2SK4164 Ordering number : ENA0736 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4164 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 45 Gate-to-Source Voltage VGSS ±20 V ID 100 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% Tc=25°C V 400 A 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 850 mJ Avalanche Current *2 IAV 70 A Note : *1 VDD=30V, L=200µH, IAV=70A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : K4164 Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=45V, VGS=0V VGS= ±16V, VDS=0V Ratings min typ Unit max 45 V µA ±10 µA Continued on next page. 1 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51607QA TI IM TC-00000690 No. A0736-1/4 2SK4164 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=50A 46 Unit max 2.6 V 77 S 2.5 3.3 mΩ RDS(on)2 Ciss ID=50A, VGS=10V ID=50A, VGS=4V 3.6 5.0 mΩ VDS=20V, f=1MHz 11500 pF Output Capacitance Coss VDS=20V, f=1MHz 1500 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 1200 pF Turn-ON Delay Time td(on) See specified Test Circuit. 70 ns Rise Time tr td(off) See specified Test Circuit. 1050 ns See specified Test Circuit. 710 ns tf See specified Test Circuit. 650 ns Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge Qg nC Qgs VDS=20V, VGS=10V, ID=100A VDS=20V, VGS=10V, ID=100A 220 Gate-to-Source Charge 34 nC Gate-to-Drain “Miller” Charge Qgd VDS=20V, VGS=10V, ID=100A 47 Diode Forward Voltage VSD IS=100A, VGS=0V 0.9 nC 1.2 V Package Dimensions unit : mm (typ) 7002-001 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54 5.08 1 : Gate 2 : Source 3 : Drain 6.2 5.2 7.8 2.5 10.0 6.0 SANYO : ZP Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=20V 10V 0V VIN VIN ≥50Ω VOUT D PW=10µs D.C.≤1% 2SK4164 G P.G L ID=50A RL=0.4Ω 10V 0V 50Ω S 50Ω VDD 2SK4164 No. A0736-2/4 2SK4164 4V 160 80 VGS=3V 60 60 40 20 20 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 7 6 5 4 Tc=75°C 25°C 2 --25°C 1 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 10 5 = Tc 10 -- °C 25 Source Current, IS -- A 2 °C 75 7 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 4V S= A, VG 0 5 I D= 10V S= 0A, VG 5 = ID 4 3 2 1 0 --25 50 100 125 150 IT12207 10 7 5 3 2 1.0 7 5 3 2 Tc=7 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT12209 Ciss, Coss, Crss -- VDS 3 f=1MHz 2 Ciss 2 Ciss, Coss, Crss -- pF td(off) 10000 1000 7 tf 5 3 2 tr 100 7 5 3 Coss Crss 2 1000 td(on) 7 7 5 0.1 75 IS -- VSD 0 VDD=20V VGS=10V 3 25 VGS=0V Single pulse 100 7 5 3 2 5 7 100 IT12208 SW Time -- ID 5 4.0 IT12205 5 0.1 7 5 3 2 0.01 2 1.0 0.1 3.5 6 3 2 °C 25 3.0 Case Temperature, Tc -- °C VDS=10V Single pulse 3 2.5 Single pulse IT12206 yfs -- ID 100 2.0 RDS(on) -- Tc 0 --50 0 2 1.5 7 ID=50A Single pulse 3 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 8 0.5 IT12204 5°C 25°C --25°C 0.1 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 40 0 Forward Transfer Admittance, yfs -- S 100 --25° C 100 120 25° C 120 140 Tc= 75° C Drain Current, ID -- A V 10 Drain Current, ID -- A 140 0 Switching Time, SW Time -- ns VDS=10V Single pulse 180 160 7 Tc= -25°C 75°C 6V 8V Tc=25°C Single pulse 180 ID -- VGS 200 25 ° C ID -- VDS 200 5 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT12210 0 5 10 15 25 20 Drain-to-Source Voltage, VDS -- V 30 IT12211 No. A0736-3/4 2SK4164 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 50 100 150 200 Total Gate Charge, Qg -- nC 0µ ID=100A 40 30 20 10 s 1m DC 10 7 5 3 2 1.0 7 5 3 2 s 10 10 ms 0m s op era tio Operation in this area is limited by RDS(on). n Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT12213 EAS -- Ta 120 50 10 µs 10 100 7 5 3 2 IT12212 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W PW≤10µs IDP=400A 0.1 0.1 250 PD -- Tc 60 ASO 1000 7 5 3 2 VDS=20V ID=100A 100 80 60 40 20 0 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12214 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT12215 Note on usage : Since the 2SK4164 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No. A0736-4/4