VDS = 50 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 0.007 0.01 Ω I D = 25 A VGS = 10 V*1 — 0.009 0.013 Ω I D = 25 A VGS = 4 V*1 Forward transfer admittance |yfs| 40 65 — S I D = 25 A VDS = 10 V*1 Input capacitance Ciss — 8330 — pF VDS = 10 V Output capacitance Coss — 3500 — pF VGS = 0 Reverse transfer capacitance Crss — 550 — pF f = 1 MHz Turn-on delay time t d(on) — 50 — ns I D = 25 A Rise time tr — 270 — ns VGS = 10 V Turn-off delay time t d(off) — 1400 — ns RL = 1.2 Ω Fall time tf — 560 — ns Body to drain diode forward voltage VDF — 0.95 — V I F = 50 A, VGS = 0 Body to drain diode reverse recovery time t rr — 150 — ns I F = 50 A, VGS = 0, diF / dt = 50 A / µs Note 1. Pulse Test 3 2SK2203 Power vs. Temperature Derating I D (A) 60 300 40 20 PW 30 DC 10 50 100 150 200 t) Ta = 25 °C 1 10 20 2 5 50 100 Drain to Source Voltage V DS (V) Typical Transfer Characteristics 50 (A) 10 V 6V 4V 40 3V ID 3.5 V ho C) Tc (°C) 60 Drain Current I D (A) Drain Current 80 1s 5° Typical Output Characteristics 100 s( ati Operation in on this area is (T c= limited by R DS(on) 2 1 Case Temperature =1 0m Op er 3 0 10 µs 10 0µ s 1m s 100 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 1000 80 40 VGS = 2.5 V 20 30 V DS = 10 V Pulse Test –25 °C Tc = 25 °C 75 °C 20 10 Pulse Test 0 4 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK2203 Static Drain to Source State Resistance vs. Drain Current 0.6 Drain to Source On State Resistance R DS(on) ( Ω ) V DS(on) (V) 1.0 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 I D = 50 A 0.4 0.05 Pulse Test 0.02 0.01 4V 0.005 VGS = 10 V 0.002 20 A 0.2 0.0005 2 4 6 Gate to Source Voltage 8 Pulse Test 0.04 0.03 I D = 50 A V GS = 4 V 0.01 0 –40 3 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.05 0.02 1 10 10 A 10 A 20 A 20 A 10 V 50 A 0 40 80 120 160 Case Temperature Tc (°C) 10 30 100 300 Drain Current I D (A) 1000 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 0 Static Drain to Source on State Resistance R DS(on) ( Ω) 0.001 10 A 100 –25 °C 30 Tc = 25 °C 10 75 °C 3 1 V DS = 10 V Pulse Test 0.3 0.1 0.1 0.3 1 3 10 30 100 Drain Current I D (A) 5 2SK2203 Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time 100000 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 200 100 50 20 VGS = 0 f = 1 MHz 100 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 12 VDS I D = 50 A 40 V DD = 10 V 25 V 50 V 80 160 240 320 Gate Charge Qg (nc) 8 4 0 400 Switching Time t (ns) 16 V GS (V) V DD = 10 V 25 V 50 V 30 40 50 5000 Gate to Source Voltage V DS (V) Drain to Source Voltage 6 VGS 20 Switching Characteristics 20 80 10 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 100 0 1000 Crss 5 0.1 20 Coss di / dt = 50 A / µs V GS = 0, Ta = 25 °C 10 60 Ciss 10000 2000 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % t d(off) 1000 500 tf 200 tr 100 50 0.1 t d(on) 0.3 1 3 Drain Current 10 30 I D (A) 100 2SK2203 Reverse Drain Current vs. Souece to Drain Voltage Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 100 Pulse Test 80 10 V 60 5V V GS = 0, –5 V 40 20 0 0.4 0.8 1.2 Drain to Source Voltage 1.6 250 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 Ω 200 150 100 2.0 50 0 25 V DS (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform V DS Monitor EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin –15 V 50Ω 0 VDD 7 Normalized Transient Thermal Impedance γS (t) 2SK2203 Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 θch–c (t) = γS (t) · θch–c θch–c = 2.08°C/W, TC = 25°C 0.1 0.1 0.03 0.01 10 µ 0.05 PDM 0.02 0.01 se Pul hot S 1 T 100 µ 1m 10 m Pulse Width PW (s) PW 100 m Switching Time Test Circuit 1 10 Waveform Vout Monitor Vin Monitor D = PW T 90% D.U.T. RL Vin Vin 10 V 50Ω V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 15.6 ± 0.3 5.5 ± 0.3 5.0 1.6 1.4 Max 3.2 21.0 ± 0.5 4.0 2.6 1.4 Max 2.7 19.9 ± 0.3 φ3.2 + 0.4 – 0.2 5.0 ± 0.3 Unit: mm 1.0 ± 0.2 5.45 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PFM — — 5.6 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. 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