Phototransistors PNZ108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05 Fast response : tr = 5 µs (typ.) 2.54±0.25 Small size (low in height) package 5 .1 1. 0± 0. 15 0 0± 1. Signal mixing capability using base pin Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3 V Emitter to base voltage VEBO 5 V Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 3˚ ø5.75 max. ø4.2±0.2 45± Absolute Maximum Ratings (Ta = 25˚C) 3 1 2 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle *2 VCE = 10V, L = 500 lx*1 min 3.5 typ max Unit 0.05 2 µA 6 mA λP VCE = 10V 900 nm θ Measured from the optical axis to the half power point 80 deg. 5 µs Rise time tr*2 VCC = 10V, ICE(L) = 5mA Fall time tf*2 RL = 100Ω Collector saturation voltage *1 ICE(L) *3 Conditions VCE = 10V VCE(sat) µs 6 ICE(L) = 1mA, L = 1000 lx*1 0.3 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,,,, ,, 50Ω *3 I CE(L) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Classifications Class Q R S ICE(L) (mA) 3.5 to 6.0 5.0 to 9.1 > 7.5 Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D). 1 Phototransistors PNZ108CL ICE(L) — VCE 80 60 40 20 Ta = 25˚C T = 2856K 16 1000 lx 12 750 lx 8 500 lx 4 250 lx 20 40 60 80 0 100 Ta (˚C ) 0 4 8 10 1 10 –1 1 10 –1 20 40 60 Ambient temperature 80 S (%) 1 20 40 80 60 40 0 200 120 400 600 800 1000 tf — ICE(L) VCC = 10V Ta = 25˚C 10 4 50˚ 10 3 60˚ 70˚ 80˚ 90˚ 10 3 10 2 RL = 1kΩ 500Ω 10 10 2 RL = 1kΩ 500Ω 10 100Ω 100Ω 1 1 10 –1 10 –2 10 –1 1 Collector photo current 2 1200 Wavelength λ (nm) Ta (˚C ) VCC = 10V Ta = 25˚C 10 4 tr (µs) 40 80 tr — ICE(L) 30˚ Rise time 60 Relative sensitivity S (%) 80 0 Ambient temperature 40˚ 100 VCE = 10V Ta = 25˚C 20 Ta (˚C ) 20˚ 10 3 L (lx) Spectral sensitivity characteristics tf (µs) 10˚ 10 2 10 Illuminance 100 10 10 –1 – 40 100 1 VCE (V) VCE = 10V L = 500 lx T = 2856K Directivity characteristics 0˚ 10 –2 24 Relative sensitivity ICE(L) (mA) Collector photo current 10 0 20 ICE(L) — Ta 10 2 VCE = 10V 10 –2 – 20 16 Collector to emitter voltage ICEO — Ta 10 2 12 Fall time 0 Ambient temperature ICEO (µA) VCE = 10V Ta = 25˚C T = 2856K L = 1500 lx 100 lx 0 – 20 Dark current ICE(L) — L 10 2 Collector photo current ICE(L) (mA) 100 Collector photo current PC (mW) Collector power dissipation 20 ICE(L) (mA) PC — Ta 120 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA)