SANYO 2SK4164

2SK4164
Ordering number : ENA0736
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4164
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
Load switching applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
45
Gate-to-Source Voltage
VGSS
±20
V
ID
100
A
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
IDP
PD
PW≤10µs, duty cycle≤1%
Tc=25°C
V
400
A
50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
850
mJ
Avalanche Current *2
IAV
70
A
Note : *1 VDD=30V, L=200µH, IAV=70A
*2 L≤200µH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : K4164
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0V
VDS=45V, VGS=0V
VGS= ±16V, VDS=0V
Ratings
min
typ
Unit
max
45
V
µA
±10
µA
Continued on next page.
1
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51607QA TI IM TC-00000690 No. A0736-1/4
2SK4164
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
Forward Transfer Admittance
yfs
RDS(on)1
VDS=10V, ID=50A
46
Unit
max
2.6
V
77
S
2.5
3.3
mΩ
RDS(on)2
Ciss
ID=50A, VGS=10V
ID=50A, VGS=4V
3.6
5.0
mΩ
VDS=20V, f=1MHz
11500
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
1500
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
1200
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
70
ns
Rise Time
tr
td(off)
See specified Test Circuit.
1050
ns
See specified Test Circuit.
710
ns
tf
See specified Test Circuit.
650
ns
Static Drain-to-Source On-State Resistance
Input Capacitance
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
nC
Qgs
VDS=20V, VGS=10V, ID=100A
VDS=20V, VGS=10V, ID=100A
220
Gate-to-Source Charge
34
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=20V, VGS=10V, ID=100A
47
Diode Forward Voltage
VSD
IS=100A, VGS=0V
0.9
nC
1.2
V
Package Dimensions
unit : mm (typ)
7002-001
0.6
1.0
2.54
1
2
0.7
1.2
4.2
8.4
10.0
0.4
0.2
8.2
7.8
6.2
3
0.3
0.6
1.0
2.54
5.08
1 : Gate
2 : Source
3 : Drain
6.2
5.2
7.8
2.5
10.0
6.0
SANYO : ZP
Switching Time Test Circuit
Avalanche Resistance Test Circuit
VDD=20V
10V
0V
VIN
VIN
≥50Ω
VOUT
D
PW=10µs
D.C.≤1%
2SK4164
G
P.G
L
ID=50A
RL=0.4Ω
10V
0V
50Ω
S
50Ω
VDD
2SK4164
No. A0736-2/4
2SK4164
4V
160
80
VGS=3V
60
60
40
20
20
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
7
6
5
4
Tc=75°C
25°C
2
--25°C
1
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
10
5
=
Tc
10
--
°C
25
Source Current, IS -- A
2
°C
75
7
5
3
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
4V
S=
A, VG
0
5
I D=
10V
S=
0A, VG
5
=
ID
4
3
2
1
0
--25
50
100
125
150
IT12207
10
7
5
3
2
1.0
7
5
3
2
Tc=7
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
1.4
IT12209
Ciss, Coss, Crss -- VDS
3
f=1MHz
2
Ciss
2
Ciss, Coss, Crss -- pF
td(off)
10000
1000
7
tf
5
3
2
tr
100
7
5
3
Coss
Crss
2
1000
td(on)
7
7
5
0.1
75
IS -- VSD
0
VDD=20V
VGS=10V
3
25
VGS=0V
Single pulse
100
7
5
3
2
5 7 100
IT12208
SW Time -- ID
5
4.0
IT12205
5
0.1
7
5
3
2
0.01
2
1.0
0.1
3.5
6
3
2
°C
25
3.0
Case Temperature, Tc -- °C
VDS=10V
Single pulse
3
2.5
Single pulse
IT12206
yfs -- ID
100
2.0
RDS(on) -- Tc
0
--50
0
2
1.5
7
ID=50A
Single pulse
3
1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
8
0.5
IT12204
5°C
25°C
--25°C
0.1
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
40
0
Forward Transfer Admittance, yfs -- S
100
--25°
C
100
120
25°
C
120
140
Tc=
75°
C
Drain Current, ID -- A
V
10
Drain Current, ID -- A
140
0
Switching Time, SW Time -- ns
VDS=10V
Single pulse
180
160
7
Tc= -25°C
75°C
6V
8V
Tc=25°C
Single pulse
180
ID -- VGS
200
25 °
C
ID -- VDS
200
5
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT12210
0
5
10
15
25
20
Drain-to-Source Voltage, VDS -- V
30
IT12211
No. A0736-3/4
2SK4164
VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
50
100
150
200
Total Gate Charge, Qg -- nC
0µ
ID=100A
40
30
20
10
s
1m
DC
10
7
5
3
2
1.0
7
5
3
2
s
10
10
ms
0m
s
op
era
tio
Operation in
this area is
limited by RDS(on).
n
Tc=25°C
Single pulse
2
3
5
7 1.0
2
3
5
7 10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT12213
EAS -- Ta
120
50
10
µs
10
100
7
5
3
2
IT12212
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
PW≤10µs
IDP=400A
0.1
0.1
250
PD -- Tc
60
ASO
1000
7
5
3
2
VDS=20V
ID=100A
100
80
60
40
20
0
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT12214
0
25
50
75
100
125
150
Ambient Temperature, Ta -- °C
175
IT12215
Note on usage : Since the 2SK4164 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0736-4/4