SANYO 2SK3822

2SK3822
Ordering number : ENN8014
N-Channel Silicon MOSFET
2SK3822
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
±20
V
52
A
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
PW≤10µs, duty cycle≤1%
208
A
1.65
W
Allowable Power Dissipation
PD
75
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
338
mJ
Avalanche Current *2
IAV
52
A
Tc=25°C
Note : *1 VDD=20V, L=200µH, IAV=52A
*2 L≤200µH, single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS(off)
yfs
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=26A
RDS(on)1
RDS(on)2
ID=26A, VGS=10V
ID=26A, VGS=4V
Ratings
min
typ
Unit
max
100
V
±10
µA
µA
2.6
V
19
25
mΩ
23
32
mΩ
1
1.2
24
Marking : K3822
40
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2404QA TS IM TB-00000330 No.8014-1/4
2SK3822
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input Capacitance
Ciss
pF
Coss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
6250
Output Capacitance
440
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
380
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
45
ns
Rise Time
tr
td(off)
See specified Test Circuit.
135
ns
See specified Test Circuit.
480
ns
tf
See specified Test Circuit.
180
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
VDS=50V, VGS=10V, ID=52A
117
nC
Gate-to-Source Charge
Qgs
VDS=50V, VGS=10V, ID=52A
20
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=50V, VGS=10V, ID=52A
25.8
Diode Forward Voltage
VSD
IS=52A, VGS=0
1.06
10.2
1.6
9.9
8.8
0.8
0.9
11.5
1.3
4.5
0.4
3
1 : Gate
2 : Drain
3 : Source
3
1.2
2.55
2.7
2
2.7
1
2.55
2
1.35
11.0
9.4
3.0
20.9
1.2
1
0.8
2.55
2.55
2.55
2.55
1.3
1.4
4.5
10.2
0.8
V
Package Dimensions
unit : mm
2090A
1.5max
8.8
Package Dimensions
unit : mm
2093A
nC
1.5
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
SANYO : SMP
Switching Time Test Circuit
Unclamped Inductive Test Circuit
VDD=50V
VIN
10V
0V
≥50Ω
RG
ID=26A
RL=1.92Ω
VIN
D
L
DUT
VOUT
PW=10µs
D.C.≤1%
15V
0V
G
50Ω
VDD
2SK3822
P.G
50Ω
S
No.8014-2/4
2SK3822
ID -- VGS
70
VDS=10V
4V
60
30
20
VGS=3V
30
20
10
25
10
40
°C --25°
C
40
50
5 °C
50
Tc=
7
Drain Current, ID -- A
Drain Current, ID -- A
10V
60
Tc= -2
25°C 5°C
6V
8V
Tc=25°C
75 ° C
ID -- VDS
70
0
0
1.0
1.5
2.0
2.5
3.0
3.5
Drain-to-Source Voltage, VDS -- V
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
40
35
Tc=75°C
25
20
25°C
15
--25°C
10
5
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
°C
25
10
=
Tc
7
5°C
--2
°C
75
5
3
2
1.0
7
5
0.1
3
5 7 1.0
2
3
5 7 10
2
3
4.5
IT07876
4V
S=
VG
A,
30
26
I D=
V
10
S=
VG
A,
20
26
I D=
10
--25
0
25
50
75
100
125
150
IT07878
IF -- VSD
VGS=0
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
5 7 100
IT07879
SW Time -- ID
1000
7
0
0.6
0.9
1.2
1.5
IT07880
Ciss, Coss, Crss -- VDS
10000
f=1MHz
VDD=50V
VGS=10V
td(off)
0.3
Diode Forward Voltage, VSD -- V
Ciss
7
5
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
4.0
0.01
2
Drain Current, ID -- A
3
2
tf
100
tr
7
3
2
1000
7
Coss
5
Crss
td(on)
5
3
0.1
3.5
40
100
7
5
3
2
5
2
3.0
Case Temperature, Tc -- °C
VDS=10V
3
2.5
50
0
--50
10
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
7
2.0
RDS(on) -- Tc
IT07877
yfs -- ID
100
1.5
60
45
2
1.0
Gate-to-Source Voltage, VGS -- V
ID=26A
30
0.5
IT07875
RDS(on) -- VGS
50
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
4.0
25°C
--25°C
0.5
Tc=75
°C
0
3
2
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5
7
IT07881
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT07882
No.8014-3/4
2SK3822
VGS -- Qg
10
8
7
6
5
4
3
3
2
40
60
80
100
2
3
5 7 1.0
Allowable Power Dissipation, PD -- W
1.5
1.0
0.5
3
5 7 10
2
3
5 7 100
2
IT07884
PD -- Tc
90
1.65
2
Drain-to-Source Voltage, VDS -- V
IT07883
PD -- Ta
2.0
Allowable Power Dissipation, PD -- W
120
s
10
m
0m s
op s
era
tio
n
10
Tc=25°C
Single pulse
0.1
0.1
0
Total Gate Charge, Qg -- nC
Operation in
this area is
limited by RDS(on).
3
2
0µ
s
1m
DC
10
7
5
1
20
ID=52A
3
2
1.0
7
5
10
µs
10
100
7
5
2
0
IDP=208A
3
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
ASO
5
VDS=50V
ID=52A
80
75
70
60
50
40
30
20
10
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07811
0
20
40
60
80
100
120
140
Case Temperature, Tc -- °C
160
IT07844
Note on usage : Since the 2SK3822 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
PS No.8014-4/4