2SK3922-01 FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Outline Drawings [mm] TFP Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Symbol V DS VDSX ID Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation ID(puls] VGS IAR Operating and storage temperature range Tch Tstg Ratings 120 90 ±67 ±6.3 ±268 ±30 67 719.1 EAS dV DS /dt dV/dt PD 27.0 20 5 2.02 270 +150 -55 to +150 Unit V V A A A V A Remarks VGS=-30V Foot Print Pattern Ta=25°C Note *1 Note *2 Equivalent circuit schematic mJ Note *3 mJ kV/μs kV/μs W W °C °C Note *4 VDS < = 120V Note *5 Ta=25°C Note*1 Tc=25°C Drain(D) Gate(G) Source(S) Note *1 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area:500mm2) Note *2 Tch< =150°C Note *3 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *4 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *5 IF < BVDSS, Tch < = 150°C = -ID, -di/dt=50A/μs, Vcc < = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD t rr Qrr Min. Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=120V VDS=96V VGS=±30V ID=33.5A VGS=0V VGS=0V VDS=0V VGS=10V Typ. 120 3.0 5.0 25 250 100 30.0 Tch=25°C Tch=125°C ID=33.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=33.5A VGS=10V 14 RGS=10 Ω VCC =60V ID=67A VGS=10V IF=67A VGS=0V Tch=25°C IF=67A VGS=0V -di/dt=100A/μs Tch=25°C Max. 24.6 28 1880 2820 360 540 30 45 20 30 35 53 50 75 23 35 52 78 16 24 18 27 1.10 1.50 150 0.9 Units V V μA nA mΩ S pF ns nC V ns μC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) *1 Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 0.463 87.0 52.0 Units °C/W °C/W °C/W 1 2SK3922-01 FUJI POWER MOSFET Characteristics 280 Allowable Power Dissipation PD=f(Tc) 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 240 4 200 3 PD [W] PD [W] 160 120 2 80 1 40 0 0 0 25 50 75 100 125 150 0 25 50 75 140 125 150 Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C 100 20V 120 100 Tc [°C] Tc [°C] 10V 100 7.5V ID[A] ID [A] 8.0V 80 10 60 7.0V 1 40 6.5V 6.0V 20 VGS=5.5V 0 0.1 0 1 2 3 4 5 6 0 7 1 2 3 4 VDS [V] 5 6 7 8 9 10 VGS[V] Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 100 0.20 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25 °C VGS=5.5V 6.0V 6.5V 7.0V 7.5V RDS(on) [ Ω ] 0.16 gfs [S] 10 0.12 0.08 1 0.04 10V 20V 0.1 0.1 0.00 1 10 ID [A] 100 0 20 40 60 80 100 120 ID [A] 2 2SK3922-01 0.08 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=33.5A,VGS=10V 7.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250μA 6.5 0.07 6.0 5.5 VGS(th) [V] RDS(on) [ Ω ] 0.06 0.05 0.04 max. max. 5.0 4.5 4.0 3.5 min. 3.0 0.03 2.5 typ. 2.0 0.02 1.5 1.0 0.01 0.5 0.0 0.00 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 Tch [°C] 14 50 75 100 125 150 Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=67A,Tch=25 °C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 Ciss 10 Vcc=60V 8 C [pF] VGS [V] 10 3 6 Coss 10 2 4 Crss 10 2 0 0 10 20 30 40 50 60 70 80 1 0 90 1 10 100 2 10 Qg [nC] 10 VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C tf 3 10 td(off) IF [A] 10 t [ns] 2 10 td(on) 1 tr 1 10 0.1 0.00 0 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 10 -1 10 0 1 10 2 10 ID [A] 3 2SK3922-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=67A 800 100 IAS=27A 90 Rth(ch-a) [°C/W] 700 600 EAV [mJ] 500 IAS=41A 400 IAS=67A 300 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB 80 70 60 50 40 30 200 20 100 0 10 0 25 50 75 100 125 0 150 starting Tch [°C] 3 Avalanche Current I AV [A] 10 0 1000 2000 3000 4000 5000 2 Drain Pad Area [mm ] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V 2 10 Single Pulse 1 10 0 10 -1 10 -8 10 10 -7 -6 10 10 -5 -4 10 10 -3 -2 10 tAV [sec] 1 10 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 10 -6 10 -5 -4 10 -3 10 -2 10 -1 10 0 10 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4